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| BFN 22 NPN High Voltage Transistors Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren fur die Oberflachenmontage Power dissipation - Verlustleistung Plastic case Kunststoffgehause Weight approx. - Gewicht ca. Plastic material has UL classification 94V-0 Gehausematerial UL94V-0 klassifiziert NPN 250 mW SOT-23 (TO-236) 0.01 g Dimensions / Mae in mm 1=B 2=E 3=C Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle Maximum ratings (TA = 25/C) Collector-Emitter-voltage Collector-Base-voltage Collector-Emitter-voltage Emitter-Base-voltage B open E open RBE = 2.7 kS C open VCE0 VCB0 VCER VEB0 Ptot IC ICM Tj TS Grenzwerte (TA = 25/C) BFN 22 250 V 250 V 250 V 5V 250 mW 1) 50 mA 100 mA 150/C - 65...+ 150/C Power dissipation - Verlustleistung Collector current - Kollektorstrom (dc) Peak Collector current - Kollektor-Spitzenstrom Junction temperature - Sperrschichttemperatur Storage temperature - Lagerungstemperatur Characteristics (Tj = 25/C) Min. Collector-Base cutoff current - Kollektorreststrom IE = 0, VCB = 200 V IE = 0, VCB = 200 V, Tj = 150/C Emitter-Base cutoff current - Emitterreststrom IC = 0, VEB = 5 V IC = 10 mA, IB = 1 mA IEB0 VCEsat - - ICB0 ICB0 - - Kennwerte (Tj = 25/C) Typ. - - - - Max. 100 nA 20 :A 100 nA 500 mV Collector saturation volt. - Kollektor-Sattigungsspg. 2) 1 ) Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschlu 2 ) Tested with pulses tp = 300 :s, duty cycle # 2% - Gemessen mit Impulsen tp = 300 :s, Schaltverhaltnis # 2% 6 01.11.2003 High Voltage Transistors Characteristics (Tj = 25/C) Min. Base saturation voltage - Basis-Sattigungsspannung 1) IC = 10 mA, IB = 1 mA VCE = 20 V, IC = 25 mA Gain-Bandwidth Product - Transitfrequenz VCE = 10 V, IC = 10 mA, f = 100 MHz VCB = 30 V, IE = ie = 0, f = 1 MHz Thermal resistance junction to ambient air Warmewiderstand Sperrschicht - umgebende Luft Recommended complementary PNP transistors Empfohlene komplementare PNP-Transistoren fT CCB0 - - RthA BFN 23 100 MHz 0.8 pF VBEsat hFE - 50 - - BFN 22 Kennwerte (Tj = 25/C) Typ. Max. 1V - - - 420 K/W 2) DC current gain - Kollektor-Basis-Stromverhaltnis 1) Collector-Base Capacitance - Kollektor-Basis-Kapazitat Marking - Stempelung BFN 22 = HB ) Tested with pulses tp = 300 :s, duty cycle # 2% - Gemessen mit Impulsen tp = 300 :s, Schaltverhaltnis # 2% ) Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschlu 01.11.2003 1 2 7 |
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