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Power Transistors
2SB1054
Silicon PNP triple diffusion planar type
Unit: mm
(0.7)
For high power amplification Complementary to 2SD1485
21.00.5
15.00.3 11.00.2
5.00.2 (3.2)
* Excellent current IC characteristics of forward current transfer ratio hFE vs. collector * Wide area of safe operation (ASO) * High transition frequency fT * Full-pack package which can be installed to the heat sink with one screw
16.20.5 (3.5) Solder Dip
15.00.2
I Features
3.20.1
2.00.2 1.10.1
2.00.1 0.60.2
5.450.3
I Absolute Maximum Ratings TC = 25C
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation TC = 25C Ta = 25C Tj Tstg Symbol VCBO VCEO VEBO ICP IC PC Rating -100 -100 -5 -8 -5 60 3 150 -55 to +150 C C Unit V V V A A W
10.90.5 1 2 3
1 : Base 2 : Collector 3 : Emitter EIAJ : SC-96 TOP-3F-A Package
Junction temperature Storage temperature
I Electrical Characteristics TC = 25C
Parameter Collector cutoff current Emitter cutoff current Forward current transfer ratio Symbol ICBO IEBO hFE1 hFE2 * hFE3 Base to emitter voltage Collector to emitter saturation voltage Transition frequency Collector output capacitance Note) *: Rank classification Rank hFE2 Q 60 to 120 P 100 to 200 VBE VCE(sat) fT Cob Conditions VCB = -100 V, IE = 0 VEB = -3 V, IC = 0 VCE = -5 V, IC = -20 mA VCE = -5 V, IC = -1 A VCE = -5 V, IC = -3 A VCE = -5 V, IC = -3 A IC = -3 A, IB = - 0.3 A VCE = -5 V, IC = - 0.5 A, f = 1 MHz VCB = -10 V, f = 1 MHz 20 170 20 60 20 -1.8 - 0.2 V V MHz pF 200 Min Typ Max -50 -50 Unit A A
1
2SB1054
PC T a
80
Power Transistors
IC VCE
-6 TC=25C IB=-80mA -5 -5 25C TC=100C -4 -25C -6 VCE=-5V
IC VBE
Collector power dissipation PC (W)
70 (1) 60 50 40 30 20 10 (3) 0 0 20 40
Collector current IC (A)
-4
-60mA -50mA -40mA
-3
Collector current IC (A)
(1)TC=Ta (2)With a 100x100x2mm Al heat sink (3)Without heat sink (PC=3.0W)
-70mA
-30mA -20mA
-3
-2 -10mA -1 -5mA
-2
(2)
-1
0 60 80 100 120 140 160 0 -2 -4 -6 -8 -10 -12
0 0 -0.4 -0.8 -1.2 -1.6 -2.0
Ambient temperature Ta (C)
Collector to emitter voltage VCE (V)
Base to emitter voltage VBE (V)
VCE(sat) IC
Collector to emitter saturation voltage VCE(sat) (V)
-100 -30 -10 -3 TC=100C -1 25C -0.3 -0.1 -25C IC/IB=10 10000
hFE IC
VCE=-5V 1000 300 100 30 10 3 1 0.3
fT I C
VCE=-5V f=1MHz TC=25C
Forward current transfer ratio hFE
1000 300 100 -25C 30 10 3 1 -0.01 -0.03 -0.1 -0.3 TC=100C 25C
-0.03 -0.01 -0.01 -0.03 -0.1 -0.3
Transition frequency fT (MHz)
-1 -3 -10
3000
-1
-3
-10
0.1 -0.01 -0.03 -0.1 -0.3
-1
-3
-10
Collector current IC (A)
Collector current IC (A)
Collector current IC (A)
Area of safe operation (ASO)
-100 -30 Non repetitive pulse TC=25C 103
Rth(t) t
(1)PT=10Vx0.3A(3W) and without heat sink (2)PT=10Vx1A(10W) and with a 100x100x2mm Al heat sink
-10 -3 -1 -0.3 -0.1
ICP IC DC t=10ms t=1ms
Thermal resistance Rth(t) (C/W)
Collector current IC (A)
102 (1) 10
(2)
1
-0.03 -0.01 -1
-3
-10
-30
-100 -300 -1000
10-1 10-3
10-2
10-1
1
10
102
103
104
Collector to emitter voltage VCE (V)
Time t (s)
2
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2001 MAR

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