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| NJM2670 DUAL H BRIDGE DRIVER s GENERAL DESCRIPTION The NJM2670 is a general-purpose 60V dual H-bridge drive IC. It consists of a pair of H-bridges, a thermal shut down circuit and its alarm output. The alarm output can detect application problems and the system reliability will be significantly improved if monitored by Micro Processor. Therefore, it is suitable for two-phase stepper motor application driven by microprocessor. s PACKAGE OUTLINE NJM2670D2 NJM2670E3 s FEATURES * Wide Voltage Range * Wide Range of Current Control * Thermal overload Protection * Package Outline (4V to 60V) (5 to 1500mA ) (DIP-22, EMP-24) s PIN CONNECTION SENSE A INA1 ENABLE A OUTA1 GND GND INB1 ENABLE B NC OUTB2 SENSE B DIP-22 VS A VCC INA2 OUTA2 GND GND INB2 TSD ARM NC OUTB2 VS B SENSE A INA1 ENABLE A NC OUTA GND GND INB1 ENABLE B NC OUTB2 SENSE B EMP-24 VS A VCC INA2 NC OUTA2 GND GND INB2 TSD ARM NC OUTB2 VS B -1- NJM2670 s BLOCK DIAGRAM VS A INA1 INA2 OUTA1 OUTA2 SENSE A ENABLE A VCC VS B INB1 INB2 OUTB1 OUTB2 Thermal Shut Down TSD_ARM SENSE B ENABLE B GND -2- NJM2670 s ABSOLUTE MAXIMUM RATINGS (Ta=25C ) PARAMETER SYMBOL Maximum Supply Voltage VMM Logic Supply Voltage VCC Input Voltage Range VIN Output Current IOUT PD25 Power Dissipation@T(GND)=25C PD125 Power Dissipation@T(GND)=125C Operating Junction Temperature Topr Storage Temperature Tstg RATINGS 60 7 -0.3 to 7 1.5 5 2 -40 85 -55 150 UNIT V V V A W W C C s RECOMENNDO OPERATING CONDITIONS PARAMETER SYMBOL Supply Voltage Logic Voltage Range Maximum Output Current Total Power Dissipation VMM VCC IOUT PD PD TEST CONDITIONS MIN. 4 4.75 - TYP. 5.00 - MAX. 55 5.25 1.3 5 2.2 UNIT V V A W W TGND=25C TGND=125C s THERMAL CHARACTERISTICS PARAMETER SYMBOL Thermal resistance Rthj-GND Rthj-A Rthj-GND Rthj-A TEST CONDITIONS MIN. - TYP. MAX. - UNIT C/W C/W C/W C/W DIP22 package. DIP22 package. Note EMP24 package. EMP24 package. Note 11 40 13 42 Note : All ground pins soldered onto a 20 cm2 PCB copper area with free air convection, TA=+25C -3- NJM2670 s ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL GENERAL Icc Quiescent current Thermal shutdown Off-State leak current Thermal alarm output saturation Dead time protection LOGIC Input LOW voltage Input HIGH voltage Input HIGH current Input LOW current OUTPUT Upper transistor saturation Ttsd Itsd-LEAK Vtsd Td ViL ViH IiH IiL VOU1 VOU2 VOL1 VOL2 VfU1 VfU2 VfL1 VfL2 Lo-LEAK TrrU TrrL TEST CONDITIONS MIN. TYP. MAX. 50 0.7 UNIT Enable=H,IN1=IN3=L,IN 2=IN4=H TSD ARM=5V Io=5mA 40 170 0.5 1 - mA C A V s V V A mA V V V V V V V V mA ns ns Vi=2.4V Vi=0.4V Io=1000mA Io=1300mA Io=1000mA Io=1300mA Io=1000mA Io=1300mA Io=1000mA Io=1300mA VMM=50V 2 -0.4 - 0.6 20 1.5 1.8 0.8 1.3 1.6 1.9 1.6 1.9 Lower transistor saturation Upper diode forward Lower diode forward Output leakage current Upper diode recoverly time Lower diode recoverly time 1.3 1.5 0.5 0.8 1.3 1.6 1.3 1.6 250 250 1 - -4- NJM2670 s TYPICAL APPLICATION 1). Bipolar Stepping Motor VS A INA1 INA2 OUTA1 Motor OUTA2 SENSE A VMM (4 55V) CPU or Microprocessor ENABLE A VCC VS B INB1 INB2 OUTB1 OUTB2 SENSE B GND ENABLE B VCC TSD TSD ARM (VMMGND) 2). Single Phase DC Motor VMM (4 55V) VS A INA1 INA2 OUTA1 Motor OUTA2 SENSE A ENABLE A CPU or Microprocessor VCC VS B INB1 INB2 VCC TSD TSD ARM OUTB1 Motor OUTB2 SENSE B GND ENABLE B (VMMGND) -5- NJM2670 s TYPICAL APPLICATION 1 IC C vs. VCC 200 Ta= 25degC Io=500mA VS=48V EN 1=E N2=H 1 VS=48V R L=N otin g EN1=EN2=H INA2=L INB1=INB2=L VIN(INA1)-h ysteresis vs. Tem perature 0.8 150 VIN(INA1)-hysteresis [V ] ICC [mA] 0.6 100 0.4 50 0.2 0 0 1 2 3 VC C [V] 4 5 6 7 0 -50 0 50 Temperature [degC ] 100 150 VIN(INA1) vs. Tem perature 0.8 2.4 VS=48V RL=Nothing EN 1=E N2=H INA 2=L INB 1=INB 2=L INA1=L to H VIN(IN A1)-IB [V ] 2 VIN(INA1) [V] 0.4 VIN(IN A1)-IB vs. Tem p erature VS=48V RL=Nothing EN 1=E N2=H INA 2=L INB 1=INB 2=L 2.2 0.6 1.8 INA1= 0.4V 1.6 0.2 INA1= 2.4V 1.4 IN A1=H to L 0 1.2 1 -50 0 50 Temperature [degC] 100 150 -0.2 -50 0 50 Temperature [degC] 100 150 N JM 2670 V sat(D ) vs. Io 3 O U TA1 O U TA2 O U TB1 O U TB2 N JM 2670 V sat(U ) vs. Io 2 V C C=5V V S=48V T a=25degC O U T A1 O U T A2 O U T B1 O U T B2 (Lot-N o.U 2009T ,D IP 16) (L ot-N o.U 2009T ,D IP 16) V C C=5 V V S =48V T a=25degC 2.5 1.8 1.6 2 V sat(D) [V ] V sat(U) [V ] 1.4 1.5 1.2 1 1 0.5 0.8 0 0 0.5 1 Io [A ] 1 .5 2 0.6 0 0 .5 1 Io [A ] 1.5 2 -6- NJM2670 s TYPICAL APPLICATION 2 NJM2670 Diode(D) vs. Io 1.8 OUTA1 OUTA2 OUTB1 OUTB2 NJM2670 Diode(U) vs. Io 1.8 VCC=5V VS=48V Ta=25degC OUTA1 OUTA2 OUTB1 OUTB2 (Lot-No.U2009T,DIP16) VCC=5V VS=48V Ta=25degC 1.6 1.6 Diode(D) [V ] Diode(U) [V] 1.4 1.4 1.2 1.2 1 1 0.8 0.8 0.6 0 0.5 1 Io [A] 1.5 2 0.6 0 0.5 1 Io [A] 1.5 2 ICC vs. Temperature 60 VCC=5V VS=48V RL=Nothing IN1=IN2=H IN3=IN4=L EN=H ICC vs. Temperature 80 VCC=5V VS=48V RL=Nothing 55 70 50 60 ICC [mA] IN1=IN2=H IN3=IN4=H EN=H ICC [mA] 45 50 40 40 35 EN=L 30 30 25 20 IN1=IN2=L IN3=IN4=L EN=H 20 -50 -25 0 25 50 75 100 125 150 10 -50 -25 0 25 50 75 100 125 150 Temperature [degC] Temperature [degC] NJM2670 Vsat(D) vs. Temperature 1.2 OUTA1 OUTA2 OUTB1 OUTB2 NJM2670 Vsat(U) vs. Temperature Io=1.0A VCC=5V VS=48V 1.4 OUTA1 OUTA2 OUTB1 OUTB2 (Lot-No.U2009T,DIP16) (Lot-No.U2009T,DIP16) Io=1.0A VCC=5V VS=48V 1 1.35 V sat(D) [V ] 0.8 Vsat(U) [V] 1.3 0.6 1.25 0.4 0.2 -50 -25 0 25 50 75 100 125 150 1.2 -50 -25 0 25 50 75 100 125 150 Temperature [degC] Temperature [degC] -7- NJM2670 s TYPICAL APPLICATION 3 1.6 OUTA1 OUTA2 OUTB1 OUTB2 NJM2670 Vsat(D) vs. Temperature (Lot-No.U2009T,DIP16) NJM2670 Vsat(U) vs. Temperature Io=1.3A VCC=5V VS=48V 1.8 OUTA1 OUTA2 OUTB1 OUTB2 (Lot-No.U2009T,DIP16) Io=1.3A VCC=5V VS=48V 1.4 1.7 1 Vsat(U) [V] Vsat(D ) [V ] 1.2 1.6 1.5 0.8 1.4 0.6 1.3 0.4 -50 -25 0 25 50 75 100 125 150 1.2 -50 -25 0 25 50 75 100 125 150 Temperature [degC] Temperature [degC] NJM2670 Diode(D) vs. Temperature 1.6 (Lot-No.U2009T,DIP16) VCC=5V VS=48V 1.5 I=1.3A Diode(D) [V ] Diode(U) [V ] 1.4 1.4 I=1.3A 1.5 1.6 NJM2670 Diode(U) vs. Temperature (Lot-No.U2009T,DIP16) VCC=5V VS=48V 1.3 I=1.0A 1.3 I=1.0A 1.2 1.2 1.1 1.1 1 -50 -25 0 25 50 75 100 125 150 1 -50 -25 0 25 50 75 100 125 150 Temperature [degC] Temperature [degC] NJM2670 Diode(U) vs. Temperature 1.2 (Lot-No.U2009T,DIP16) VCC=5V VS=48V 1.15 1.1 Diode(U) [V ] I=0.5A 1.05 1 0.95 0.9 0.85 0.8 -50 -25 0 25 50 75 100 125 150 Temperature [degC] [CAUTION] The specifications on this databook are only given for information , without any guarantee as regards either mistakes or omissions. The application circuits in this databook are described only to show representative usages of the product and not intended for the guarantee or permission of any right including the industrial rights. -8- |
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