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| Si7459DP New Product Vishay Siliconix P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) - 30 FEATURES ID (A) - 22 rDS(on) (W) 0.0068 @ VGS = - 10 V D TrenchFETr Power MOSFETS D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile APPLICATIONS D Battery and Load Switching - Notebook Computers - Notebook Battery Packs S PowerPAK SO-8 6.15 mm S 1 2 3 S S 5.15 mm G 4 G D 8 7 6 5 D D D D Bottom View Ordering Information: Si7459DP-T1 - E3 P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C PD TJ, Tstg TA = 25_C ID TA = 70_C IDM IS - 4.5 5.4 3.4 - 55 to 150 - 17 - 60 - 1.6 1.9 1.2 W _C - 10 A Symbol VDS VGS 10 secs Steady State - 30 "25 Unit V - 22 - 13 THERMAL RESISTANCE RATINGS Parameter Maximum Junction to Ambienta Junction-to-Ambient Maximum Junction-to-Case (Drain) Notes a. Surface Mounted on 1" x 1" FR4 Board. Document Number: 72631 S-32678--Rev. A, 29-Dec-03 www.vishay.com t v 10 sec Steady State Steady State RthJA RthJC Symbol Typical 18 52 1.0 Maximum 23 65 1.5 Unit _C/W 1 Si7459DP Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = - 250 mA VDS = 0 V, VGS = "20 V Gate-Body Gate Body Leakage IGSS VDS = 0 V, VGS = "25 V VDS = - 30 V, VGS = 0 V Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Forward Resistancea IDSS ID(on) rDS(on) gfs VSD VDS = - 30 V, VGS = 0 V, TJ = 70_C VDS = - 5 V, VGS = - 10 V VGS = - 10 V, ID = - 22 A VDS = - 15 V, ID = - 22 A IS = - 2.9 A, VGS = 0 V - 30 0.0056 50 - 0.71 - 1.1 0.0068 - 1.0 - 3.0 "100 nA "200 -1 - 10 mA A W S V V Symbol Test Condition Min Typ Max Unit Transconductancea Voltagea Diode Forward Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Gate Resistance Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf Rg trr IF = - 2.9 A, di/dt = 100 A/ms VDD = - 15 V, RL = 15 W ID ^ - 1 A, VGEN = - 10 V, RG = 6 W VDS = - 15 V, VGS = - 10 V, ID = - 22 A 113 17 32.5 25 20 180 130 4 100 150 40 30 270 200 W ns ns 170 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 60 VGS = 10 thru 5 V 50 4V 50 60 Transfer Characteristics I D - Drain Current (A) 40 I D - Drain Current (A) 40 30 30 20 20 TC = 125_C 25_C - 55_C 10 3V 10 0 0 1 2 3 4 5 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Document Number: 72631 S-32678--Rev. A, 29-Dec-03 www.vishay.com 2 Si7459DP New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.010 10000 Vishay Siliconix Capacitance r DS(on) - On-Resistance ( W ) 0.008 VGS = 10 V C - Capacitance (pF) 8000 Ciss 0.006 6000 0.004 4000 0.002 2000 Crss Coss 0.000 0 10 20 30 40 50 0 0 6 12 18 24 30 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 10 V GS - Gate-to-Source Voltage (V) VDS = 15 V ID = 22 A 1.6 On-Resistance vs. Junction Temperature VGS = 10 V ID = 22 A 6 r DS(on) - On-Resistance (W) (Normalized) 40 60 80 100 120 8 1.4 1.2 4 1.0 2 0.8 0 0 20 0.6 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage 100 0.020 On-Resistance vs. Gate-to-Source Voltage 10 TJ = 150_C r DS(on) - On-Resistance ( W ) 0.016 I S - Source Current (A) 0.012 ID = 22 A 0.008 TJ = 25_C 1 0.004 0.1 0.00 0.2 0.4 0.6 0.8 1.0 1.2 VSD - Source-to-Drain Voltage (V) 0.000 0 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) Document Number: 72631 S-32678--Rev. A, 29-Dec-03 www.vishay.com 3 Si7459DP Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.6 200 Single Pulse Power 0.4 V GS(th) Variance (V) ID = 250 mA 0.2 Power (W) 160 120 0.0 80 - 0.2 40 - 0.4 - 50 - 25 0 25 50 75 100 125 150 0 0.001 0.01 0.1 Time (sec) 1 10 TJ - Temperature (_C) Safe Operating Area 100 Limited by rDS(on) 10 I D - Drain Current (A) 10 ms 100 ms 1s TC = 25_C Single Pulse 10 s dc 1 ms 1 0.1 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 0.05 t1 PDM 0.02 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 52_C/W t1 t2 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (sec) 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 www.vishay.com 4 Document Number: 72631 S-32678--Rev. A, 29-Dec-03 Si7459DP New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Vishay Siliconix Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 Single Pulse 0.05 0.02 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (sec) 1 10 Document Number: 72631 S-32678--Rev. A, 29-Dec-03 www.vishay.com 5 |
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