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| Transistor 2SA1619, 2SA1619A Silicon PNP epitaxial planer type For low-frequency power amplification and driver amplification Complementary to 2SC4208 and 2SC4208A 5.00.2 4.00.2 Unit: mm s q q Features Complementary pair with 2SC4208 and 2SC4208A. Allowing supply with the radial taping and automatic insertion possible. (Ta=25C) Ratings -30 -60 -25 -50 -5 -1 - 0.5 1 150 -55 ~ +150 Unit V 0.45 -0.1 +0.15 Parameter Collector to base voltage Collector to 2SA1619 2SA1619A 2SA1619 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 13.50.5 s Absolute Maximum Ratings 0.70.1 0.70.2 8.00.2 0.45 -0.1 +0.15 emitter voltage 2SA1619A Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature V A A W C C 123 2.540.15 2.30.2 V 1.27 1.27 1:Emitter 2:Collector 3:Base TO-92NL Package s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage 2SA1619 2SA1619A 2SA1619 2SA1619A (Ta=25C) Symbol ICBO VCBO VCEO VEBO hFE1* hFE2 VCE(sat) VBE(sat) fT Cob Conditions VCB = -20V, IE = 0 IC = -10A, IE = 0 IC = -10mA, IB = 0 IE = -10A, IC = 0 VCE = -10V, IC = -150mA VCE = -10V, IC = -500mA IC = -300mA, IB = -30mA IC = -300mA, IB = -30mA VCB = -10V, IE = 50mA, f = 200MHz VCB = -10V, IE = 0, f = 1MHz -30 -60 -25 -50 -5 85 40 - 0.35 -1.1 200 6 15 - 0.6 -1.5 V V MHz pF 160 340 min typ max - 0.1 Unit A V V V Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance *h FE1 Rank classification Q 85 ~ 170 R 120 ~ 240 S 170 ~ 340 Rank hFE1 1 Transistor PC -- Ta 1.2 -800 -700 1.0 2SA1619, 2SA1619A IC -- VCE Ta=25C -800 VCE=-10V Ta=25C -700 IC -- IB Collector power dissipation PC (W) -600 -500 -400 -300 -200 -100 0.8 -4mA -3mA -2mA -1mA 0.6 0.4 0.2 -100 0 0 -4 -8 -12 -16 -20 0 -2 -4 -6 -8 -10 0 0 20 40 60 80 100 120 140 160 0 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (A) IB=-10mA -9mA -8mA -7mA -6mA -5mA -600 -500 -400 -300 -200 Base current IB (mA) VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) -100 -30 -10 -3 -1 Ta=75C 25C -25C VBE(sat) -- IC Base to emitter saturation voltage VBE(sat) (V) IC/IB=10 -100 -30 -10 -3 -1 Ta=-25C 75C 25C IC/IB=10 600 hFE -- IC VCE=-10V Forward current transfer ratio hFE 500 400 300 Ta=75C 200 25C -25C - 0.3 - 0.1 - 0.03 - 0.3 - 0.1 - 0.03 - 0.01 - 0.01 - 0.03 - 0.1 - 0.3 100 - 0.01 - 0.01 - 0.03 - 0.1 - 0.3 -1 -3 -10 -1 -3 -10 0 - 0.01 - 0.03 - 0.1 - 0.3 -1 -3 -10 Collector current IC (A) Collector current IC (A) Collector current IC (A) fT -- IE 240 24 Cob -- VCB Collector output capacitance Cob (pF) Collector to emitter voltage VCER (V) VCB=-10V Ta=25C IE=0 f=1MHz Ta=25C -120 VCER -- RBE IC=-2mA Ta=25C Transition frequency fT (MHz) 200 20 -100 160 16 -80 120 12 -60 2SA1619A -40 2SA1619 -20 80 8 40 4 0 1 3 10 30 100 0 -1 0 -3 -10 -30 -100 1 3 10 30 100 300 1000 Emitter current IE (mA) Collector to base voltage VCB (V) Base to emitter resistance RBE (k) 2 Transistor ICEO -- Ta 104 VCE=-10V -10 -3 2SA1619, 2SA1619A Area of safe operation (ASO) Single pulse Ta=25C Collector current IC (mA) 103 -1 ICP IC t=1s t=10ms ICEO (Ta) ICEO (Ta=25C) - 0.3 - 0.1 - 0.03 - 0.01 102 10 - 0.003 1 0 40 80 120 160 200 - 0.001 - 0.1 - 0.3 -1 -3 -10 -30 -100 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) 3 |
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