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MITSUBISHI SEMICONDUCTOR
M63800FP
7-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
DESCRIPTION M63800FP is a seven-circuit output-sourcing Darlington transistor array. The circuits are made of PNP and NPN transistors. This semiconductor integrated circuit performs highcurrent driving with extremely low input-current supply. PIN CONFIGURATION
INPUT
16 O1 15 O2 14 O3 13 O4 OUTPUT 12 O5 11 O6 10 O7 9 GND
IN1 1 IN2 2 IN3 3 IN4 4 IN5 5 IN6 6 IN7 7 VS 8

FEATURES High breakdown voltage (BVCEO 50V) High-current driving (Io(max) = -500mA) With output clamping diodes Driving available with CMOS IC output of 6-16V or with TTL output Wide operating temperature range (Ta = -20 to +75C) Output current-sourcing type
Package type 16P2N-A
CIRCUIT DIAGRAM APPLICATION Drives of relays, printers, LEDs, fluorescent display tubes and lamps, and interfaces between MOS-bipolar logic systems and relays, solenoids, or small motors
VS 20K
INPUT
3K 7.2K 1.5K
3K OUTPUT
FUNCTION The M63800FP has seven circuits, which are made of input inverters and current-sourcing outputs. The outputs are made of PNP transistors and NPN Darlington transistors. The PNP transistor base current is constant. A spike-killer clamping diode is provided between each output pin and GND. VS (pin 8) and GND (pin 9) are used commonly among the eight circuits. The input has resistance of 3k, and a maximum of 10V can be applied. The output current is 500mA maximum. Supply voltage VS is 50V maximum. The M63800FP is enclosed in a molded small flat package, enabling space-saving design.
GND The seven circuits share the VS and GND. The diode, indicated with the dotted line, is parasitic, and cannot be used. Unit :
ABSOLUTE MAXIMUM RATINGS
Symbol VCEO VS VI IO IF VR Pd Topr Tstg
# #
(Unless otherwise noted, Ta = -20 ~ +75C)
Parameter Collector-emitter voltage Supply voltage Input voltage Output current Clamping diode forward current Clamping diode reverse voltage Power dissipation Operating temperature Storage temperature Output, L
Conditions
Ratings -0.5 ~ +50 50 -0.5 ~ +10 -500 -500 50
Unit V V V mA mA V W C C
Current per circuit output, H
Ta = 25C, when mounted on board
1.00 -20 ~ +75 -55 ~ +125
# : Unused I/O pins must be connected to GND. Aug. 1999
MITSUBISHI SEMICONDUCTOR
M63800FP
7-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
RECOMMENDED OPERATING CONDITIONS
Symbol VS Supply voltage Output current (Current per 1 circuit when 7 circuits are coming on simultaneously) "H" input voltage "L" input voltage Parameter
(Unless otherwise noted, Ta = -20 ~ +75C)
min 0
Limits typ -- -- -- 5 --
max 50 -350
Unit V
IO
Duty Cycle no more than 7% Duty Cycle no more than 40%
0 0 2.4 0
mA -100 10 0.2 V V
VIH VIL
ELECTRICAL CHARACTERISTICS
Symbol IS (leak) # VCE (sat) II IS VF IR
#
(Unless otherwise noted, Ta = -20 ~ +75C)
Parameter Supply leak current VS = 50V, VI = 0.2V
Test conditions
Limits min -- -- -- -- -- -- -- -- typ+ -- 1.6 1.45 0.6 2.9 5.6 -1.2 -- max 100 2.4 2.0 1.0 5.0 15.0 -2.4 100
Unit A V mA mA V A
VS = 10V, VI = 2.4V, IO = -350mA Collector-emitter saturation voltage VS = 10V, VI = 2.4V, IO = -100mA Input current Supply current VI = 3V VI = 10V VS = 50V, VI = 3V (all input)
Clamping diode forward voltage IF = -350mA Clamping diode reverse current VR = 50V
+ : The typical values are those measured under ambient temperature (Ta) of 25C. There is no guarantee that these values are obtained under any conditions. # : Unused I/O pins must be connected to GND.
SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25C)
Symbol ton toff Parameter Turn-on time Turn-off time CL = 15pF (note 1) Test conditions min -- -- Limits typ 100 4800 max -- -- Unit ns ns
NOTE 1 TEST CIRCUIT
INPUT VS Measured device
TIMING DIAGRAM
50% INPUT
50%
PG 50 RL CL
OUTPUT
50% OUTPUT ton toff
50%
(1) Pulse generator (PG) characteristics : PRR = 1kHz, tw = 10s, tr = 6ns, tf = 6ns, ZO = 50 VI = 0 to 2.4V (2) Input-output conditions : RL = 30, VS = 10V (3) Electrostatic capacity CL includes floating capacitance at connections and input capacitance at probes
Aug. 1999
MITSUBISHI SEMICONDUCTOR
M63800FP
7-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
TYPICAL CHARACTERISTICS
Output Saturation Voltage Output Current Characteristics -500
VS = 10V VI = 2.4V Ta = 75C Ta = 25C Ta = -20C
Thermal Derating Factor Characteristics 2.0
Power dissipation Pd (W)
1.5
Output current IO (mA) 0 25 50 75 100
-400
-300
1.0
-200
0.5
-100
0
0
0
0.5
1.0
1.5
2.0
2.5
Ambient temperature Ta (C)
Output saturation voltage VCE (sat) (V)
Duty-Cycle-Output Current Characteristics -500
Duty-Cycle-Output Current Characteristics -500
Output current IO (mA)
Output current IO (mA)
-400
-400
-300
*The output current values represent the current per circuit. *Repeated frequency 10Hz *The value in the circle represents the value of the simultaneously-operated circuit. *Ta = 25C
-300 -200
*The output current values represent the current per circuit. *Repeated frequency 10Hz *The value in the circle represents the value of the simultaneously-operated circuit.
-200
-100
80 100
-100

0
0
20
40
60
0
*Ta = 75C
0
20
40
60
80
100
Duty cycle (%)
Duty cycle (%)
Grounded Emitter Transfer Characteristics -500 Forward bias current IF (mA)
VS = 20V VS-VO = 4V Ta = 75C Ta = 25C Ta = -20C
Clamping Diode Characteristics 500
Output current IO (mA)
-400
400
Ta = 75C Ta = 25C Ta = -20C
-300
300
-200
200
-100
100
0
0
0.2
0.4
0.6
0.8
1.0
0
0
0.5
1.0
1.5
2.0
Input voltage VI (V)
Forward bias voltage VF (V)
Aug. 1999
MITSUBISHI SEMICONDUCTOR
M63800FP
7-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
Input Characteristics 1.0
VS = 20V Ta = 75C Ta = 25C Ta = -20C
Input Characteristics 5
0.8
4
Input current II (mA)
0.6
Input current II (mA)
VS = 20V Ta = 75C Ta = 25C Ta = -20C
3
0.4
2
0.2
1
0
0
1
2
3
4
5
0
0
2
4
6
8
10
Input voltage VI (V)
Input voltage VI (V)
Aug. 1999

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