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| 2SK2524-01MR FAP-II Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = 30V Guarantee Avalanche Proof N-channel MOS-FET 450V 1 9A 40W > Outline Drawing > Applications Switching Regulators UPS DC-DC converters General Purpose Power Amplifier > Maximum Ratings and Characteristics - Absolute Maximum Ratings (TC=25C), unless otherwise specified Item Drain-Source-Voltage Drain-Gate-Voltage(RGS=20K) Continous Drain Current Pulsed Drain Current Gate-Source-Voltage Max. Power Dissipation Operating and Storage Temperature Range Symbol V DS V DGR ID I D(puls) V GS PD T ch T stg Rating 450 450 9 36 30 40 150 -55 ~ +150 Unit V V A A V W C C > Equivalent Circuit - Electrical Characteristics (TC=25C), unless otherwise specified Item Drain-Source Breakdown-Voltage Gate Threshhold Voltage Zero Gate Voltage Drain Current Gate Source Leakage Current Drain Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On-Time ton (ton=td(on)+tr) Turn-Off-Time toff (ton=td(off)+tf) Avalanche Capability Continous Reverse Drain Current Reverse Recovery Time Reverse Recovery Charge Symbol V (BR)DSS V GS(th) I DSS I R g C C C t t t t I I t Q GSS DS(on) fs iss oss rss d(on) r d(off) f AV DR rr rr Test conditions ID=1mA VGS=0V ID=1mA VDS=VGS VDS=450V Tch=25C VGS=0V Tch=125C VGS=30V VDS=0V ID=4,5A VGS=10V ID=4,5A VDS=25V VDS=25V VGS=0V f=1MHz VCC=300V ID=9A VGS=10V RGS=10 L=100H Tch=25C TC=25C IF=IDR VGS=0V -dIF/dt=100A/s Tch=25C Min. 450 2,5 Typ. 3,0 Max. 3,5 500 1,0 100 1,0 1700 200 75 30 75 90 55 1,65 3,0 10 0,87 6,6 1150 130 50 20 50 60 35 1,1 550 3,9 9,0 Unit V V A mA nA S pF pF pF ns ns ns ns A A ns C - Thermal Characteristics Item Thermal Resistance Symbol R th(ch-a) R th(ch-c) Test conditions channel to air channel to case Min. Typ. Max. 62,5 3,125 Unit C/W C/W N-channel MOS-FET 450V 1 2SK2524-01MR FAP-II Series Drain-Source On-State Resistance RDS(on) = f(Tch); ID=4,5A; VGS=10V 9A 40W > Characteristics Typical Output Characteristics ID=f(VDS); 80s pulse test; TC=25C Typical Transfer Characteristics ID=f(VGS); 80s pulse test; VDS=25V; Tch=25C ID [A] 1 RDS(ON) [] 2 ID [A] 3 VDS [V] Tch [C] VGS [V] Typical Drain-Source On-State-Resistance RDS(on)=f(ID); TC=25C Typical Forward Transconductance gfs=f(ID); 80s pulse test; VDS=25V; Tch=25C Gate Threshold Voltage VGS(th)=f(Tch); ID=1mA; VDS=VGS RDS(ON) [] gfs [S] 5 VGS(th) [V] 4 6 ID [A] ID [A] Tch [C] Typical Capacitances C=f(VDS); VGS=0V; f=1MHz Typical Gate Charge Characteristics VGS=f(Qg); ID=9A; Tc=25C Forward Characteristics of Reverse Diode IF=f(VSD); 80s pulse test; VGS=0V C [nF] VDS [V] VGS [V] IF [A] 7 8 9 VDS [V] Qg [nC] VSD [V] Power Dissipation PD=f(Tc) Safe Operation Area ID=f(VDS): D=0,01, Tc=25C Zth(ch-c) [K/W] Transient Thermal impedance Zthch-c=f(t) parameter:D=t/T PD[W] 10 ID [A] 12 Tch [C] VDS [V] t [s] Collmer Semiconductor - P.O. Box 702708 - Dallas TX - 75370 - 972.233.1589 - 972.233.0481 Fax - www.collmer.com - 11/98 This datasheet has been download from: www..com Datasheets for electronics components. |
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