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| MITSUBISHI LASER DIODES ML7xx16 SERIES 2.5Gbps InGaAsP DFB LASER DIODE TYPE NAME ML725B16F/ML720J16S/ML725J16F FEATURES /4 phase shifted grating structure Wide temperature range operation (-20C to 85C ) High side-mode-suppression-ratio (typical 45dB) High resonance frequency (typical 11GHz) DESCRIPTION ML7xx16 series are uncooled DFB (Distributed Feedback) laser diodes for 2.5Gbps transmission emitting light beam at 1310nm. /4 shifted grating structure is employed to obtain excellent SMSR performance under 2.5Gbps modulation. Furthermore, ML7xx16 can operate in the wide temperature range form -20C to 85C without any temperature control. APPLICATION ABSOLUTE MAXIMUM RATINGS Symbol Po IF VRL IRD VRD Tc Tstg Parameter Output power Laser forward current Laser reverse voltage PD forward current PD reverse voltage Operation temperature Storage temperature 2.5Gbps transmission Conditions CW Ratings 6 200 2 2 20 -20 ~+85 -40 ~+100 Unit mW mA V mA V C C ELECTRICAL/OPTICAL CHARACTERISTICS (Tc=25C) Symbol Ith Iop Vop p SMSR // fr tr,tf Im Id Ct Parameter Threshold current Operation current Operating voltage Slope efficiency Peak wavelength Side mode suppression ratio Beam divergence angle (parallel) Resonance frequency Rise and fall time(10%-90%) Monitoring current (PD) Dark current (PD) Capacitance (PD) CW CW,Tc=85C CW,Po=5mW CW,Po=5mW,Tc=85C CW,Po=5mW CW,Po=5mW CW,Po=5mW,Tc=-20C~+85C CW,Po=5mW,Tc=-20C~+85C CW,Po=5mW Conditions Limits Min. 0.18 1290 35 0.1 MITSUBISHI ELECTRIC Typ. 10 35 30 75 1.1 0.25 1310 45 25 30 11 100 10 Max. 15 50 40 100 1.8 1330 40 47 150 2.0 0.1 20 Unit mA mA mA mA V mW/mA nm dB deg. deg. GHz psec mA A pF (perpendicular) CW,Po=5mW 2.48832Gbps, Ibias=Ith,Ipp=40mA 2.48832Gbps, Ibias=Ith,Ipp=40mA not including package CW,Po=5mW,VRD=1V VRD=5V VRD=5V,f=1MHz Jan. 2002 MITSUBISHI LASER DIODES ML7xx16 SERIES 2.5Gbps InGaAsP DFB LASER DIODE OUTLINE DRAWINGS ML725B16F 5.6 +0 -0.03 4.25 3.550.1 (Dimension:mm) (0.25) (3) 2-90 (4) (2) (0.25) (3) Case (1) (4) 10.1 0.250.03 (Glass) 2.0Min. 1.0Min. 1.27 0.03 Emitting Facet Reference Plane PD LD 0.1 2.10.15 1.2 (2) ML725B16F (1) 18 1 2.00.25 (P.C.D.) (1) (2) 4- 0.450.05 5.6 +0 -0.03 (Dimension:mm) ML720J16S 2-90 4.25 3.550.1 (0.25) (3) (2) (1) (4) (2) (0.25) (3) Case 10.1 0.250.03 (Glass) 2.0Min. 1.0Min. 1.27 0.03 Emitting Facet Reference Plane PD LD 0.1 2.10.15 1.2 (4) (1) ML720J16S 2.00.25 (P.C.D.) (1) (2) 4- 0.450.05 18 1 ML725J16F Top View 5.6 +0 -0.03 4.3 (Dimension:mm) (0.25) (3) 2-90 (4) (2) (0.25) (3) Case (1) (4) 10.1 3.750.1 PD LD 3.97 0.15 (7.51) 1.27 0.03 Emitting Facet Reference Plane (2) ML725J16F (1) 18 1 1.2 0.1 2.00.25 (P.C.D.) 4- 0.450.05 (1) (2) MITSUBISHI LASER DIODES ML7xx16 SERIES 2.5Gbps InGaAsP DFB LASER DIODE TYPICAL CHARACTERISTICS 10 Light output Po (mW) 8 6 4 2 0 0 20 40 60 80 100 Forward current If (mA) Fig. 1 Light output v.s. forward current -20C 25C 50C 85C -30 Light output Po (mW) Po=5mW -40 -50 -60 -70 -80 -90 1290 -20C 25C 50C 85C 1300 1310 1320 1330 Forward current If (mA) Fig. 2 Spectrum 1.2 Relative light output 1.0 0.8 0.6 0.4 0.2 0.0 -60 Fig. 3 Far field pattern Po=5mW Tc=25C // -40 -20 0 Angle () 20 40 60 |
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