 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Preliminary data Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PD TJ TJM Tstg TL Md Weight 1.6 mm (0.063 in) from case for 10 s Mounting torque Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 MW Continuous Transient TC = 25C TC = 25C, pulse width limited by TJM TC = 25C TC = 25C IS IDM, di/dt 100 A/ms, VDD VDSS, TJ 150C, RG = 2 W TC = 25C 72N20 80N20 72N20 80N20 VDSS IXFK72N20 IXFK80N20 ID25 RDS(on) 200 V 72 A 35 mW 200 V 80 A 30 mW trr 200 ns Maximum Ratings 200 200 20 30 72 80 288 320 74 45 5 360 -55 ... +150 150 -55 ... +150 300 0.9/6 10 V V V V A A A A A mJ V/ns W C C C C Nm/lb.in. g TO-264 AA G D S (TAB) G = Gate S = Source D = Drain TAB = Drain Features * International standard packages * Molding epoxies meet UL 94 V-0 flammability classification * Low RDS (on) HDMOSTM process * Unclamped Inductive Switching (UIS) rated * Fast intrinsic rectifier Applications Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 200 2 4 100 TJ = 25C TJ = 125C 200 1 35 30 V V nA mA mA mW mW * * * * DC-DC converters Synchronous rectification Battery chargers Switched-mode and resonant-mode power supplies * DC choppers * Temperature and lighting controls VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 1 mA VDS = VGS, ID = 4 mA VGS = 20 VDC, VDS = 0 VDS = 0.8 * VDSS VGS = 0 V VGS = 10 V,ID = 0.5 * ID25 Advantages * Easy to mount * Space savings * High power density 72N20 80N20 Pulse test, t 300 ms, duty cycle d 2 % IXYS reserves the right to change limits, test conditions, and dimensions. 97523C (07/00) (c) 2000 IXYS All rights reserved 1-4 IXFK72N20 Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 35 42 5900 VGS = 0 V, VDS = 25 V, f = 1 MHz 1140 480 40 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 55 120 26 280 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 39 120 0.35 0.15 RG = (External), S pF pF pF ns ns ns ns nC nC nC K/W K/W Dim. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T IXFK80N20 TO-264 AA Outline gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK VDS = 10 V; ID = 0.5 * ID25, pulse test Millimeter Min. Max. 4.82 2.54 2.00 1.12 2.39 2.90 0.53 25.91 19.81 5.46 0.00 0.00 20.32 2.29 3.17 6.07 8.38 3.81 1.78 6.04 1.57 5.13 2.89 2.10 1.42 2.69 3.09 0.83 26.16 19.96 BSC 0.25 0.25 20.83 2.59 3.66 6.27 8.69 4.32 2.29 6.30 1.83 Inches Min. Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072 Source-Drain Diode Symbol IS ISM VSD t rr QRM IRM Test Conditions VGS= 0 V Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 72N20 80N20 72N20 80N20 72 80 288 320 1.5 A A A A V Repetitive; pulse width limited by TJM IF = IS, VGS = 0 V, Pulse test, t 300 ms, duty cycle d 2 % IF = IS, -di/dt = 100 A/ms, VR = 100 V 1.2 10 200 ns mC A (c) 2000 IXYS All rights reserved IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-4 IXFK72N20 IXFK80N20 200 TJ = 25OC 160 VGS = 10V 9V 8V 200 TJ = 125OC 160 VGS = 10V 9V 8V ID - Amperes 120 80 40 5V ID - Amperes 7V 120 7V 6V 80 40 6V 5V 0 0 4 8 12 16 20 0 0 4 8 12 16 20 VDS - Volts VDS - Volts O Figure 1. Output Characteristics at 25 C Figure 2. Output Characteristics at 125OC 2.4 3.2 VGS = 10V VGS = 10V RDS(ON) - Normalized RDS(ON) - Normalized 2.8 2.4 2.0 1.6 1.2 0.8 T j =250 C Tj = 1250 C 2.0 ID = 80A 1.6 ID = 40A 1.2 0 50 100 150 200 250 0.8 25 50 75 100 125 150 ID - Amperes TJ - Degrees C Figure 3. RDS(on) normalized to 0.5 ID25 value 100 80 IXFK80N20 IXFK72N20 Figure 4. RDS(on) normalized to 0.5 ID25 value 160 120 ID - Amperes 60 40 20 0 -50 ID - Amperes TJ = 25 C o TJ = 125oC 80 40 0 -25 0 25 50 75 100 125 150 2 4 6 8 10 TC - Degrees C VGS - Volts Figure 5. Drain Current vs. Case Temperature Figure 6. Admittance Curves (c) 2000 IXYS All rights reserved 3-4 IXFK72N20 12 10 VDS = 100 V ID = 40 A IG = 1 mA IXFK80N20 10000 Ciss Capacitance - pF VGS - Volts 8 6 4 2 0 f = 1MHz 1000 Coss Crss 100 0 50 100 150 200 250 300 350 0 5 10 15 20 25 30 35 40 Gate Charge - nC VDS - Volts Figure 7. Gate Charge 200 160 300 Figure 8. Capacitance Curves 1 00 ID - Amperes 120 TJ = 25OC ID - Amperes 80 TJ = 125OC 10 TC = 25OC 1 ms 10 ms 100 ms DC 40 0 0.4 0.8 1.2 1.6 2.0 1 1 10 1 00 200 VSD - Volts VDS - Volts Figure 9. Source Current vs. Source to Drain Voltage 0.40 0.35 0.30 Figure10. Forward Bias Safe Operating Area R(th)JC - K/W 0.25 0.20 0.15 0.10 0.05 0.00 10-3 10-2 10-1 100 101 Pulse Width - Seconds Figure 11. Transient Thermal Resistance (c) 2000 IXYS All rights reserved 4-4 |
Price & Availability of IXFK80N20
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |