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Ordering number:ENN6441
N-Channel and P-Channel Silicon MOSFETs
CPH5605
Ultrahigh-Speed Switching Applications
Features
* The CPH5605 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON resistance and high-speed switching, thereby enabling high-density mounting. * 2.5V drive.
Package Dimensions
unit:mm 2168
[CPH5605]
2.9 5 4 3
0.6
1 0.95
2 0.4
0.6
1.6
2.8
0.05
Specifications
Absolute Maximum Ratings at Ta = 25C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW10s, duty cycle1% Conditions
0.4
1 : Drain1 2 : Drain2 3 : Gate2 4 : Source 5 : Gate1 SANYO : CPH5
0.2
0.7
0.9
Ratings N-channel 20 10 1.4 5.6 P-channel -20 10 -1 -4 0.9 150 -55 to +150
0.2
0.15
Unit V V A A W
Mounted on a ceramic board (600mm2x0.8mm) 1unit
C C
Electrical Characteristics at Ta = 25C
Parameter [N-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 ID=1mA, VGS=0 VDS=20V, VGS=0 VGS=8V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=700mA ID=700mA, VGS=4V ID=400mA, VGS=2.5V 0.4 1.8 2.5 200 260 260 360 20 10 10 1.3 V A A V S m m Symbol Conditions Ratings min typ max Unit
Marking : FE
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
30300TS (KOTO) TA-2490 No.6441-1/6
CPH5605
Continued from preceding page.
Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage [P-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Symbol Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz See specified Test Circuit See specified Test Circuit See specified Test Circuit See specified Test Circuit VDS=10V, VGS=10V, ID=1.4A VDS=10V, VGS=10V, ID=1.4A VDS=10V, VGS=10V, ID=1.4A IS=1.4A, VGS=0 ID=-1mA, VGS=0 VDS=-20V, VGS=0 VGS=8V, VDS=0 VDS=-10V, ID=-1mA VDS=-10V, ID=-500mA ID=-500mA, VGS=-4V ID=-300mA, VGS=-2.5V VDS=-10V, f=1MHz VDS=-10V, f=1MHz VDS=-10V, f=1MHz See specified Test Circuit See specified Test Circuit See specified Test Circuit See specified Test Circuit VDS=-10V, VGS=-10V, ID=-1.0A VDS=-10V, VGS=-10V, ID=-1.0A VDS=-10V, VGS=-10V, ID=-1.0A IS=-1.0A, VGS=0 -0.4 1.0 1.4 420 630 100 60 25 10 25 27 32 5 1 1 -0.9 -1.5 550 890 -20 -10 10 -1.4 Conditions Ratings min typ 90 60 28 10 20 20 20 6 1 2 0.9 1.2 max Unit pF pF pF ns ns ns ns nC nC nC V V A A V S m m pF pF pF ns ns ns ns nC nC nC V
Electrical Connection
G1
S
G2
D1
D2
(Top view)
Switching Time Test Circuit [N-channel]
VDD=10V VIN 4V 0V VIN PW=10s D.C.1% ID=700mA RL=14.3
Switching Time Test Circuit [P-channel]
VDD=--10V VIN 0V --4V VIN PW=10s D.C.1% ID=--500mA RL=20
D G
VOUT
D G
VOUT
P.G
50
P.G
50
S
S
No.6441-2/6
CPH5605
2.0 1.8 1.6
ID -- VDS
3. 0V
[Nch]
--1.6
ID -- VDS
0V
--8.0V
[Pch]
.0V --3
--1 0.0 V
V
--6 .
4.0
Drain Current, ID - A
1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 0.1
10. 0V
2.0V
Drain Current, ID - A
2.5
V
--1.2 --1.0 --0.8 --0.6 --0.4 --0.2 0
--4
.0V
8.0V 6.0V
--1.4
V --2.5
--2.0V
VGS=1.5V
VGS=--1.5V
0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
Drain-to-Source Voltage, VDS - V
4.0
IT01074
Drain-to-Source Voltage, VDS - V
--3.0
IT00780
ID -- VGS
VDS=10V
Ta= --25 C
[Nch] VDS=--10V
--2.5
ID -- VGS
[Pch]
3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0 0.5 1.0 1.5
25 C
Ta= --25 C
0 --0.5 --1.0 --1.5 --2.0 --2.5
Drain Current, ID - A
Drain Current, ID - A
75 C
--2.0
--1.5
--1.0
--0.5
0 2.0 2.5 3.0 3.5 IT01075 --3.0 --3.5 --4.0
Gate-to-Source Voltage, VGS - V
500
Gate-to-Source Voltage, VGS - V
1000
75 C
2 5 C
IT00781
RDS(on) -- VGS
[Nch] Ta=25C Static Drain-to-Source On-State Resistance, RDS(on) - m
900 800 700 600 500 400 300 200 100 0 0 --1 --2
RDS(on) -- VGS
[Pch] Ta=25C
Static Drain-to-Source On-State Resistance, RDS(on) - m
450 400 350 300 250 200 150 100 50 0 0 1 2 3 4 5 6 7 8 9 10
ID=--0.3A --0.5A
ID=400mA
700mA
--3
--4
--5
--6
--7
--8
--9
--10
Gate-to-Source Voltage, VGS - V
400
IT01076
Gate-to-Source Voltage, VGS - V
1000
IT00782
RDS(on) -- Ta
V =2.5 , VGS
[Nch] Static Drain-to-Source On-State Resistance, RDS(on) - m
900 800 700 600 500 400 300 200 100 0 --60 --40 --20 0
RDS(on) -- Ta
[Pch]
Static Drain-to-Source On-State Resistance, RDS(on) - m
350 300 250 200 150 100 50 0 --60
40 I D=
0mA
70 I D=
, VG 0mA
4.0 S=
V
.5V =--2 , VGS A --0.3 I D= 0V =--4. , VGS -0.5A I D=-
--40
--20
0
20
40
60
80
100
120
140
160
20
40
60
80
100
120
140
160
Ambient Temperature, Ta - C
IT01077
Ambient Temperature, Ta - C
IT00783
No.6441-3/6
CPH5605
10
yfs -- ID
[Nch]
Forward Transfer Admittance, | yfs | - S
10 7 5 3 2
yfs -- ID
[Pch] VDS=--10V
Forward Transfer Admittance, | yfs | - S
7 5 3 2
VDS=10V
Ta
1.0 7 5 3 2 0.1 0.01
C 25 =-C
C 25
1.0 7 5 3 2 0.1 --0.01
75
Ta
C 25 =-75 C
25
C
2
3
5 7 0.1
2
3
5 7 1.0
2
3
Drain Current, ID - A
10 7 5 3 2
5 7 10 IT01078
2
3
5 7 --0.1
2
3
5 7 --1.0
2
3
5 7 --10 IT00784
Drain Current, ID - A
--10 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 --0.01
IF -- VSD
[Nch] VGS = 0
IF -- VSD
[Pch] VGS = 0
Forward Current, IF - A
1.0 7 5 3 2 0.1 7 5 3 2 0.01 7 5 3 2 0.001 0 0.3
Ta=7 5 25C C --25 C
Forward Current, IF - A
0.6
0.9
1.2
1.5 IT01079
0
--0.2
--0.4
Ta=75
C 25C --25C
--0.6 --0.8
--1.0
--1.2
--1.4
Diode Forward Voltage, VSD - V
1000 7 5
Diode Forward Voltage, VSD - V
1000 7 5
IT00785
SW Time -- ID
[Nch] VDD=10V VGS=4V
Switching Time, SW Time - ns
SW Time -- ID
[Pch] VDD=--10V VGS=--4V
Switching Time, SW Time - ns
3 2 100 7 5 3 2 10 7 5 3 2 1.0 0.1 2 3 5 7 2 3 5 7 10 IT01080
3 2 100 7 5 3 2 10 7 5 3 2 1.0 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 IT00786
tr
tr
tf td(on)
td ( o ff)
td(off)
tf
td(on)
1.0
Drain Current, ID - A
1000 7 5
Drain Current, ID - A
1000 7 5
Ciss, Coss, Crss -- VDS
[Nch] f=1MHz
Ciss, Coss, Crss -- VDS
[Pch] f=1MHz
Ciss, Coss, Crss -- pF
Ciss, Coss, Crss -- pF
3 2
3 2
100 7 5 3 2
Ciss Coss Crss
100 7 5 3 2
Ciss Coss
Crss
10 0 2 4 6 8 10 12 14 16 18 20
10 0 --2 --4 --6 --8 --10 --12 --14 --16 --18 --20
Drain-to-Source Voltage, VDS - V
IT01081
Drain-to-Source Voltage, VDS - V
IT00787
No.6441-4/6
CPH5605
10 9
VGS -- Qg
VDS=10V ID=1.4A
[Nch]
--10 --9
VGS -- Qg
VDS=--10V ID=--1A
[Pch]
Gate-to-Source Voltage, VGS - V
Gate-to-Source Voltage, VGS - V
2 3 4 5 6 IT01082
8 7 6 5 4 3 2 1 0 0 1
--8 --7 --6 --5 --4 --3 --2 --1 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Total Gate Charge, Qg - nC
10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01 0.1
Total Gate Charge, Qg - nC
--10 7 5 3 2
IT00788
ASO
IDP=5.6A
1m s
[Nch] 100s
ASO
IDP=--4A
1m
[Pch] 100s
Drain Current, ID - A
Drain Current, ID - A
ID=1.4A
10
ms
10
ID=--1A
DC op
ms
s
10
DC
0m
--1.0 7 5 3 2 --0.1 7 5 3 2
s
10 0m s
era tio n
Operation in this area is limited by RDS(on).
op
era
tio
n
Operation in this area is limited by RDS(on).
Mounted on a ceramic board (600mm2x0.8mm)
2 3 5 7 1.0 2 3 5 7 10 2 3 5
Ta=25C Single pulse 1 unit
--0.01 --0.1
Mounted on a ceramic board (600mm2x0.8mm)
2 3 5 7 --1.0 2 3 5 7 --10 2 3 5
Ta=25C Single pulse 1 unit
Drain-to-Source Voltage, VDS - V
1.2
IT01083
Drain-to-Source Voltage, VDS - V
IT00790
PD -- Ta
[Nch, Pch]
Allowable Power Dissipation, PD - W
1.0 0.9 0.8
M
ou
nte
do
na
ce
0.6
ram
ic
bo
ard
0.4
(6
00
mm
2
x0
0.2
.8m
m)
1u
nit
160
0 0 20 40 60 80 100 120 140
Ambient Temperature, Ta - C
IT01084
No.6441-5/6
CPH5605
Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties.
This catalog provides information as of March, 2000. Specifications and information herein are subject to change without notice.
PS No.6441-6/6

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