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| 4AM15 Silicon N Channel/P Channel Power MOS FET Array Application High speed power switching SP-12TA Features 1 * Low on-resistance N Channel : RDS(on) 0.5, VGS = 10V , ID = 2A P Channel : RDS(on) 0.9, VGS = -10V , ID = -2A * Low drive current * High speed switching * High density mounting * Suitable for H-bridged motor driver 1, 5, 8, 12 ; Gate 2, 4, 9, 11 ; Drain 3, 6, 7, 10 ; Source 12 Nch 2 1 5 4 Pch 9 8 12 11 3 6 7 10 Table 1 Absolute Maximum Ratings (Ta = 25C) Ratings -------------- Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Symbol VDSS VGSS ID ID(pulse)* IDR Pch** (Tc = 25 C) Pch** Channel temperature Storage temperature Tch Tstg Nch 200 20 4 16 4 32 Pch -200 20 -4 -16 -4 Unit V V A A A W -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- ------------------------------------------------ 4.0 150 -55 to +150 W C C -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- * PW 10 s, duty cycle 1 % ** 4 Device Operation 4AM15 Table 2 Electrical Characteristics (Ta = 25C) N Channel -------------------- Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr Min 200 Typ -- Max -- Unit V Test conditions ID = 10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 16 V, VDS = 0 VDS = 160 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 2 A, VGS = 10 V * ID = 2 A VDS = 10 V * VDS = 10 V VGS = 0 f = 1 MHz ID = 2 A VGS = 10 V RL = 15 -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- 20 -- -- V -------------------------------------------------------------------------------------- -- -- 2.0 -- -- -- -- 0.33 10 250 4.0 0.5 A A V -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- 1.5 2.5 -- S -------------------------------------------------------------------------------------- Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time * Pulse Test s See characteristic curve of 2SK1957 and 2SJ410 -- -- -- -- -- -- -- -- 750 260 40 19 26 45 24 1.0 -- -- -- -- -- -- -- -- pF pF pF ns ns ns ns V IF = 4 A, VGS = 0 IF =4 A, VGS = 0, diF / dt = 100 A / s ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -- 125 -- ns -------------------------------------------------------------------------------------- 4AM15 Table 3 Electrical Characteristics (Ta = 25C) P Channel -------------------- Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr Min -200 Typ -- Max -- Unit V Test conditions ID = -10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 16 V, VDS = 0 VDS = -160 V, VGS = 0 ID = -1 mA, VDS = -10 V -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- 20 -- -- V -------------------------------------------------------------------------------------- -- -- -2.0 -- -- -- -- 0.7 10 -250 -4.0 0.9 A A V -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- ID = -2 A, VGS = -10 V * ID = -2 A VDS = -10 V * VDS = -10 V VGS = 0 f = 1 MHz ID = -2 A VGS = -10 V RL = 15 -------------------------------------------------------------------------------------- 2.0 3.0 -- S -------------------------------------------------------------------------------------- Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time * Pulse Test -- -- -- -- -- -- -- -- 920 290 70 17 40 85 45 -1.0 -- -- -- -- -- -- -- -- pF pF pF ns ns ns ns V IF = -4 A, VGS = 0 IF =-4 A, VGS = 0, diF / dt = 100 A / s ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -- 170 -- ns -------------------------------------------------------------------------------------- 4AM15 Maximum Channel Dissipation Curve 6 Channel Dissipation Pch (W) Channel Dissipation Pch (W) Condition : Channel Dissipation of each die is identical 4 Device Operation 3 Device Operation 2 Device Operation 1 Device Operation 48 Maximum Channel Dissipation Curve Condition : Channel Dissipation of each die is identical 4 Device Operation 3 Device Operation 2 Device Operation 1 Device Operation 4 32 2 16 0 50 100 150 0 50 100 150 Ambient Temperature Ta (C) Case Temperature Tc (C) |
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