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Transistor
2SD2457
Silicon NPN epitaxial planer type
For low-frequency power amplification
Unit: mm
s Features
q q q
4.50.1 1.60.2
1.50.1
1.0-0.2
+0.1
High collector to emitter voltage VCEO. Large collector power dissipation PC. Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.
2.60.1
0.4max.
45
0.40.08 0.50.08 1.50.1 3.00.15
4.0-0.20
0.40.04
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
*
(Ta=25C)
Ratings 50 40 5 3 1.5 1 150 -55 ~ +150 1cm2 Unit V V V A A W C C
1:Base 2:Collector 3:Emitter
3
2
1
Symbol VCBO VCEO VEBO ICP IC PC* Tj Tstg
marking
EIAJ:SC-62 Mini Power Type Package
Marking symbol : 1Y
Printed circuit board: Copper foil area of thickness of 1.7mm for the collector portion
or more, and the board
s Electrical Characteristics
Parameter Collector cutoff current Emitter cutoff current Collector to base voltage Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance
*1h FE Rank classification
(Ta=25C)
Symbol ICBO ICEO IEBO VCBO VCEO hFE*1 VCE(sat) VBE(sat) fT Cob Conditions VCB = 20V, IE = 0 VCE = 10V, IB = 0 VEB = 5V, IE = 0 IC = 1mA, IE = 0 IC = 2mA, IB = 0 VCE = 5V, IC = 1A*2 IC = 1.5A, IB = 0.15A*2 IC = 2A, IB = 0.2A*2 VCB = 5V, IE = -0.5A*2, f = 200MHz 150 45
*2
min
typ
max 1 100 10
Unit A A A V V
50 40 80 120 220 1 1.5
MHz pF Pulse measurement
VCB = 20V, IE = 0, f = 1MHz
Rank hFE
Q 80 ~ 160
R 120 ~ 220
2.50.1
+0.25
V V
1
Transistor
PC -- Ta
1.2 4.0 Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. 3.5
2SD2457
IC -- VCE
Collector to emitter saturation voltage VCE(sat) (V)
Ta=25C IB=40mA 35mA 30mA 2.5 2.0 1.5 10mA 1.0 0.5 5mA 25mA 20mA 15mA 10 3 1 0.3 0.1 0.03 0.01 0.003 0.001 0.01 0.03 Ta=75C 25C -25C
VCE(sat) -- IC
IC/IB=10
Collector power dissipation PC (W)
1.0
Collector current IC (A)
3.0
0.8
0.6
0.4
0.2
0 0 20 40 60 80 100 120 140 160
0 0 2 4 6 8 10
0.1
0.3
1
3
10
Ambient temperature Ta (C)
Collector to emitter voltage VCE (V)
Collector current IC (A)
VBE(sat) -- IC
100
hFE -- IC
IC/IB=10 300 VCE=5V 240
fT -- I E
VCB=5V Ta=25C
Base to emitter saturation voltage VBE(sat) (V)
250
Transition frequency fT (MHz)
1 3 10
30 10 3 25C 1 0.3 0.1 0.03 0.01 0.01 0.03 Ta=-25C 75C
Forward current transfer ratio hFE
200
200 Ta=75C 150 25C -25C 100
160
120
80
50
40
0.1
0.3
1
3
10
0 0.01 0.03
0.1
0.3
0 - 0.01 - 0.03 - 0.1 - 0.3
-1
-3
-10
Collector current IC (A)
Collector current IC (A)
Emitter current IE (A)
Cob -- VCB
120
Collector output capacitance Cob (pF)
100
IE=0 f=1MHz Ta=25C
80
60
40
20
0 1 3 10 30 100
Collector to base voltage VCB (V)
2
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A. These materials are intended as a reference to assist customers with the selection of Panasonic semiconductor products best suited to their applications. Due to modification or other reasons, any information contained in this material, such as available product types, technical data, and so on, is subject to change without notice. Customers are advised to contact our semiconductor sales office and obtain the latest information before starting precise technical research and/or purchasing activities. B. Panasonic is endeavoring to continually improve the quality and reliability of these materials but there is always the possibility that further rectifications will be required in the future. Therefore, Panasonic will not assume any liability for any damages arising from any errors etc. that may appear in this material. C. These materials are solely intended for a customer's individual use. Therefore, without the prior written approval of Panasonic, any other use such as reproducing, selling, or distributing this material to a third party, via the Internet or in any other way, is prohibited.
2001 MAR

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