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| Silicon N Channel MOSFET Tetrode q q q BF 996 S For input stages in UHF TV tuners High transconductance Low noise figure Type BF 996 S Marking MH Ordering Code (tape and reel) Q62702-F1021 Pin Configuration 1 2 3 4 S D G2 G1 Package1) SOT-143 Maximum Ratings Parameter Drain-source voltage Drain current Gate 1/gate 2 peak source current Total power dissipation, TA < 76 C Storage temperature range Channel temperature Thermal Resistance Junction - soldering point Rth JS < 370 K/W Symbol VDS ID Values 20 30 10 200 150 Unit V mA mW IG1/2SM Ptot Tstg Tch - 55 ... + 150 C 1) For detailed information see chapter Package Outlines. Semiconductor Group 1 07.94 BF 996 S Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Symbol min. DC Characteristics Drain-source breakdown voltage ID = 10 A, - VG1S = - VG2S = 4 V Gate 1 source breakdown voltage IG1S = 10 mA, VG2S = VDS = 0 Gate 2 source breakdown voltage IG2S = 10 mA, VG1S = VDS = 0 Gate 1 source leakage current VG1S = 5 V, VG2S = VDS = 0 Gate 2 source leakage current VG2S = 5 V, VG1S = VDS = 0 Drain current VDS = 15 V, VG1S = 0, VG2S = 4 V Gate 1 source pinch-off voltage VDS = 15 V, VG2S = 4 V, ID = 20 A Gate 2 source pinch-off voltage VDS = 15 V, VG1S = 0, ID = 20 A V(BR) DS Values typ. max. Unit 20 8.5 8.5 - - 2 - - - - - - - - - - - 14 14 50 50 20 2.5 2.0 V V(BR) G1SS V(BR) G2SS IG1SS IG2SS nA IDSS - VG1S (p) - VG2S (p) mA V Semiconductor Group 2 BF 996 S Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Symbol min. AC Characteristics Forward transconductance VDS = 15 V, ID = 10 mA, VG2S = 4 V, f = 1 kHz Gate 1 input capacitance VDS = 15 V, ID = 10 mA, VG2S = 4 V, f = 1 MHz Gate 2 input capacitance VDS = 15 V, ID = 10 mA, VG2S = 4 V, f = 1 MHz Feedback capacitance VDS = 15 V, ID = 10 mA, VG2S = 4 V, f = 1 MHz Output capacitance VDS = 15 V, ID = 10 mA, VG2S = 4 V, f = 1 MHz Power gain VDS = 15 V, ID = 10 mA f = 200 MHz, GG = 2 mS, GL = 0.5 mS (test circuit 1) Power gain VDS = 15 V, ID = 10 mA f = 800 MHz, GG = 2.5 mS, GL = 0.8 mS (test circuit 2) Noise figure VDS = 15 V, ID = 10 mA f = 200 MHz, GG = 2 mS, GL = 0.5 mS (test circuit 1) Noise figure VDS = 15 V, ID = 10 mA f = 800 MHz, GG = 2.5 mS, GL = 0.8 mS (test circuit 2) Gain control range VDS = 15 V, VG2S = 4 ... - 2 V, f = 800 MHz (test circuit 2) gfs Cg1ss Cg2ss Cdg1 Cdss Gps 15 - - - - - 18 2.3 1.1 25 0.8 25 - - - - - - fF pF dB mS pF Values typ. max. Unit Gps - 18 - F - 1 - F - 1.8 - Gps 40 - - Semiconductor Group 3 BF 996 S Total power dissipation Ptot = f (TA) Output characteristics ID = f (VDS) VG2S = 4 V Gate 1 forward transconductance gfs1 = f (VG1S) VDS = 15 V, IDSS = 10 mA, f = 1 kHz Gate 1 forward transconductance gfs1 = f (VG2S) VDS = 15 V, IDSS = 10 mA, f = 1 kHz Semiconductor Group 4 BF 996 S Drain current ID = f (VG1S) VDS = 15 V Gate 1 input capacitance Cg1ss = f (VG1S) VG2S = 4 V, VDS = 15 V IDSS = 10 mA, f = 1 MHz Gate 2 input capacitance Cg2ss = f (VG2S) VG1S = 0 V, VDS = 15 V IDSS = 10 mA, f = 1 MHz Output capacitance Cdss = f (VDS) VG1S = 0 V, VG2S = 4 V IDSS = 10 mA, f = 1 MHz Semiconductor Group 5 BF 996 S Power gain Gps = f (VG2S) VDS = 15 V, VG1S = 0 V, IDSS = 10 mA f = 200 MHz (see test circuit 1) Noise figure F = f (VG2S) VDS = 15 V, VG1S = 0 V, IDSS = 10 mA f = 200 MHz (see test circuit 1) Power gain Gps = f (VG2S) VDS = 15 V, VG1S = 0 V, IDSS = 10 mA f = 800 MHz (see test circuit 2) Noise figure F = f (VG2S) VDS = 15 V, VG1S = 0 V, IDSS = 10 mA f = 800 MHz (see test circuit 2) Semiconductor Group 6 BF 996 S Gate 1 input admittance y11s VDS = 15 V, VG2S = 4 V (common source) Gate 1 forward transfer admittance y21s VDS = 15 V, VG2S = 4 V (common source) Output admittance y22s VDS = 15 V, VG2S = 4 V (common source) Semiconductor Group 7 BF 996 S Test circuit 1 for power gain and noise figure f = 200 MHz, GG = 2 mS, GL = 0.5 mS Test circuit 2 for power gain, noise figure and cross modulation f = 800 MHz, GG = 2.5 mS, GL = 0.8 mS Semiconductor Group 8 |
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