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PD-93816D
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2)
Product Summary
Part Number IRHNA57264SE Radiation Level 100K Rads (Si) RDS(on) 0.06
IRHNA57264SE JANSR2N7474U2 250V, N-CHANNEL
REF: MIL-PRF-19500/684
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TECHNOLOGY
ID QPL Part Number 45A JANSR2N7474U2
International Rectifier's R5 TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.
SMD-2
Features:
n n n n n n n n n
Single Event Effect (SEE) Hardened Ultra Low RDS(on) Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Ceramic Package Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25C ID@ V GS = 12V, TC = 100C IDM PD @ TC = 25C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current A Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy A Avalanche Current A Repetitive Avalanche Energy A Peak Diode Recovery dv/dt A Operating Junction Storage Temperature Range Pckg. Mounting Surface Temp. Weight For footnotes refer to the last page 45 28 180 250 2.0 20 222 45 250 5.0 -55 to 150 300 (for 5s) 3.3 (Typical)
Pre-Irradiation
Units A
W
W/C
V mJ A mJ V/ns
o
C
g
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1
04/25/06
IRHNA57264SE, JANSR2N7474U2
Pre-Irradiation
Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified)
Parameter
BVDSS Drain-to-Source Breakdown Voltage BVDSS/TJ Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage g fs Forward Transconductance IDSS Zero Gate Voltage Drain Current
Min
250 -- -- 2.5 27 -- -- -- -- -- -- -- -- -- -- -- --
Typ Max Units
-- 0.28 -- -- -- -- -- -- -- -- -- -- -- -- -- -- 4.0 -- -- 0.06 4.5 -- 10 25 100 -100 165 45 75 35 125 80 65 -- V V/C V S( ) A
Test Conditions
VGS = 0V, ID = 1.0mA Reference to 25C, ID = 1.0mA VGS = 12V, ID = 28A A VDS = VGS, ID = 1.0mA VDS 15V, IDS = 28A A VDS = 200V ,VGS=0V VDS = 200V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VGS =12V, ID = 45A VDS = 125V VDD = 125V, ID = 45A, VGS =12V, RG = 2.35
IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance
nA nC
ns
nH
Measured from the center of drain pad to center of source pad VGS = 0V, VDS = 25V f = 1.0MHz
Ciss C oss C rss
Input Capacitance Output Capacitance Reverse Transfer Capacitance
-- -- --
5045 781 70
-- -- --
pF
Source-Drain Diode Ratings and Characteristics
Parameter
IS ISM VSD trr Q RR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) A Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min Typ Max Units
-- -- -- -- -- -- -- -- -- -- 45 180 1.2 560 8.6
Test Conditions
A
V nS C Tj = 25C, IS = 45A, VGS = 0V A Tj = 25C, IF = 45A, di/dt 100A/s VDD 50V A
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC RthJ-PCB Junction-to-Case Junction-to-PC board
Min Typ Max
-- -- -- 1.6 0.5 --
Units
C/W
Test Conditions
soldered to a 2 square copper-clad board
Note: Corresponding Spice and Saber models are available on International Rectifier web site. For footnotes refer to the last page
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Radiation Characteristics Pre-Irradiation
IRHNA57264SE, JANSR2N7474U2
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25C, Post Total Dose Irradiation AA
Parameter
BVDSS V GS(th) IGSS IGSS IDSS RDS(on) RDS(on) VSD Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source On-State Resistance (TO-3) Static Drain-to-Source On-State Resistance (SMD-2) Diode Forward Voltage
Min
250 2.0 -- -- -- -- -- --
100K Rads (Si)
Max
-- 4.5 100 -100 10 0.061 0.060 1.2
Units
V nA A V
Test Conditions
VGS = 0V, ID = 1.0mA V GS = VDS , ID = 1.0mA VGS = 20V VGS = -20V VDS= 200V, VGS=0V VGS = 12V, ID = 31A VGS = 12V, ID = 31A VGS = 0V, ID = 45A
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion Br I Au LET (MeV/(mg/cm2)) 36.7 59.8 82.3 Energy (MeV) 309 341 350 VDS (V) Range (m) @VGS=0V @VGS=-5V @VGS=-10V @VGS=-15V @VGS=-20V 39.5 250 250 250 250 250 32.5 250 250 250 250 240 28.4 250 250 225 175 50
300 250 200 VDS 150 100 50 0 0 -5 -10 VGS -15 -20 Br I Au
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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IRHNA57264SE, JANSR2N7474U2
Pre-Irradiation
1000
1000
I D, Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
100
VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V TOP
100
VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V TOP
10
10
5.0V
1
5.0V
20s PULSE WIDTH TJ = 25 C
1 10 100
1
0.1 0.1
VDS , Drain-to-Source Voltage (V)
0.1 0.1
20s PULSE WIDTH TJ = 150 C
1 10 100
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
2.5
I D , Drain-to-Source Current (A)
TJ = 25 C
RDS(on) , Drain-to-Source On Resistance (Normalized)
49A 45A ID = 44.5A
2.0
100
TJ = 150 C
1.5
1.0
10
0.5
1
V DS = 15 50V 20s PULSE WIDTH 5 6 7 8 9 10 11
0.0 -60 -40 -20
VGS = 12V
0 20 40 60 80 100 120 140 160
VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature ( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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Pre-Irradiation
IRHNA57264SE, JANSR2N7474U2
10000
8000
VGS , Gate-to-Source Voltage (V)
VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd
20
45A ID = 44.5A 49A
VDS = 200V VDS = 125V VDS = 50V
C, Capacitance (pF)
15
6000
Ciss
10
4000
Coss
2000
5
Crss
0 1 10 100
0
FOR TEST CIRCUIT SEE FIGURE 13
0 40 80 120 160 200
VDS , Drain-to-Source Voltage (V)
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
1000
1000
ISD , Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED BY R DS(on)
100
TJ = 150 C
10
ID, Drain-to-Source Current (A)
100
10 100s 1 Tc = 25C Tj = 150C Single Pulse 1 10 100 1ms 10ms
TJ = 25 C
1
0.1 0.4
V GS = 0 V
0.6 0.8 1.0 1.2 1.4
0.1
VSD ,Source-to-Drain Voltage (V)
1000
VDS , Drain-toSource Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
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5
IRHNA57264SE, JANSR2N7474U2
Pre-Irradiation
50
VDS VGS RG VGS
Pulse Width 1 s Duty Factor 0.1 %
RD
40
D.U.T.
+
ID , Drain Current (A)
-V DD
30
20
Fig 10a. Switching Time Test Circuit
10
VDS 90%
0
25
50
TC , Case Temperature ( C)
75
100
125
150
Fig 9. Maximum Drain Current Vs. Case Temperature
10% VGS
td(on) tr t d(off) tf
Fig 10b. Switching Time Waveforms
1
Thermal Response (Z thJC )
D = 0.50 0.20 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) PDM t1 t2 Notes: 1. Duty factor D = t1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1
0.1
0.01
0.001 0.00001
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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Pre-Irradiation
IRHNA57264SE, JANSR2N7474U2
EAS , Single Pulse Avalanche Energy (mJ)
400
15V
300
ID 20A 28.5A BOTTOM 45A TOP
VDS
L
DRIVER
RG
D.U.T.
IAS tp
+ - VDD
200
VGS 20V
A
0.01
100
Fig 12a. Unclamped Inductive Test Circuit
0
25
50
75
100
125
150
V(BR)DSS tp
StartingJT , Junction Temperature ( C)
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
I AS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
50K
QG
12V
.2F .3F
12 V
QGS
QGD
VGS
3mA
D.U.T.
+ V - DS
VG
Charge
IG
ID
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
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IRHNA57264SE, JANSR2N7474U2
Pre-Irradiation
Footnotes:
A Repetitive Rating; Pulse width limited by
maximum junction temperature. A VDD = 50V, starting TJ = 25C, L= 0.22mH Peak IL = 45A, VGS = 12V A ISD 45A, di/dt 274A/s, VDD 250V, TJ 150C
A Pulse width 300 s; Duty Cycle 2% A Total Dose Irradiation with VGS Bias.
12 volt VGS applied and V DS = 0 during irradiation per MIL-STD-750, method 1019, condition A. A Total Dose Irradiation with VDS Bias. 200 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A.
Case Outline and Dimensions -- SMD-2
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 04/2006
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