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| Composite Transistors XN06542 (XN6542) Silicon NPN epitaxial planer transistor Unit: mm For high frequency amplification, oscillation, and mixing (Tr1), For medium-frequency amplification (Tr2) 2.8 -0.3 0.650.15 6 +0.2 +0.25 1.5 -0.05 0.650.15 1 0.3 -0.05 0.5 -0.05 0.95 0.95 I Features G G 2.9 -0.05 1.90.1 +0.2 5 2 Two elements incorporated into one package. Reduction of the mounting area and assembly cost by one half. 1.1-0.1 +0.2 4 3 G 2SC2480 + 2SC4444 0.40.2 I Absolute Maximum Ratings (Ta=25C) Parameter Collector to base voltage Symbol VCBO VCEO VEBO IC VCBO VCEO VEBO IC PT Tj Tstg Ratings 30 20 3 50 45 35 4 50 300 150 -55 to +150 Unit V V V mA V 1 : Collector (Tr1) 2 : Base (Tr1) 3 : Collector (Tr2) 4 : Base (Tr2) 5 : Emitter (Tr2) 6 : Emitter (Tr1) EIAJ : SC-74 Mini Type Package (6-pin) Tr1 Collector to emitter voltage Emitter to base voltage Collector current Collector to base voltage Marking Symbol: 5Z Internal Connection 6 Tr1 1 2 3 Tr2 Collector to emitter voltage Emitter to base voltage Collector current Total power dissipation V V mA mW C C 5 4 Tr2 Overall Junction temperature Storage temperature Note.) The Part number in the Parenthesis shows conventional part number. 0 to 0.05 I Basic Part Number of Element 0.1 to 0.3 0.8 0.16-0.06 +0.1 1.450.1 +0.1 +0.1 1 Composite Transistors XN06542 (Ta=25C) Symbol VCBO VEBO hFE VBE Cre fT PG Crb Conditions IC = 100A, IE = 0 IE = 10A, IC = 0 VCB = 10V, IE = -2mA VCB = 10V, IE = -2mA VCB = 10V, IE = -1mA, f = 10.7MHz VCB = 10V, IE = -15mA, f = 200MHz VCB = 10V, IE = -1mA, f = 100MHz VCE = 6V, IC = 0, f = 1MHz 1000 min 30 3 25 720 1.0 1300 20 0.8 1.5 1600 250 mV pF MHz dB pF typ max Unit V V I Electrical Characteristics G Tr1 Parameter Collector to base voltage Emitter to base voltage Forward current transfer ratio Base to emitter voltage Common emitter reverse transfer capacitance Transition frequency Power gain Reverse transfer capacitance G Tr2 Parameter Symbol VCBO VCEO VEBO ICEO hFE VCE(sat) fT Cre PG Conditions IC = 10A, IE = 0 IC = 1mA, IB = 0 IE = 10A, IC = 0 VCE = 20V, IB = 0 VCB = 10V, IE = -10mA IC = 20mA, IB = 2mA VCB = 10V, IE = -10mA, f = 100MHz VCB = 10V, IE = -1mA, f = 10.7MHz VCB = 10V, IE = -10mA, f = 58MHz 18 300 500 1.5 20 50 min 45 35 4 10 100 0.5 V MHz pF dB typ max Unit V V V A Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector cutoff current Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Common emitter reverse transfer capacitance Power gain Common characteristics chart PT -- Ta 500 Total power dissipation PT (mW) 400 300 200 100 0 0 40 80 120 160 Ambient temperature Ta (C) 2 Composite Transistors Characteristics charts of Tr1 IC -- VCE 24 Ta=25C IB=300A 20 XN06542 IC -- I B 24 VCE=10V Ta=25C 20 400 350 IB -- VBE VCE=10V Ta=25C Collector current IC (mA) 250A 16 200A 12 Collector current IC (mA) 16 Base current IB (A) 0 100 200 300 400 500 300 250 200 150 100 50 150A 12 8 100A 8 4 50A 4 0 0 2 4 6 8 10 12 14 16 18 0 0 0 0.4 0.8 1.2 1.6 2.0 Collector to emitter voltage VCE (V) Base current IB (A) Base to emitter voltage VBE (V) IC -- VBE 60 25C 50 Ta=75C -25C VCE=10V 240 hFE -- IC 100 VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) VCE=10V IC/IB=10 Forward current transfer ratio hFE 200 30 10 3 1 0.3 25C 0.1 -25C 0.03 0.01 0.1 Collector current IC (mA) 40 160 Ta=75C 120 25C -25C 30 20 80 Ta=75C 10 40 0 0 0.4 0.8 1.2 1.6 2.0 0 0.1 0.3 1 3 10 30 100 0.3 1 3 10 30 100 Base to emitter voltage VBE (V) Collector current IC (mA) Collector current IC (mA) fT -- IE Common emitter reverse transfer capacitance Cre (pF) 1600 VCB=10V Ta=25C 1400 1200 1000 800 600 400 200 0 -0.1 -0.3 2.4 Cre -- VCE Reverse transfer impedance Zrb () IC=1mA f=10.7MHz Ta=25C 120 Zrb -- IE VCB=10V f=2MHz Ta=25C Transition frequency fT (MHz) 2.0 100 1.6 80 1.2 60 0.8 40 0.4 20 -1 -3 -10 -30 -100 0 0.1 0.3 1 3 10 30 100 0 -0.1 -0.2 -0.3 -0.5 -1 -2 -3 -5 -10 Emitter current IE (mA) Collector to emitter voltage VCE (V) Emitter current IE (mA) 3 Composite Transistors PG -- IE 40 35 VCB=10V f=100MHz Rg=50 Ta=25C 12 VCB=10V f=100MHz Rg=50 Ta=25C XN06542 NF -- IE 0 yib=gib+jbib VCB=10V bib -- gib Noise figure NF (dB) Power gain PG (dB) 30 25 20 15 10 5 0 -0.1 -0.3 8 Input susceptance bib (mS) 10 -10 -20 IE=-2mA f=900MHz 6 -30 -5mA 600 500 300 4 -40 200 2 -50 -1 -3 -10 -30 -100 0 -0.1 -0.3 -60 -1 -3 -10 -30 -100 0 10 20 30 40 50 Emitter current IE (mA) Emitter current IE (mA) Input conductance gib (mS) brb -- grb 0 48 bfb -- gfb 12 yfb=gfb+jbfb VCB=10V bob -- gob yob=gob+jbob VCE=10V 900 Reverse transfer susceptance brb (mS) -0.4 Output susceptance bob (mS) 300 500 Forward transfer susceptance bfb (mS) yrb=grb+jbrb VCB=10V 200 40 IE=-5mA 32 -2mA 24 500 600 16 f=200MHz 300 10 600 IE=-2mA 6 500 -5mA -0.8 600 -1.2 f=900MHz -2mA -1.6 IE=-5mA 8 4 300 -2.0 8 900 2 f=200MHz -2.4 -1.0 -0.8 -0.6 -0.4 -0.2 0 0 -60 0 -40 -20 0 20 40 0 0.4 0.8 1.2 1.6 2.0 Reverse transfer conductance grb (mS) Forward transfer conductance gfb (mS) Output conductance gob (mS) 4 Composite Transistors Characteristics charts of Tr2 IC -- VCE 80 Ta=25C 70 IB=2.0mA 1.8mA 1.6mA 50 40 30 20 10 0 0 2 4 6 8 10 1.4mA 1.2mA 1.0mA 0.8mA 0.6mA 0.4mA 0.2mA XN06542 IC -- VBE 60 100 VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) VCE=10V IC/IB=10 25C 50 Ta=75C -25C 30 10 3 1 0.3 25C 0.1 -25C 0.03 0.01 0.1 Collector current IC (mA) 60 Collector current IC (mA) 40 30 20 Ta=75C 10 0 0 0.4 0.8 1.2 1.6 2.0 0.3 1 3 10 30 100 Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) Collector current IC (mA) hFE -- IC 120 VCE=10V 600 VCB=10V Ta=25C fT -- I E 3.0 Cob -- VCB Collector output capacitance Cob (pF) f=1MHz IE=0 Ta=25C Forward current transfer ratio hFE Transition frequency fT (MHz) 100 500 2.5 80 Ta=75C 60 25C 40 -25C 400 2.0 300 1.5 200 1.0 20 100 0.5 0 0.1 0.3 1 3 10 30 100 0 -0.1 -0.3 -1 -3 -10 -30 -100 0 1 2 3 5 10 20 30 50 100 Collector current IC (mA) Emitter current IE (mA) Collector to base voltage VCB (V) Cre -- VCE Common emitter reverse transfer capacitance Cre (pF) 2.4 IC=1mA f=10.7MHz Ta=25C 2.0 1.6 1.2 0.8 0.4 0 1 2 3 5 10 20 30 50 100 Collector to emitter voltage VCE (V) 5 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuit examples of the products. It does not constitute the warranting of industrial property, the granting of relative rights, or the granting of any license. (3) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (4) The products and product specifications described in this material are subject to change without notice for reasons of modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, redundant design is recommended, so that such equipment may not violate relevant laws or regulations because of the function of our products. (6) When using products for which dry packing is required, observe the conditions (including shelf life and after-unpacking standby time) agreed upon when specification sheets are individually exchanged. (7) No part of this material may be reprinted or reproduced by any means without written permission from our company. Please read the following notes before using the datasheets A. These materials are intended as a reference to assist customers with the selection of Panasonic semiconductor products best suited to their applications. Due to modification or other reasons, any information contained in this material, such as available product types, technical data, and so on, is subject to change without notice. Customers are advised to contact our semiconductor sales office and obtain the latest information before starting precise technical research and/or purchasing activities. B. Panasonic is endeavoring to continually improve the quality and reliability of these materials but there is always the possibility that further rectifications will be required in the future. Therefore, Panasonic will not assume any liability for any damages arising from any errors etc. that may appear in this material. C. These materials are solely intended for a customer's individual use. Therefore, without the prior written approval of Panasonic, any other use such as reproducing, selling, or distributing this material to a third party, via the Internet or in any other way, is prohibited. 2001 MAR |
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