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| 2SK2494-01 F-I Series > Features High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance N-channel MOS-FET 60V 0,025 45A 80W > Outline Drawing > Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters > Maximum Ratings and Characteristics - Absolute Maximum Ratings (TC=25C), unless otherwise specified Item Drain-Source-Voltage Drain-Gate-Voltage (RGS=20K) Continous Drain Current Pulsed Drain Current Gate-Source-Voltage Max. Power Dissipation Operating and Storage Temperature Range Symbol V DS V DGR ID I D(puls) V GS PD T ch T stg Rating 60 60 45 200 30 80 150 -55 ~ +150 Unit V V A A V W C C > Equivalent Circuit - Electrical Characteristics (TC=25C), unless otherwise specified Item Drain-Source Breakdown-Voltage Gate Threshhold Voltage Zero Gate Voltage Drain Current Gate Source Leakage Current Drain Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On-Time ton (ton=td(on)+tr) Turn-Off-Time toff (ton=td(off)+tf) Avalanche capability Diode Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge Symbol V (BR)DSS V GS(th) I DSS I R g C C C t t t t I V t Q GSS DS(on) fs iss oss rss d(on) r d(off) f AV SD rr rr Test conditions ID=1mA VGS=0V ID=10mA VDS=VGS VDS=60V Tch=25C VGS=0V Tch=125C VGS=30V VDS=0V ID=25A VGS=10V ID=25A VDS=25V VDS=25V VGS=0V f=1MHz VCC=30V ID=45A VGS=10V RGS=25 Tch=25C L=100H IF=2xIDR VGS=0V Tch=25C IF=IDR VGS=0V -dIF/dt=100A/s Tch=25C Min. 60 2,5 Typ. 3,0 10 0,2 10 0,017 22 2000 800 300 25 150 140 125 1,30 60 0,1 Max. 3,5 500 1,0 100 0,025 3000 1200 450 40 230 210 190 1,95 11 45 Unit V V A mA nA S pF pF pF ns ns ns ns A V ns C - Thermal Characteristics Item Thermal Resistance Symbol R th(ch-a) R th(ch-c) Test conditions channel to air channel to case Min. Typ. Max. 75 1,56 Unit C/W C/W N-channel MOS-FET 60V 0,025 45A 2SK2494-01 F-I Series Drain-Source On-State Resistance RDS(on) = f(Tch); ID=25A; VGS=10V 80W > Characteristics Typical Output Characteristics ID=f(VDS); 80s pulse test; TC=25C Typical Transfer Characteristics ID=f(VGS); 80s pulse test; VDS=25V; Tch=25C ID [A] 1 RDS(ON) [] 2 ID [A] 3 VDS [V] Tch [C] VGS [V] Typical Drain-Source On-State-Resistance RDS(on)=f(ID); 80s pulse test; TC=25C Typical Transconductance gfs=f(ID); 80s pulse test; VDS=25V; Tch=25C Gate Threshold Voltage VGS(th)=f(Tch); ID=10mA; VDS=VGS RDS(ON) [] gfs [S] 5 VGS(th) [V] 4 6 ID [A] ID [A] Tch [C] Typical Capacitances C=f(VDS); VGS=0V; f=1MHz Typical Gate Charge Characteristics VGS=f(Qg); ID=45A Forward Characteristics of Reverse Diode IF=f(VSD); 80s pulse test; VGS=0V C [pF] VDS [V] VGS [V] IF [A] 7 8 9 VDS [V] Qg [nC] VSD [V] Power Dissipation PD=f(Tc) Safe Operation Area ID=f(VDS): D=0,01, Tc=25C Zth(ch-c) [K/W] Transient Thermal impedance Zthch-c=f(t) parameter:D=t/T PD[W] 10 ID [A] 12 Tch [C] VDS [V] t [s] Collmer Semiconductor - P.O. Box 702708 - Dallas TX - 75370 - 972.233.1589 - 972.233.0481 Fax - www.collmer.com - 11/98 |
Price & Availability of 2SK2494-01
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