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Advanced Technical Information
MIO 1200-33E10
IGBT Module
Single switch
Short Circuit SOA Capability Square RBSOA
C C' C C
IC80 = 1200 A = 3300 V VCES VCE(sat) typ. = 3.1 V
G E' E E E
IGBT Symbol VCES VGES IC80 ICM tSC TC = 80C tp = 1 ms; TC = 80C VCC = 2500 V; VCEM CHIP = < 3300 V; VGE < 15 V; TVJ < 125C Conditions VGE = 0 V Maximum Ratings 3300 20 1200 2400 10 V V A A s
Features * NPT IGBT - Low-loss - Smooth switching waveforms for good EMC * Industry standard package - High power density - AISiC base-plate for high power cycling capacity - AIN substrate for low thermal resistance Typical Applications * AC power converters for - industrial drives - windmills - traction * LASER pulse generator
Symbol
Conditions
Characteristic Values (TVJ = 25C, unless otherwise specified) min. typ. max. 3.1 3.8 6 8 V V V
VCE(sat) VGE(th) ICES IGES td(on) tr td(off) tf Eon Eoff Cies Coes Cres Qge RthJC
IC = 1200 A; VGE = 15 V; TVJ = 25C TVJ = 125C IC = 240 mA; VCE = VGE VCE = 3300 V; VGE = 0 V; TVJ = 125C VCE = 0 V; VGE = 20 V; TVJ = 125C Inductive load; TVJ = 125C; VGE = 15 V; VCC = 1800 V; IC = 1200 A; RG = 1.5 ; L = 100 nH
120 mA 500 nA 400 200 1070 440 1890 1950 187 11.6 2.2 12.1 ns ns ns ns mJ mJ nF nF nF C 0.0085 K/W
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VCE = 25 V; VGE = 0 V; f = 1 MHz IC = 1200 A; VCE = 1800 V; VGE = 15 V
Collector emitter saturation voltage is given at chip level IXYS reserves the right to change limits, test conditions and dimensions.
(c) 2004 IXYS All rights reserved
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Advanced Technical Information
MIO 1200-33E10
Diode Symbol IF80 IFSM Conditions TC = 80C VR = 0 V; TVJ = 125C; tp = 10 ms; half-sinewave Maximum Ratings 1200 11000 A A
Symbol VF IRM trr QRR Erec RthJC
Conditions IF = 1200 A; TVJ = 25C TVJ = 125C
Characteristic Values min. typ. max. 2.30 2.35 1350 1450 1280 1530 V V A ns C mJ 0.017 K/W
VCC = 1800 V; IC = 1200 A; VGE = 15 V; RG = 1.5 ; TVJ = 125C Inductive load; L = 100nH
Forward voltage is given at chip level
Module Symbol TJM TVJ Tstg VISOL Md Conditions max junction temperature Operating temperature Storage temperature 50 Hz Mounting torque Base-heatsink, M6 screws Main terminals, M8 screws Maximum Ratings +150 -40...+125 -40...+125 6000 4-6 8 - 10 C C C V~ Nm Nm
Symbol dA dS L Rterm-chip *) RthCH Weight
Conditions Clearance distance Surface creepage distance terminal to base terminal to terminal terminal to base terminal to terminal
Characteristic Values min. typ. max. 23 19 33 33 10 0.085 0.006 1500 mm mm mm mm nH m K/W g
Module stray inductance, C to E terminal Resistance terminal to chip per module; grease = 1 W/m*K
*) V = VCE(sat) + Rterm-chip * IC resp. V = VF + Rterm-chip * IF
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(c) 2004 IXYS All rights reserved
417
Advanced Technical Information
MIO 1200-33E10
2400 17 V 2000 15 V 13 V 1600 11 V
2400 17 V 2000 15 V 13 V 1600 11 V
IC [A]
IC [A]
1200
1200
800 9V 400
800 9V 400 Tvj = 125 C
0 0 1 2 VCE [V] 3 4 5
0 0 1 2 3 VF [V] 4 5 6 7
Fig. 1 Typical output characteristics, chip level
2400
Fig. 2 Typical output characteristics, chip level
2400 VCE = 20V
2000 25 C 1600 125 C IC [A] IC [A] 1200
2000
1600
1200
800
800 125C
400 VGE = 15 V 0 0 1 2 3 VCE [V] 4 5 6
400
25C
0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 VGE [V]
Fig. 3 Typical onstate characteristics, chip level
20 VCC = 1800
Fig. 4 Typical transfer characteristics, chip level
1000
Cies 15 VCC = 2500 VGE [V]
C [nF] 100
VGE = 0 V fOSC = 1 MHz VOSC = 50 mV
10
Coes
10
5
Cres IC = 1200 A Tvj = 25 C
0 0 1 2 3 4 567 Qg [C] 8 9 10 11 12
1 0 5 10 15 20 VCE [V] 25 30 35
Fig. 5 Typical gate charge characteristics (c) 2004 IXYS All rights reserved
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417
Fig. 6 Typical capacitances vs collector-emitter voltage
Advanced Technical Information
MIO 1200-33E10
6 V CC = 1800 V RG = 1.5 ohm V GE = 15 V Tvj = 125 C L = 100 nH
9 8 7
E on
5
VCC = 1800 V IC = 1200 A VGE = 15 V Tvj = 125 C L = 100 nH Eon
4
6 Eon, Eoff [J] 5 4 3 2 Eoff
Eon , E off [J]
3
E off
2
1
1
0 0 500 1000 IC [A] 1500 2000 2500
0 0 5 10 RG [ohm] 15 20
Fig. 7 Typical switching energies per pulse vs collector current
10 td(off)
Fig. 8 Typical switching energies per pulse vs gate resistor
10 VCC = 1800 V IC = 1200 A VGE = 15 V Tvj = 125 C L = 100 nH
td(off)
td(on), tr, td(off), tf [s]
tf td(on)
td(on), tr, td(off), tf [s]
1
td(on)
1
tr
0.1
tr VCC = 1800 V RG = 1.5 ohm VGE = 15 V Tvj = 125 C L = 100 nH
tf
0.01 0 500 1000 IC [A] 1500 2000 2500
0.1 0 5 10 RG [ohm] 15 20
Fig. 9 Typical switching times vs collector current
2.5 VCC 2500 V
Fig. 10 Typical switching times vs gate resistor
2400
2000
2
1600
25C 125C
1.5 ICpulse / IC
IF [A] 1200
1
800
0.5 IC, Chip IC, Module 0 0 500 1000 1500 2000 VCE [V] 2500 3000 3500
400
0 0 1 2 VF [V] 3 4
Fig. 11 Turn-off safe operating area (RBSOA)
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(c) 2004 IXYS All rights reserved
417
Fig. 12 Typical diode forward characteristics, chip level
Advanced Technical Information
MIO 1200-33E10
2000 1800 1600 E rec [mJ], I RM [A], Q RR [C] 1400 1200 1000 800 600 400 200 0 0 500 1000 1500 IF [A] 2000 2500 3000 VCC = 1800 V R G = 1.5 ohm VGE = 15 V Tvj = 125 C L = 100 nH IRM E rec Q RR
1800 1600 1400 Erec [mJ], IRM [A], QRR [C] 1200 1000 800 Erec 600 400 200 0 0 5 10 RG [ohm] 15 20 IRM VCC = 1800 V IC = 1200 A VGE = 15 V Tvj = 125 C L = 100 nH
QRR
Fig. 13 Typical reverse recovery characteristics vs forward current
Fig. 14 Typical reverse recovery characteristics vs gate resistor
0.1
Zth(j-c) Diode Zth(j-h) [K/W] IGBT, DIODE 0.01 Zth(j-c) IGBT
Zth JC(t) = Ri(1 - e -t/ i )
i =1
n
i
IGBT
1 5.50 193 11.2 189
2 1.53 31.2 3.73 24.5
3 0.621 8.0 1.30 2.69
4 0.646 1.48 0.42 2.36
Ri(K/kW) i(ms) Ri(K/kW) i(ms)
0.001
0.0001 0.001
0.01
0.1 t [s]
1
10
Fig. 15 Thermal impedance vs time
DIODE
(c) 2004 IXYS All rights reserved
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417
Advanced Technical Information
MIO 1200-33E10
Outline drawing
'
'
Note: all dimensions are shown in mm
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(c) 2004 IXYS All rights reserved
417

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