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| BUV50 HIGH POWER NPN SILICON TRANSISTOR s s s s s SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR HIGH CURRENT CAPABILITY FAST SWITCHING SPEED FULLY CHARACTERISED AT 125oC APPLICATION SWITCHING REGULATORS s MOTOR CONTROL s 1 2 TO-3 DESCRIPTION The BUV50 is a Multiepitaxial planar NPN transistor in TO-3 metal case. It's intented for use in high frequency and efficiency converters such us motor controllers and industrial equipment. INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CEV V CEO V EBO IC I CM IB I BM P Base P t ot T stg Tj Parameter Collector-Emitter Voltage (V BE = -1.5V) Collector-Emitter Voltage (I B = 0) Emitt er-Base Voltage (IC = 0) Collector Current Collector Peak Current Base Current Base Peak Current Reverse Bias Base Power Dissipation (B.E. junction in avalance) Total Power Dissipation at T case 25 o C Storage T emperature Max Operating Junction T emperature Value 250 125 7 25 50 6 12 2 150 -65 to 200 150 Unit V V V A A A A W W o o C C April 1997 1/5 BUV50 THERMAL DATA R t hj-ca se Thermal Resistance Junction-case Max 1.17 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CER I CEV I EBO V CEO(sus ) V EB0 Parameter Collector Cut-off Current (R BE = 10) Collector Cut-off Current Emitter Cut-off Current (IC = 0) Collector-Emitter Sustaining Voltage Emitter-base Voltage (Ic = 0) Test Cond ition s V CE = V CEV V CE = V CEV V CE = V CEV V CE = V CEV V EB = 5 V I C = 0.2A L = 25 mH I E = 50 mA IC IC IC IC IC IC IC IC IC IC = = = = = = = = = = 10A 20A 24A 10A 20A 24A 20A 24A 20A 24A IB IB IB IB IB IB IB IB IB IB = = = = = = = = = = 0.5A 2A 3A 0.5A 2A 3A 2A 3A 2A 3A 125 7 0.4 0.6 0.7 0.5 0.75 0.9 1.25 1.35 1.25 1.45 50 45 100 85 1.4 2.1 3 4 0.8 0.9 1.2 0.9 1.5 1.8 1.6 1.7 1.7 1.9 T c = 100 C V BE = - 1.5V o V BE = - 1.5V T C=100 C o Min. Typ . Max. 1 5 1 5 1 Un it mA mA mA mA mA V V V V V V V V V V V V A/s A/s V V V CE(sat ) Collector-Emitter Saturation Voltage Tj = 100 o C o T j = 100 C T j = 100 oC V BE(s at) Base-Emitter Saturation Voltage Rate of Rise of on-st ate Collect or Current Collector-Emitter Dynamic Voltage T j = 100 C o T j = 100 C R C =0 T j = 25o C o T j = 100 C R C =5 o T j = 25 C T j = 100 o C R C = 5 T j = 25o C o T j = 100 C o dic /dt V CC = 100V I B1 = 3A V CC = 100V I B1 = 2A V CE(2 s) VCC = 100V I B1 = 2A V CE(4 s) Collector-Emitter Dynamic Voltage 1.1 1.5 2 2.5 V V Pulsed: Pulse duration = 300 s, duty cycle = 2 % 2/5 BUV50 ELECTRICAL CHARACTERISTICS (continued) TURN-OFF SWITCHING CHARACTERISTICS On Inductive Load (with negative bias) Symbol t si T j = 25 C T j = 100 C t fi T j = 25 C T j = 100 C t ti T j = 25 C T j = 100 C tc T j = 25 C T j = 100 oC o o o o o o o T est Con ditio ns Min. Typ. 0.85 Max. 1.4 1.7 0.2 0.3 0.05 0.1 0.3 0.5 Un it I C = 20A IB = 2A V CC = 100V L C = 0.25 mH VBB = - 5V V CLAMP = 125V R B2 = 1.3 1.2 0.09 0.17 0.04 0.07 0.16 0.3 s TURN-OFF SWITCHING CHARACTERISTICS On Inductive Load (without negative bias) Symbol t si T j = 25 C T j = 100 C t fi t ti T j = 25 C T j = 100 oC T j = 25 oC o o o o T est Con ditio ns I C = 20A V CC = 100V L C = 0.25 mH IB = 2A VBB = 0 V CLAMP = 125V R B2 = 4.7 Min. Typ. 2.1 3.2 0.7 1.2 0.28 0.55 Max. Un it s T j = 100 C *Pulsed : Duration = 300ms, Duty Cycle = 2 % Figure 1 : Switching Times Test Circuit (resistive load) (1) Fast-switching (2) Non-Inductive resistor 3/5 BUV50 TO-3 MECHANICAL DATA mm MIN. A B C D E G N P R U V 11.00 0.97 1.50 8.32 19.00 10.70 16.50 25.00 4.00 38.50 30.00 TYP. MAX. 13.10 1.15 1.65 8.92 20.00 11.10 17.20 26.00 4.09 39.30 30.30 MIN. 0.433 0.038 0.059 0.327 0.748 0.421 0.649 0.984 0.157 1.515 1.187 inch TYP. MAX. 0.516 0.045 0.065 0.351 0.787 0.437 0.677 1.023 0.161 1.547 1.193 DIM. P G A D C U V O N R B P003F 4/5 E BUV50 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. (c) 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada- China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A . .. 5/5 |
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