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S6A13 TOSHIBA Thyristor Silicon Planar Type S6A13 Condenser Discharge Control Applications Unit: mm FWD included between cathode and anode Critical rate of rise of ON-state current: di/dt = 750 A/s Repetitive peak surge ON-state current: ITRM = 500 A (tw = 2 s) Repetitive peak OFF-state voltage: VDRM = 800 V Gate trigger current: IGT = 30 mA max. * * * * * Maximum Ratings Characteristics Repetitive peak OFF-state voltage Repetitive peak surge ON-state current (Note) Repetitive peak surge forward current (Note) Critical rate of rise of ON-state current (Note) Peak gate power dissipation Average gate power dissipation Peak forward gate voltage Peak reverse gate voltage Peak forward gate current Junction temperature Storage temperature range Symbol VDRM ITRM IFRM Rating 800 500 500 Unit V A A di/dt PGM PG (AV) VFGM VRGM IGM Tj Tstg 750 5 0.5 10 -5 2 -40~125 -40~150 A/ms W W V V A C C JEDEC JEITA TOSHIBA 13-10J1B Weight: 1.5 g (typ.) Note: VD < 0.8 rated, Tc = 85C, igp > 60 mA, tgw > 10 ms, tgr < 150 ns = = = = Marking 1 2 1 MARK S6A13 TYPE NAME S6A13 2 Lot Number Month (starting from alphabet A) Year (last decimal digit of the current year) 1 2002-01-23 S6A13 Electrical Characteristics (Ta = 25C) Characteristics Repetitive peak OFF-state current Peak ON-state voltage (thyristor) Peak forward voltage (diode) Gate trigger voltage Gate trigger current Gate non-trigger voltage Critical rate of rise of OFF-state voltage Holding current Thermal resistance (junction to ambient) Symbol IDRM VTM VFM VGT IGT VGD dv/dt IH Rth (j-a) Test Condition VDRM = Rated ITM = 25 A IFM = 25 A VD = 6 V, RL = 10 W VD = Rated, Tc = 125C VDRM = Rated, Tc = 125C Exponential Rise VD = 6 V, ITM = 1 A DC Min 3/4 3/4 3/4 3/4 3/4 0.2 3/4 3/4 3/4 Typ. 3/4 3/4 3/4 3/4 3/4 3/4 50 3/4 3/4 Max 10 1.5 2.0 1.0 30 3/4 3/4 35 70 Unit mA V V V mA V V/ms mA C/W Test Circuit Examples R 0.5 IP IP L S6A13 VD C tw = p LC , IP = VD L/C t tw = 2 ms di/dt = 0.5 IP t Equivalent Circuit ANODE GATE CATHODE 2 2002-01-23 S6A13 IGT (Tc)/IGT (Tc = 25C) - Tc 2.5 (typical) 2.0 VD = 6 V RL = 10 W VGT (Tc)/VGT (Tc = 25C) - Tc (typical) VD = 6 V RL = 10 W 2.0 VGT (Tc)/VGT (Tc = 25C) -20 IGT (Tc)/IGT (Tc = 25C) 1.5 1.5 1.0 1.0 0.5 0.5 0.0 -60 20 60 100 140 0.0 -60 -20 20 60 100 140 Case temperature Tc (C) Case temperature Tc (C) IH (Tc)/IH (Tc = 25C) - Tc 2.5 (typical) 5 VD = 6 V ITM = 1 A Pulse trigger characteristics VD = 6 V RL = 10 W Tc = 25C (typical) Resistance load 4 2.0 IH (Tc)/IH (Tc = 25C) Rectangular waveform iGT(tw)/IGT 1.5 3 tw 2 iGT 1.0 0.5 1 0.0 -60 -20 20 60 100 140 0 0.1 1 10 100 Case temperature Tc (C) Gate trigger pulse width tw (ms) iT - vT (thyristor) 1000 1000 iF - vF (diode) (A) iT (A) Instantaneous ON-state current 100 Instantaneous forward current iF 100 10 10 Tj = 125C 1 0.0 25C Tj = 125C 1 0.0 25C 0.5 1.0 1.5 2.0 2.5 3.0 1.0 2.0 3.0 4.0 5.0 6.0 Instantaneous ON-state voltage vT (V) Instantaneous forward voltage vF (V) 3 2002-01-23 S6A13 RESTRICTIONS ON PRODUCT USE 000707EAA * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice. 4 2002-01-23 |
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