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Preliminary
DESCRIPTION
The MGF0917A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers.
MITSUBISHI SEMICONDUCTOR
MGF0917A
L & S BAND GaAs FET [ SMD non - matched ]
FEATURES
* High output power Po=24dBm(TYP.) @f=1.9GHz,Pin=4dBm * High power gain Gp=21dB(TYP.) @f=1.9GHz * High power added efficiency hadd=38%(TYP.) @f=1.9GHz,Pin=4dBm * Hermetic Package
APPLICATION
* For UHF Band power amplifiers
Fig.1
QUALITY
* GG
RECOMMENDED BIAS CONDITIONS
* Vds=10V * Ids=75mA * Rg=2kW
Delivery
Tape & Reel
(Ta=25C)
Absolute maximum ratings
Symbol
VGSO
Parameter
Gate to sourcebreakdown voltage
Ratings
-15 -15 200 -0.6 2.5 2 175 -65 to +175
Unit
V V mA mA mA W C C
VGDO Gate to drain breakdown voltage ID IGR IGF PT Tch Tstg
Drain current Reverse gate current Forward gate current Total power dissipation Cannel temperature Storage temperature
Electrical characteristics
Symbol
IDSS VGS(off) gm Po hadd GLP NF Rth(ch-c)
(Ta=25C)
Parameter
Saturated drain current Gate to source cut-off voltage Transconductance Output power Power added Efficiency Linear Power Gain Noise figure Thermal Resistance *1
Test conditions
Min. VDS=3V,VGS=0V VDS=3V,ID=0.5mA VDS=3V,ID=75mA VDS=10V,ID=75mA,f=1.9GHz Pin=4dBm VDS=10V,ID=75mA,f=1.9GHz DVf Method -1.0 23 -
Limits
Typ. 150 70 24 38 21 0.9 55 Max. 200 -5.0 75
Unit
mA V mS dBm % dB dB C/W
*1:Channel to case /
Above parameters, ratings, limits are subject to change.
Mitsubishi Electric
July 1999
MGF0917A TYPICAL CHARACTERISTICS
Po,Gp,PAE vs.Pin 30 25 20 Po(dBm) PAE 15 Gp 10 5 0 -15 -10 -5 0 5 10 Pin(dBm) 20 10 0 30 60 50 Po Gp(dB),PAE(%)
IM3(dBc)
Vds=10V Id(off)=75mA f=1.9GHz
40
Pi(SCL) vs.Po(SCL),IM3 30 25 20 15 10 5 0 -5 -10 -15 -20 0 -5 -10 -15 -20 -25 -30 -35 -40 -45 -50 0 5 10 15
Po(SCL)(dBm)
VD=10V ID=75mA f1=1.90GHz f2=1.91GHz
Po
IM3
-20
-15
-10
-5
Pin(SCL)(dBm)
Mitsubishi Electric
July 1999
MGF0917A
freq. (GHz) 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2 3.4 3.6 3.8 4.0 4.2 4.4 4.6 4.8 5.0 5.2 5.4 5.6 5.8 6.0 6.2 6.4 6.6 6.8 7.0
S PARAMETERS
S11 Mag 0.958 0.945 0.933 0.922 0.915 0.909 0.903 0.900 0.896 0.893 0.890 0.888 0.885 0.883 0.882 0.880 0.878 0.877 0.875 0.874 0.873 0.872 0.871 0.869 0.868 0.866 0.865 0.864 0.863 0.861 0.860 0.859 0.858 0.857 Ang(deg) -15.02 -29.64 -44.06 -55.42 -64.76 -72.80 -79.76 -85.96 -91.49 -96.48 -101.13 -105.44 -109.41 -113.08 -116.60 -119.84 -123.03 -125.92 -128.79 -131.47 -134.03 -136.57 -138.93 -141.26 -143.50 -145.65 -147.78 -149.81 -151.76 -153.70 -155.63 -157.56 -159.49 -161.42
(Ta=25C , VDS=10V,ID=75mA, Reference Plane see Fig.1)
S21 Mag 4.873 4.511 4.145 3.856 3.616 3.412 3.236 3.079 2.939 2.814 2.700 2.596 2.500 2.412 2.330 2.255 2.185 2.118 2.057 1.999 1.944 1.893 1.844 1.799 1.755 1.714 1.675 1.638 1.603 1.569 1.537 1.505 1.474 1.444 Ang(deg) 169.39 153.57 137.88 125.48 115.28 106.54 98.87 92.04 85.87 80.22 75.13 70.36 65.82 61.70 57.80 54.02 50.57 47.22 44.00 40.88 37.97 35.19 32.49 29.82 27.25 24.88 22.42 20.16 17.91 15.66 13.51 11.38 9.25 7.13 Mag 0.010 0.012 0.014 0.015 0.016 0.017 0.018 0.018 0.019 0.019 0.019 0.020 0.021 0.021 0.021 0.021 0.021 0.022 0.022 0.022 0.022 0.022 0.022 0.023 0.023 0.023 0.023 0.024 0.024 0.024 0.024 0.024 0.024 0.024 S12 Ang(deg) 104.49 87.97 71.58 58.58 47.88 38.74 30.77 23.64 17.17 11.32 5.93 0.96 -3.68 -8.00 -12.10 -15.98 -19.63 -23.18 -26.50 -29.62 -32.73 -35.61 -38.51 -41.18 -43.85 -46.42 -48.88 -51.24 -53.59 -55.84 -58.09 -60.32 -62.55 -64.77 Mag 0.475 0.519 0.564 0.601 0.631 0.656 0.677 0.697 0.715 0.730 0.745 0.758 0.770 0.781 0.792 0.801 0.810 0.818 0.827 0.834 0.841 0.848 0.854 0.860 0.866 0.871 0.876 0.881 0.886 0.890 0.895 0.899 0.903 0.908 S22 Ang(deg) -27.64 -39.50 -51.12 -60.32 -67.93 -74.48 -80.26 -85.32 -90.01 -94.19 -98.13 -101.74 -105.12 -108.29 -111.24 -114.08 -116.80 -119.31 -121.80 -124.18 -126.36 -128.61 -130.67 -132.71 -134.66 -136.59 -138.42 -140.23 -141.96 -143.68 -145.30 -146.92 -148.52 -150.12 K 0.35 0.44 0.51 0.60 0.61 0.65 0.68 0.74 0.75 0.76 0.80 0.80 0.80 0.83 0.82 0.84 0.87 0.85 0.87 0.89 0.87 0.88 0.90 0.88 0.89 0.91 0.91 0.90 0.90 0.91 0.91 0.91 0.91 0.92 MSG/MAG (dB) 26.90 25.79 24.80 24.22 23.44 22.98 22.55 22.38 21.99 21.62 21.48 21.14 20.81 20.68 20.38 20.26 20.14 19.86 19.75 19.64 19.37 19.27 19.17 18.91 18.81 18.72 18.63 18.38 18.29 18.20 18.11 18.03 17.93 17.84
2.0
Gate Mark Round corner (1)
0.80
0.8
Gate Mark
(1) Reference Plane
4.20
(3)
1.20
Reference Plane (2)
4.00
(2)
0.25 2.5
0.6
(1) Gate (2) Drain (3) Source
0.3
B A C K S ID E P A T T E RN
(Unit:mm)
Fig.1 O U T LINE D R A W ING
Mitsubishi Electric July 1999
2.8

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