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MITSUBISHI IGBT MODULES
CM50MD-12H
MEDIUM POWER SWITCHING USE INSULATED TYPE
CM50MD-12H
IC ..................................................................... 50A VCES ............................................................ 600V Insulated Type CIB Module 3 Inverter+3 Converter+Brake UL Recognized Yellow Card No. E80276 (N) File No. E80271
APPLICATION AC & DC motor controls, General purpose inverters, Servo controls, NC, Robotics
OUTLINE DRAWING & CIRCUIT DIAGRAM
P P1 GU 2.54 2.54 2.54 2.54
2.54 2.54 2.54
Dimensions in mm
GV EV
GW EW
R S T
B
EU
GB
GV GW E
GU
GV
GW E
8
15
15
17.2
EU GU
10.16 10.16 10.16
N
U
V CIRCUIT DIAGRAM
W
EV GV
EW
GU
GW GB
60
R
S
T
B
U
V
W
13 12.5 12.5 15 5
15 12.5 12.5
2 - R5.5
29 0.25
2 - 4.5 MOUNTING HOLES
58
29 0.25
P
P1
N
GE
GE
G E GB G G G E
9
4 2 t = 0.6 0.6 t = 0.6
105 0.25 115
6.3
45
12
LABEL
MAIN CIRCUIT TERMINAL
CONTROL CIRCUIT TERMINAL
Feb.1999
MITSUBISHI IGBT MODULES
CM50MD-12H
MEDIUM POWER SWITCHING USE INSULATED TYPE
MAXIMUM RATINGS INVERTER PART
Symbol VCES VGES IC ICM IE (Note. 1) IEM (Note. 1) PC (Note. 3)
(Tj = 25C)
Parameter Collector-emitter voltage Gate-emitter voltage Collector Current Emitter Current Maximum collector dissipation G - E Short C - E Short TC = 25C PULSE TC = 25C PULSE Tf = 25C
Condition
(Note. 2)
(Note. 2)
Rating 600 20 50 100 50 100 104
Unit V V A A A A W
BRAKE PART
Symbol VCES VGES IC ICM PC (Note. 3) VRRM IFM (Note. 3) Parameter Collector-emitter voltage Gate-emitter voltage Collector Current Maximum Collector dissipation Repetitive peak reverse voltage Forward current G - E Short C - E Short TC = 25C PULSE Tf = 25C Clamp diode part Clamp diode part Condition Rating 600 20 50 100 104 600 50 Unit V V A A W V A
(Note. 2)
CONVERTER PART
Symbol VRRM Ea IO IFSM I2t Parameter Repetitive peak reverse voltage Recommended AC input voltage DC output current Surge (non-repetitive) forward current I2t for fusing Condition Rating 800 220 50 500 1.0!103 Unit V V A A A 2s
3 rectifying circuit 1 cycle at 60Hz, peak value Non-repetitive Value for one cycle of surge current
COMMON RATING
Symbol Tj Tstg Viso -- -- Parameter Junction temperature Storage temperature Isolation voltage Mounting torque Weight Condition Rating -40 ~ +150 -40 ~ +125 2500 0.98 ~1.47 100 Unit C C V N.m g
AC 1 min. Mounting M4 screw Typical value
Feb.1999
MITSUBISHI IGBT MODULES
CM50MD-12H
MEDIUM POWER SWITCHING USE INSULATED TYPE
ELECTRICAL CHARACTERISTICS INVERTER PART
Symbol ICES Parameter
(Tj = 25C)
Test conditions VCE = VCES, VGE = 0V IC = 5.0mA, VCE = 10V VGE = VGES, VCE = 0V Tj = 25C IC = 50A, VGE = 15V Tj = 150C VCE = 10V VGE = 0V VCC = 300V, IC = 50A, VGE = 15V VCC = 300V, IC = 50A VGE1 = VGE2 = 15V RG = 13 Resistive load IE = 50A, VGE = 0V IE = 50A, VGE = 0V die / dt = - 100A / s IGBT part, Per 1/6 module FWDi part, Per 1/6 module
Collector cutoff current Gate-emitter VGE(th) threshold voltage Gate-emitter cutoff current IGES Collector-emitter VCE(sat) saturation voltage Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres Total gate charge QG Turn-on delay time td (on) Turn-on rise time tr td (off) Turn-off delay time tf Turn-off fall time VEC (Note. 1) Emitter-collector voltage trr (Note. 1) Reverse recovery time Qrr (Note. 1) Reverse recovery charge Rth(j-f)Q (Note. 5) Thermal resistance Rth(j-f)R (Note. 5)
Min. -- 4.5 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- --
Limits Typ. -- 6 -- 2.2 -- -- -- -- 150 -- -- -- -- -- -- 0.14 -- --
Max. 1 7.5 0.5 2.8 -- 5.0 3.8 1.0 -- 120 300 200 300 2.8 110 -- 1.2 1.9
Unit mA V A V nF nF nF nC ns ns ns ns V ns C C/W C/W
(Note. 4)
BRAKE PART
Symbol ICES VGE(th) IGES VCE(sat) Parameter Collector cutoff current Gate-emitter threshold voltage Gate-emitter cutoff current Collector-to-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Forward voltage drop VCE = VCES, VGE = 0V IC = 5.0mA, VCE = 10V VGE = VGES, VCE = 0V Tj = 25C IC = 50A, VGE = 15V Tj = 150C VCE = 10V VGE = 0V VCC = 300V, IC = 50A, VGE = 15V IF = 50A, Clamp diode part IGBT part Clamp diode part Condition Min. -- 4.5 -- -- -- -- -- -- -- -- -- -- Limits Typ. -- 6 -- 2.2 -- -- -- -- 150 -- -- -- Max. 1 7.5 0.5 2.8 -- 5.0 3.8 1.0 -- 1.5 1.2 1.7 Unit mA V A V nF nF nF nC V C/W C/W
(Note. 4)
Cies Coes Cres QG VFM Rth(j-f)Q (Note. 5) Thermal resistance Rth(j-f)R (Note. 5)
CONVERTER PART
Symbol Parameter VR = VRRM, Tj = 150C IF = 50A Per 1/6 module Condition Min. -- -- -- Limits Typ. -- -- -- Max. 8 1.5 1.7 Unit mA V C/W
Repetitive reverse current IRRM Forward voltage drop VFM Rth(j-f) (Note. 5) Thermal resistance
Note 1. 2. 3. 4. 5.
IE, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode. Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating. Junction temperature (Tj) should not increase beyond 150C. Pulse width and repetition rate should be such as to cause negligible temperature rise. Thermal resistance is specified under following conditions. * The conductive greese applied, between module and fin. * Al plate is used as fin.
Feb.1999
MITSUBISHI IGBT MODULES
CM50MD-12H
MEDIUM POWER SWITCHING USE INSULATED TYPE
PERFORMANCE CURVES
OUTPUT CHARACTERISTICS (TYPICAL) 100 VGE = 20 (V) Tj=25C 11 50 10 25 9 87 0 0 1 2 3 4 5 6 7 8 9 10 15 100 12 TRANSFER CHARACTERISTICS (TYPICAL) VCE = 10V
COLLECTOR CURRENT IC (A)
75
COLLECTOR CURRENT IC (A)
75
50
25 Tj = 25C Tj = 125C 0 0 2 4 6 8 10 12 14 16 18 20
COLLECTOR-EMITTER VOLTAGE VCE (V)
GATE-EMITTER VOLTAGE VGE (V)
COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 5 10
COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V)
COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V)
4
VGE = 15V Tj = 25C Tj = 125C
9 8 7 6 5 4 3 2 1 0 0
Tj = 25C
3
IC = 100A IC = 50A
2
1
IC = 20A 2 4 6 8 10 12 14 16 18 20
0
0
25
50
75
100
COLLECTOR CURRENT IC (A)
GATE-EMITTER VOLTAGE VGE (V)
FREE-WHEEL DIODE FORWARD CHARACTERISITICS (TYPICAL)
3 2
CAPACITANCE VS. VCE (TYPICAL) 101
CAPACITANCE Cies, Coes, Cres (nF)
Tj = 25C
EMITTER CURRENT IE (A)
7 5 3 2
VGE = 0V
102
7 5 3 2
Cies Coes
100
7 5 3 2
101
7 5 3
Cres
0
0.8
1.6
2.4
3.2
4.0
10-1
3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3
EMITTER-COLLECTOR VOLTAGE VEC (V)
COLLECTOR-EMITTER VOLTAGE VCE (V)
Feb.1999
MITSUBISHI IGBT MODULES
CM50MD-12H
MEDIUM POWER SWITCHING USE INSULATED TYPE
HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 103
7 5
SWITCHING TIMES (ns)
tf td(off)
5 3 2
5 3 2
3 2
Irr
102
7 5
102
7 5 3 2
td(on) tr
trr
100
7 5 3 2
VCC = 300V VGE = 15V 2 RG = 13 Tj = 125C 1 10 0 10 23 5 7 101
3
2
3
5 7 102
101 0 10
2
3
5 7 101
2
3
5 7 102
10-1
COLLECTOR CURRENT IC (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part) 10-3 2 3 5 710-2 2 3 5 710-1 2 3 5 7 100 2 3 5 7 101 101 7 Single Pulse 5 3 Tf = 25C
2 7 5 3 2 7 5 3 2 7 5 3 2
EMITTER CURRENT IE (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi part) 10-3 2 3 5 710-2 2 3 5 710-1 2 3 5 7 100 2 3 5 7 101 101 7 Single Pulse 5 3 Tf = 25C
2 7 5 3 2 7 5 3 2 7 5 3 2
NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j - f)
100
Rth(j - f) = 1.2C/ W
3 2
NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j - f)
100
Rth(j - f) = 1.9C/ W
3 2
10-1
10-1
7 5 3 2 7 5 3 2
10-1
10-1
7 5 3 2 7 5 3 2
10-2
10-2
10-2
10-2
10-3
10-3 10-5 2 3 5 710-4 2 3 5 7 10-3 TIME (s)
10-3
10-3 10-5 2 3 5 710-4 2 3 5 7 10-3 TIME (s)
VGE - GATE CHARGE (TYPICAL) 20
GATE-EMITTER VOLTAGE VGE (V)
18 16 14 12 10 8 6 4 2 0 0
IC = 50A
VCC = 200V VCC = 300V
50
100
150
200
250
GATE CHARGE QG (nC)
Feb.1999
REVERSE RECOVERY CURRENT lrr (A)
REVERSE RECOVERY TIME trr (ns)
REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 103 101 - di/dt = 100A / s 7 7 Tj = 25C

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