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| Composite Transistors XN04683 (XN4683) Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2) Unit: mm For high-frequency amplification/For general amplification 0.650.15 6 0.95 2.8 -0.3 +0.2 +0.25 1.5 -0.05 0.650.15 1 2.9 -0.05 G G Two elements incorporated into one package. Reduction of the mounting area and assembly cost by one half. 1.90.1 +0.2 I Features 0.3 -0.05 0.5 -0.05 5 2 0.95 4 3 1.1-0.1 G 2SC2404 + 2SB0709A(2SB709A) 0.40.2 I Absolute Maximum Ratings Parameter Collector to base voltage Tr1 Collector to emitter voltage Emitter to base voltage Collector current Collector to base voltage Collector to emitter voltage Tr2 Emitter to base voltage Collector current Peak collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC VCBO VCEO VEBO IC ICP PT Tj Tstg (Ta=25C) Ratings 30 20 3 15 -60 -50 -7 -100 -200 200 150 -55 to +150 Unit V V V mA V V V mA mA mW C C 1 : Collector (Tr1) 2 : Base (Tr2) 3 : Emitter (Tr2) 4 : Collector (Tr2) 5 : Base (Tr1) 6 : Emitter (Tr1) EIAJ : SC-74 Mini Type Package (6-pin) Marking Symbol: ER Internal Connection 6 5 4 Tr1 1 2 3 Tr2 Note.) The Part number in the Parenthesis shows conventional part number. 0 to 0.05 0.1 to 0.3 0.8 0.16-0.06 I Basic Part Number of Element +0.2 +0.1 1.450.1 +0.1 +0.1 1 Composite Transistors XN04683 (Ta=25C) Symbol VCBO VEBO hFE1 VBE Cre fT NF PG Conditions IC = 10A, IE = 0 IE = 10A, IC = 0 VCE = 6V, IC = -1mA VCB = 6V, IE = -1mA VCB = 6V, IE = -1mA, f = 10.7MHz VCB = 6V, IE = -1mA, f = 200MHz VCB = 6V, IE = -1mA, f = 100MHz VCB = 6V, IE = -1mA, f = 100MHz 450 min 30 3 40 720 0.8 650 3.3 24 1 260 mV pF MHz dB dB typ max Unit V V I Electrical Characteristics G Tr1 Parameter Collector to base voltage Emitter to base voltage Forward current transfer ratio Base to emitter voltage Feedback capacitance Transition frequency Noise figure Power gain G Tr2 Parameter Symbol VCBO VCEO VEBO ICBO ICEO hFE VCE(sat) fT Cob Conditions IC = -10A, IE = 0 IC = -2mA, IB = 0 IE = -10A, IC = 0 VCB = -20V, IE = 0 VCE = -10V, IB = 0 VCE = -10V, IC = -2mA IC = -100mA, IB = -10mA VCB = -10V, IE = 1mA, f = 200MHz VCB = -10V, IE = 0, f = 1MHz 160 - 0.3 80 2.7 min -60 -50 -7 - 0.1 -100 460 - 0.5 V MHz pF typ max Unit V V V A A Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector cutoff current Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance 2 Composite Transistors Common characteristics chart PT -- Ta 400 XN04683 Total power dissipation PT (mW) 300 200 100 0 0 40 80 120 160 Ambient temperature Ta (C) Characteristics charts of Tr1 IC -- VCE 12 Ta=25C 10 IB=100A 10 12 VCE=6V Ta=25C 25 IC -- I B 30 IC -- VBE VCE=6V 25C Ta=75C 20 -25C Collector current IC (mA) Collector current IC (mA) 8 80A 8 60A 6 40A 4 20A 2 6 Collector current IC (mA) 0 40 80 120 160 15 4 10 2 5 0 0 4 8 12 16 0 0 0 0.4 0.8 1.2 1.6 2.0 Collector to emitter voltage VCE (V) Base current IB (A) Base to emitter voltage VBE (V) VCE(sat) -- IC 100 hFE -- IC IC/IB=10 fT -- I E 1200 360 VCE=6V Collector to emitter saturation voltage VCE(sat) (V) Transition frequency fT (MHz) 30 10 3 1 0.3 25C 0.1 0.03 0.01 0.1 Ta=75C -25C Forward current transfer ratio hFE VCB=6V Ta=25C 1000 300 240 Ta=75C 25C 120 -25C 800 180 600 400 60 200 0.3 1 3 10 30 100 0 0.1 0.3 1 3 10 30 100 0 -0.1 -0.3 -1 -3 -10 -30 -100 Collector current IC (mA) Collector current IC (mA) Emitter current IE (mA) 3 Composite Transistors Zrb -- IE Reverse transfer impedance Zrb () VCB=6V f=2MHz Ta=25C XN04683 Cre -- VCE Common emitter reverse transfer capacitance Cre (pF) 2.4 Cob -- VCB Collector output capacitance Cob (pF) IC=1mA f=10.7MHz Ta=25C 1.2 f=1MHz IE=0 Ta=25C 120 100 2.0 1.0 80 1.6 0.8 60 1.2 0.6 40 0.8 0.4 20 0.4 0.2 0 -0.1 -0.3 -1 -3 -10 0 0.1 0 0.3 1 3 10 30 100 0 5 10 15 20 25 30 Emitter current IE (mA) Collector to emitter voltage VCE (V) Collector to base voltage VCB (V) PG -- IE 40 35 f=100MHz Rg=50 Ta=25C NF -- IE 12 f=100MHz Rg=50 Ta=25C 10 VCE=10V 6V Noise figure NF (dB) Power gain PG (dB) 30 25 20 15 10 5 0 -0.1 -0.3 8 6 VCE=6V, 10V 4 2 -1 -3 -10 -30 -100 0 -0.1 -0.3 -1 -3 -10 -30 -100 Emitter current IE (mA) Emitter current IE (mA) Characteristics charts of Tr2 IC -- VCE -60 Ta=25C -50 IB=-300A -50 -60 VCE=-5V Ta=25C IC -- I B -400 -350 IB -- VBE VCE=-5V Ta=25C Collector current IC (mA) Collector current IC (mA) -250A -40 -200A -30 -40 Base current IB (A) 0 -100 -200 -300 -400 -300 -250 -200 -150 -100 -50 -150A -30 -20 -100A -20 -10 -50A -10 0 0 -2 -4 -6 -8 -10 -12 -14 -16 -18 0 0 0 -0.4 -0.8 -1.2 -1.6 Collector to emitter voltage VCE (V) Base current IB (A) Base to emitter voltage VBE (V) 4 Composite Transistors IC -- VBE -240 -10 XN04683 VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) hFE -- IC IC/IB=10 600 VCE=-10V VCE=-5V -200 25C Ta=75C -160 -25C -3 -1 -0.3 -0.1 -0.03 -0.01 Ta=75C 25C -25C Forward current transfer ratio hFE 500 Collector current IC (mA) 400 Ta=75C 300 25C -25C 200 -120 -80 -40 100 -0.003 -0.001 -1 0 0 -0.4 -0.8 -1.2 -1.6 -2.0 -3 -10 -30 -100 -300 -1000 0 -1 -3 -10 -30 -100 -300 -1000 Base to emitter voltage VBE (V) Collector current IC (mA) Collector current IC (mA) fT -- IE 160 8 Cob -- VCB Collector output capacitance Cob (pF) f=1MHz IE=0 Ta=25C VCB=-10V Ta=25C Transition frequency fT (MHz) 140 120 100 80 60 40 20 0 0.1 7 6 5 4 3 2 1 0 -1 0.3 1 3 10 30 100 -2 -3 -5 -10 -20 -30 -50 -100 Emitter current IE (mA) Collector to base voltage VCB (V) 5 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuit examples of the products. It does not constitute the warranting of industrial property, the granting of relative rights, or the granting of any license. (3) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (4) The products and product specifications described in this material are subject to change without notice for reasons of modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, redundant design is recommended, so that such equipment may not violate relevant laws or regulations because of the function of our products. (6) When using products for which dry packing is required, observe the conditions (including shelf life and after-unpacking standby time) agreed upon when specification sheets are individually exchanged. (7) No part of this material may be reprinted or reproduced by any means without written permission from our company. Please read the following notes before using the datasheets A. These materials are intended as a reference to assist customers with the selection of Panasonic semiconductor products best suited to their applications. Due to modification or other reasons, any information contained in this material, such as available product types, technical data, and so on, is subject to change without notice. Customers are advised to contact our semiconductor sales office and obtain the latest information before starting precise technical research and/or purchasing activities. B. Panasonic is endeavoring to continually improve the quality and reliability of these materials but there is always the possibility that further rectifications will be required in the future. Therefore, Panasonic will not assume any liability for any damages arising from any errors etc. that may appear in this material. C. These materials are solely intended for a customer's individual use. Therefore, without the prior written approval of Panasonic, any other use such as reproducing, selling, or distributing this material to a third party, via the Internet or in any other way, is prohibited. 2001 MAR |
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