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| 4AM17 Silicon N/P Channel MOS FET High Speed Power Switching ADE-208-729 (Z) 1st. Edition January 1999 Features * Low on-resistance N Channel : RDS(on) 0.17, VGS = 10V, ID = 4A P Channel : RDS(on) 0.2, VGS = -10V, ID = -4A * 4V gate drive devices. * High density mounting Outline 4AM17 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Nch Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel dissipation Channel temperature Storage temperature Note: 1. PW 10s, duty cycle 1 % 2. 4 devices operation VDSS VGSS ID I D(pulse) I DR Pch (Tc=25C) Pch Tch Tstg Note2 Note2 Note1 Unit Pch -60 20 -8 -32 -8 28 4.0 150 V V A A A W W C C 60 20 8 32 8 -55 to +150 2 4AM17 Electrical Characteristics (Ta = 25C) ( N Channel ) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Gate series resistance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Note: 3. Pulse test Symbol V(BR)DSS V(BR)GSS I GSS I DSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss Rg t d(on) tr t d(off) tf VDF t rr Min 60 20 -- -- 1.0 -- -- 3.5 -- -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 0.13 0.19 5.5 33 220 5.2 1.5 0.15 0.5 3.2 1.4 1.5 850 Max -- -- 10 250 2.5 0.17 0.24 -- -- -- -- -- -- -- -- -- -- -- Unit V V A A V S pF pF pF k s s s s V ns I F =8A, VGS = 0 I F =8A, VGS = 0 diF/ dt =50A/s Test Conditions I D = 10mA, VGS = 0 I G = 100A, VDS = 0 VGS = 16V, VDS = 0 VDS = 50V, VGS = 0 VDS = 10V, I D = 1mA I D = 4A, VGS = 10V Note3 I D = 4A, VGS = 4V Note3 I D = 4A, VDS = 10V Note3 VDS = 10V VGS = 0 f = 1MHz VDS = 10V, VGS = 0 f = 1MHz VGS =10V, ID = 4A RL = 7.5 3 4AM17 ( P Channel ) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Gate series resistance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Note: 3. Pulse test Symbol V(BR)DSS V(BR)GSS I GSS I DSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss Rg t d(on) tr t d(off) tf VDF t rr Min -60 20 -- -- -1.0 -- -- 3.5 -- -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 0.15 0.2 6.0 17 460 1.2 3.2 0.6 2.1 12 5.8 -1.2 2.5 Max -- -- 10 -250 -2.5 0.2 0.27 -- -- -- -- -- -- -- -- -- -- -- Unit V V A A V S pF pF pF k s s s s V ns I F =-8A, VGS = 0 I F =-8A, VGS = 0 diF/ dt =50A/s Test Conditions I D = -10mA, VGS = 0 I G = 100A, VDS = 0 VGS = 16V, VDS = 0 VDS = -50V, VGS = 0 VDS = -10V, I D = -1mA I D = -4A, VGS = -10V Note3 I D = -4A, VGS = -4V Note3 I D = -4A, VDS = -10V Note3 VDS = -10V VGS = 0 f = 1MHz VDS = 0, VGS = 0 f = 1MHz VGS = -10V, ID = -4A RL = 7.5 4 4AM17 Main Characteristics 5 4AM17 Package Dimensions Unit: mm 6 4AM17 Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products. 7 |
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