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| AO3405 P-Channel Enhancement Mode Field Effect Transistor General Description The AO3405 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AO3405 is Pb-free (meets ROHS & Sony 259 specifications). AO3405L is a Green Product ordering option. AO3405 and AO3405L are electrically identical. Features VDS (V) = -30V ID = -2.6 A (V GS = -10V) RDS(ON) < 130m (VGS = -10V) RDS(ON) < 180m (VGS = -4.5V) TO-236 (SOT-23) Top View G D S G D S Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A B Maximum -30 12 -2.6 -2.2 -30 1.4 1 -55 to 150 Units V V A TA=25C TA=70C TA=25C TA=70C ID IDM PD TJ, TSTG W C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Symbol t 10s Steady-State Steady-State RJA RJL Typ 65 85 43 Max 90 125 60 Units C/W C/W C/W Alpha & Omega Semiconductor, Ltd. AO3405 Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter Conditions ID=-250A, VGS=0V VDS=-24V, VGS=0V TJ=55C VDS=0V, VGS=12V VDS=VGS ID=-250A VGS=-4.5V, VDS=-5V VGS=-10V, ID=-2.6A RDS(ON) Static Drain-Source On-Resistance TJ=125C VGS=-4.5V, ID=-2A VDS=-5V, ID=-2.5A 7 137 11 -0.83 -1 -2.2 481 VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 54 34 12 1.25 VGS=-4.5V, VDS=-15V, ID=-2.5A 1.75 4.35 8.9 VGS=-10V, VDS=-15V, RL=6, RGEN=6 IF=-2.5A, dI/dt=100A/s 8.8 23 6.9 26 15.6 180 -1.3 -10 102 130 -1.8 Min -30 -1 -5 100 -2.3 Typ Max Units V A nA V A m m m S V A pF pF pF nC nC nC ns ns ns ns ns nC STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current gFS VSD IS Forward Transconductance Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd tD(on) tr tD(off) tf trr Qrr Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=-2.5A, dI/dt=100A/s 2 A: The value of R JA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve provides a single pulse rating. Rev3: August 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AO3405 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 20 -10V 15 -4.5V -ID (A) 6 10 -4V 5 -3.5V VGS=-3V 0 0 1 2 3 4 5 -VDS (Volts) Fig 1: On-Region Characteristics 200 Normalized On-Resistance 180 160 RDS(ON) (m) 140 120 100 80 60 40 0 1 2 3 4 5 6 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 400 350 300 RDS(ON) (m) 250 200 150 100 50 0 2 4 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 25C 125C -IS (A) ID=-2A 1.0E+01 1.0E+00 125C 1.0E-01 1.0E-02 1.0E-03 1.0E-04 1.0E-05 1.0E-06 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics 25C VGS=-10V VGS=-4.5V 1.6 VGS=-10V 1.4 VGS=-4.5V 1.2 ID=-2A 1 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 -VGS(Volts) Figure 2: Transfer Characteristics -ID(A) 4 125C 2 25C 10 VDS=-5V 8 0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature Alpha & Omega Semiconductor, Ltd. AO3405 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 4 -VGS (Volts) 3 2 1 0 0 1 2 3 4 5 -Qg (nC) Figure 7: Gate-Charge Characteristics VDS=-15V ID=-2.5A Capacitance (pF) 800 600 Ciss 400 200 Coss Crss 0 0 5 10 15 20 25 30 -VDS (Volts) Figure 8: Capacitance Characteristics 100.0 TJ(Max)=150C TA=25C 40 10s 100s 1ms 0.1s 10ms Power (W) 30 TJ(Max)=150C TA=25C -ID (Amps) RDS(ON) 10.0 limited 20 1.0 1s 10s DC 0.1 0.1 1 -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 10 0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 10 ZJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=90C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD Ton Single Pulse T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. |
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