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| Semiconductor RFL1N18, RFL1N20 1A, 180V and 200V, 3.65 Ohm, N-Channel Power MOSFETs Description These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA09289. January 1998 Features * 1A, 180V and 200V * rDS(ON) = 3.65 * SOA is Power Dissipation Limited * Nanosecond Switching Speeds * Linear Transfer Characteristics * High Input Impedance * Majority Carrier Device * Related Literature - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards" Symbol D Ordering Information G PART NUMBER RFL1N18 RFL1N20 PACKAGE TO-205AF TO-205AF BRAND RFL1N18 RFL1N20 S NOTE: When ordering, use the entire part number. Packaging JEDEC TO-205AF DRAIN (CASE) GATE SOURCE CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures. Copyright (c) Harris Corporation 1997 File Number 1442.2 5-1 RFL1N18, RFL1N20 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified RFL1N18 180 180 1 5 20 8.33 0.0667 -55 to 150 300 260 RFL1N20 200 200 1 5 20 8.33 0.0667 -55 to 150 300 260 UNITS V V A A V W W/oC oC oC oC Drain to Source Breakdown Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . VDS Drain to Gate Voltage (RGS = 1M) (Note 1). . . . . . . . . . . . . . . . . . . . . VDGR Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . TJ , TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . Tpkg CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 125oC. Electrical Specifications PARAMETER TC = 25oC, Unless Otherwise Specified SYMBOL BVDSS TEST CONDITIONS ID = 250A, VGS = 0V 180 200 VGS(TH) IDSS VGS = VDS, ID = 250A, (Figure 8) VDS = 0.8 x Rated BVDSS TC = 25oC TC = 125oC 2 400 VGS = 0V, VDS = 25V, f = 1MHz, (Figure 9) 15 20 25 30 4 1 25 100 3.65 8.3 3.65 25 30 40 50 200 60 25 15 V V V A A nA V V S ns ns ns ns pF pF pF oC/W MIN TYP MAX UNITS Drain to Source Breakdown Voltage RFL1N18 RFL1N20 Gate Threshold Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current Drain to Source On-Voltage (Note 2) IGSS VDS(ON) VGS = 20V, VDS = 0V ID = 1A, VGS = 10V ID = 2A, VGS = 10V Drain to Source On Resistance (Note 2) Forward Transconductance (Note 2) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Thermal Resistance Junction to Case rDS(ON) gfs td(ON) tr td(OFF) tf CISS COSS CRSS RJC ID = 1A, VGS = 10V, (Figures 6, 7) ID = 1A, VDS = 10V, (Figure 10) ID 1A, VDD = 100V RGS = 50, VGS = 10V, (Figures 11, 12, 13) Source to Drain Diode Specifications PARAMETER Source to Drain Diode Voltage (Note 2) Diode Reverse Recovery Time NOTE: 2. Pulse test: pulse width 300s maximum, duty cycle 2%. SYMBOL VSD trr ISD = 1A ISD = 2A, dISD/dt = 50A/s TEST CONDITIONS MIN TYP 200 MAX 1.4 UNITS V ns 5-2 RFL1N18, RFL1N20 Typical Performance Curves 1.2 POWER DISSIPATION MULTIPLIER 1.0 ID, DRAIN CURRENT (A) 0 25 50 75 100 TC, CASE TEMPERATURE (oC) 125 150 0.8 0.6 0.4 0.2 0 Unless Otherwise Specified 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 25 50 75 100 125 TC, CASE TEMPERATURE (oC) 150 FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE 10.00 TC = 25oC TJ = MAX RATED ID, DRAIN CURRENT (A) 3.0 250s PULSE TEST DUTY CYCLE 20% TC = 25oC VGS = 20V VGS = 10V VGS = 8V VGS = 7V VGS = 6V 1.0 VGS = 5V 0.5 VGS = 4V 0 2.5 2.0 1.5 ID , DRAIN CURRENT (A) 1.00 0.10 OPERATION IN THIS AREA LIMITED BY rDS(ON) RFL1N18 RFL1N20 0.01 1 10 100 1000 0 1 VDS , DRAIN TO SOURCE VOLTAGE (V) 2 3 4 5 VDS , DRAIN TO SOURCE VOLTAGE (V) 6 7 FIGURE 3. FORWARD BIAS SAFE OPERATING AREA FIGURE 4. SATURATION CHARACTERISTICS 3.0 VDS = 15V 250s PULSE TEST DUTY CYCLE 2% TC = -40oC TC = 125oC TC = 25oC rDS(ON), DRAIN TO SOURCE ON RESISTANCE () 6 5 4 TC = 25oC 3 2 1 0 0 2 4 6 8 10 VGS , GATE TO SOURCE VOLTAGE (V) 12 0 0.5 1.0 1.5 2.0 2.5 3.0 ID , DRAIN CURRENT (A) TC = -40oC VGS = 10V 250s PULSE TEST DUTY CYCLE 2% TC = 125oC 2.5 ID , DRAIN CURRENT (A) 2.0 1.5 1.0 0.5 0 TC = 125oC TC = -40oC FIGURE 5. TRANSFER CHARACTERSTICS FIGURE 6. DRAIN TO SOURCE ON RESISTANCE vs GATE VOLTAGE AND DRAIN CURRENT 5-3 RFL1N18, RFL1N20 Typical Performance Curves 2.0 NORMALIZED DRAIN TO SOURCE ON RESISTANCE VGS = 10V, ID = 1A Unless Otherwise Specified (Continued) 1.4 VGS = VDS, ID = 250A 1.5 NORMALIZED GATE THRESHOLD VOLTAGE 0 50 100 150 1.2 1.0 1.0 0.5 0.8 0 -50 0.6 -50 TJ , JUNCTION TEMPERATURE (oC) 0 50 100 TJ , JUNCTION TEMPERATURE (oC) 150 FIGURE 7. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE FIGURE 8. NORMALIZED GATE THRESHOLD vs JUNCTION TEMPERATURE 220 180 C, CAPACITANCE (pF) 140 100 60 20 f = 1MHz gfs, TRANSCONDUCTANCE (S) 1000 900 800 700 600 500 400 300 200 100 0 60 0 0.5 1 1.5 ID, DRAIN CURRENT (A) 2 2.5 VDS = 15V 250s PULSE TEST DUTY CYCLE 2% TC = -40oC CISS TC = 25oC TC = 125oC COSS CRSS 0 10 20 30 40 50 VDS, DRAIN TO SOURCE VOLTAGE (V) FIGURE 9. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE FIGURE 10. TRANSCONDUCTANCE vs DRAIN CURRENT 200 BVDSS VDD = VDSS 10 VDD = VDSS GATE TO SOURCE VOLTAGE 0.75VDSS 0.50VDSS 0.25VDSS 8 VGS , VOLTS (V) 150 VDS , VOLTS (V) 6 100 4 50 RL = 100 IG(REF) = 0.09mA VGS = 10V DRAIN TO SOURCE VOLTAGE IG(REF) IG(ACT) t, TIME (s) IG(REF) IG(ACT) 2 0 20 0 80 NOTE: Refer to Harris Application Notes AN7254 and AN7260. FIGURE 11. NORMALIZED SWITCHING WAVEFORMS FOR CONSTANT GATE CURRENT 5-4 RFL1N18, RFL1N20 Test Circuit and Waveforms tON td(ON) tr RL VDS 90% tOFF td(OFF) tf 90% + RG DUT - VDD 0 10% 90% 10% VGS VGS 0 10% 50% PULSE WIDTH 50% FIGURE 12. SWITCHING TIME TEST CIRCUIT FIGURE 13. RESISTIVE SWITCHING WAVEFORMS 5-5 |
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