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| CMPT918 NPN SILICON RF TRANSISTOR Central DESCRIPTION: TM Semiconductor Corp. The CENTRAL SEMICONDUCTOR CMPT918 type is an NPN silicon RF transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high frequency (VHF/UHF) amplifier and oscillator applications. Marking code is C3B. SOT-23 CASE MAXIMUM RATINGS (TA=25oC) SYMBOL VCBO VCEO VEBO IC PD TJ,Tstg JA UNITS V V V mA mW oC oC/W Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance 30 15 3.0 50 350 -65 to +150 357 ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted) SYMBOL ICBO BVCBO BVCEO BVEBO VCE(SAT) VBE(SAT) hFE fT Cob Cob Cib Pout Gpe NF TEST CONDITIONS MIN VCB=15V IC=1.0A 30 IC=3.0mA 15 IE=10A 3.0 IC=10mA, IB=1.0mA IC=10mA, IB=1.0mA VCE=1.0V, IC=3.0mA 20 VCE=10V, IC=4.0mA, f=100MHz 600 VCB=0V, IE=0, f=1.0MHz VCB=10V, IE=0, f=1.0MHz VEB=0.5V, IC=0, f=1.0MHz VCB=15V, IC=8.0mA, f=500MHz 30 VCB=12V, IC=6.0mA, f=200MHz 11 VCE=6.0V, IC=1.0mA, RS=50, f=60MHz MAX 10 UNITS nA V V V V V MHz pF pF pF mW dB dB 0.4 1.0 3.0 1.7 2.0 6.0 154 All dimensions in inches (mm). LEAD CODE: 1) BASE 2) EMITTER 3) COLLECTOR R2 155 |
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