View SE2425U-R_954481.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

SE2425U
RangeChargerTM 2.4 GHz Bluetooth Power Amplifier IC Preliminary Information
Applications
Bluetoothtm wireless technology (Class 1) USB dongles, PCMCIA, flash cards, Access Points Enhanced data rate
Product Description
A monolithic, high-efficiency, silicon-germanium power amplifier IC, the SE2425U is designed for 2.4 GHz wireless applications, including BluetoothTM Class 1 basic rate and enhanced data rate applications. It delivers +25 dBm output power in standard rate GFSK mode and +19.5 dBm output power in enhanced rate 8DPSK. The SE2425U provides a digital mode control input for boosting the linear performance for enhanced data rate applications. The SE2425U operates at 3.3 V DC with a peak efficiency of 43 % in basic rate and 21 % in enhanced rate mode. The internal bias management allows the part to only draw 28 mA in Class 2 output power levels. Output match integrates the high Q inductors to reduce component count and bill of materials. It uses two external capacitors to allow for varying loads, such as switches and filters, in different applications. The silicon/silicon-germanium structure of the SE2425U, and its exposed die-pad package, soldered to the system PCB, provide high thermal conductivity and a subsequently low junction temperature. This device is capable of operating at a duty cycle of 100 percent.
Features
Integrated input and inter-stage match +25 dBm GFSK Output Power +19.5 dBm 8DPSK Output Power Low current: 110 mA typical @ POUT = +20 dBm Ultra low quiescent current: 28 mA Digital Enable for direct interface to standard CMOS processors Mode-control for easy switching between standard and EDR modes Gain: 29 dB 3.3 V single supply operation
Ordering Information
Type SE2425U SE2425U-R SE2425U-EK1 Package 3 x 3 x 0.5 mm QFN 3 x 3 x 0.5 mm QFN N/A Remark Sample Tape & Reel Evaluation Kit
Functional Block Diagram
EN (4) MODE (5) VCC0 (2) VCC1 ( 16 ) VCC2 ( 15 ) VCC3 ( 14 )
Digital Bias & Enable Logic
RF IN (1)
Input Match
InterStage Match
InterStage Match
RF OUT (7)
SiGe SE2425U
GND ( Paddle )
Figure 1: SE2425U Block Diagram
165-DST-01
Rev 1.3
Apr-05-2006
Confidential
QA040506
1 of 10
SE2425U
RangeChargerTM 2.4 GHz Bluetooth Power Amplifier IC Preliminary Information
Pin-Out Diagram
SE2425U Top View
VCC1 VCC2 VCC3 14 N/C 13 12 11 10 GND Pad EN 4 5 6 7 8 9 N/C
16 1 2 3
15
RFIN VCC0 N/C
N/C N/C CAP
N/C
MODE
Figure 2: SE2425U Pin-Out
Pin Out Description
Pin No. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 GND Pad Name RFIN VCCO N/C EN MODE N/C RFOUT N/C N/C CAP N/C N/C N/C VCC3 VCC2 VCC1 GND Description Power amplifier RF input, DC blocking is required Bias Power Supply Do Not Connect PA Enable Mode switch Do Not Connect RF output Note: Requires external DC blocking and optional shunt capacitor (typically 0p75 0402) Do Not Connect Do Not Connect Matching capacitor (typically 1p3 0402) Do Not Connect Do Not Connect Do Not Connect Stage 3 collector supply voltage Stage 2 collector supply voltage Stage 1 collector supply voltage Heat slug Ground Pad
165-DST-01
Rev 1.3
Apr-05-2006
Confidential
QA040506
RFOUT
N/C
2 of 10
SE2425U
RangeChargerTM 2.4 GHz Bluetooth Power Amplifier IC Preliminary Information
Absolute Maximum Ratings
Operation in excess of any one of above Absolute Maximum Ratings may result in permanent damage. This device is ESD sensitive. Handling and assembly of this device should be at ESD protected workstations.
Symbol VCC VEN IN TC TSTG Tj Supply Voltage Enable Voltage RF Input Power
Parameter
Min. -0.3 -0.3 -40 -40 -
Max. +4.2 VCC 0 +85 +150 +150
Unit V V dBm C C C
Case Temperature Range Storage Temperature Range Maximum Junction Temperature
DC Electrical Characteristics
Conditions: Symbol VCC Supply Voltage Supply Current VMODE = Low, POUT = 20 dBm ICC Supply Current VMODE = Low, No RF Supply Current VMODE = High, No RF Supply Current VMODE = High, POUT = 19.5 dBm IEN IMODE VLOGIC Istdby Current sunk by EN pin (logic high) Current sunk by MODE pin (logic high) Logic High Voltage Logic Low Voltage Leakage Current when VEN = VMODE = 0 V, No RF VCC0 = VCC1 = VCC2 = VCC3 = 3.3 V, TC = 25 C, f = 2.45 GHz, as measured on SiGe Semiconductor's SE2425U-EV1 evaluation board unless otherwise noted. Parameter Min. 2.7 2.0 0 Typ. 3.3 110 28 81 123 2.8 1 Max. 3.6 1 1 3.3 0.8 10 Unit V mA mA mA mA A A V V A
165-DST-01
Rev 1.3
Apr-05-2006
Confidential
QA040506
3 of 10
SE2425U
RangeChargerTM 2.4 GHz Bluetooth Power Amplifier IC Preliminary Information
AC Electrical Characteristics
Conditions: VEN = VCC0 = VCC1 = VCC2 = VCC3 = 3.3 V, VMODE = Low, PIN = -6 dBm, TC = 25 C, f = 2.45 GHz, as measured on SiGe Semiconductor's SE2425U-EV1 evaluation board, unless otherwise noted Standard Rate Mode Symbol fL-U POUT_MAX Ptemp G GVAR 2f 3f IS11I IS21IOFF IS12I STAB Frequency Range Maximum Output Power (PIN = 0 dBm) Output Power variation over temperature (-40 C < TA <+85 C) Gain @ PIN = -25 dBm Gain @ PIN = -6 dBm Gain Variation over band (2400-2500 MHz) Harmonics Isolation in "OFF" State, VEN = 0 V Reverse Isolation Stability (PIN = -6 dBm, Load VSWR = 4:1) Parameter Min. 2400 10 Typ. 25 0.5 29.5 28.5 0.1 -40 -41 36 42 Max. 2500 1.0 Unit MHz dBm dB dB dB dBc dB dB dB
All non-harmonically related outputs less than -50 dBc
Conditions:
VEN = VCC0 = VCC1 = VCC2 = VCC3 = 3.3 V, VMODE = High, TC = 25 C, f = 2.45 GHz, as measured on SiGe Semiconductor's SE2425U-EV1 evaluation board, unless otherwise noted. Enhanced Rate Mode
Symbol POUT_MAX Ptemp G GVAR ACPR1
Parameter Output Power (Meets ACPR1/2 specification) Output Power variation over temperature (-40 C < TA < +85 C) for PIN=-15 dBm Gain @ PIN = -25 dBm Gain Variation over band, PIN = -25 dBm 2 Mbps, /4-DQPSK, FC 2 MHz, BW = 1 MHz 3 Mbps, 8DPSK, FC 2 MHz, BW = 1 MHz 2 Mbps, /4-DQPSK, FC 3 MHz, BW = 1 MHz 3 Mbps, 8DPSK, FC 3 MHz, BW = 1 MHz
Min. -
Typ. 19.5 1.5 30.5 0.1 -
Max. -20 -20 -40 -40
Unit dBm dB dB dB dBm dBm dBm dBm
ACPR2
165-DST-01
Rev 1.3
Apr-05-2006
Confidential
QA040506
4 of 10
SE2425U
RangeChargerTM 2.4 GHz Bluetooth Power Amplifier IC Preliminary Information
Typical Performance Characteristics
Low Mode
Test Conditions: VEN = VCC0 = VCC1 = VCC2 = VCC3 = 3.3 V, MODE = Low, TC = 25 C, f = 2.45 GHz, as measured on SiGe's SE2425U-EV1 evaluation board otherwise noted
Output Power vs. Input Power (25 C, 3.3 V, 2.45 GHz, Low Mode)
25 0.25
Icc vs. Output Power (25C, 3.3 V, 2.45 GHz, Low Mode)
20 Output Power (dBm)
0.2
10
ICC (A)
15
0.15
0.1
5
0.05
0 -30
0 -25 -20 -15 Input Pow er (dBm ) -10 -5 0 0 5 10 15 20 25 Output Pow er (dBm )
Figure 3: Typical Performance Data in Low Mode (a) Output Power vs. Input Power, (b) Current vs. Output Power
2MBit ACPR 2MHz Offset over Output Power (25 C, 2.45 GHz, Low Mode)
2.7V, -2MHz 3.3V, -2MHz 3.6V, -2MHz -14 -16 ACPR (dBm) -18 -20 -22 -24 -26 -28 -30 -32 -34 16 17 18 19 Output Pow er (dBm ) 20 21 2.7V, +2MHz 3.3V, +2MHz 3.6V, +2MHz
2MBit ACPR 3MHz Offset vs. Output Power over Voltage (25 C, 2.45 GHz, Low Mode)
2.7V, -3MHz 3.3V, -3MHz 3.6V, -3MHz -36 -38 ACPR (dBm) -40 -42 -44 -46 -48 -50 -52 -54 -56 14 15 16 17 18 19 Output Pow er (dBm ) 2.7V, +3MHz 3.3V, +3MHz 3.6V, +3MHz
Figure 4: Typical 2 Mbps Enhanced Data Rate (EDR) Performance Data in Low Mode (a) ACPR @ 2 MHz Offset vs. Output Power over Voltage (b) ACPR @ 3 MHz Offset vs. Output Power over voltage
3MBit ACPR 2MHz Offset vs. Output Power over Voltage (25 C, 2.45 GHz, Low Mode)
2.7V, -2MHz 3.3V, -2MHz 3.6V, -2MHz -14 -16 ACPR (dBm) -18 -20 -22 -24 -26 -28 -30 -32 -34 16 17 18 19 20 21 Output Pow er (dBm ) 2.7V, +2MHz 3.3V, +2MHz 3.6V, +2MHz
3MBit ACPR 3MHz Offset vs. Output Power over Voltage (25 C, 2.45 GHz, Low Mode)
2.7V, -3MHz 3.3V, -3MHz 3.6V, -3MHz -36 -38 ACPR (dBm) -40 -42 -44 -46 -48 -50 -52 -54 -56 14 15 16 17 18 19 Output Pow er (dBm ) 2.7V, +3MHz 3.3V, +3MHz 3.6V, +3MHz
Figure 5: Typical 3 Mbps Enhanced Data Rate (EDR) Performance Data in Low Mode (a) ACPR @ 2 MHz Offset vs. Output Power over Voltage (b) ACPR @ 3 MHz Offset vs. Output Power over voltage
165-DST-01
Rev 1.3
Apr-05-2006
Confidential
QA040506
5 of 10
SE2425U
RangeChargerTM 2.4 GHz Bluetooth Power Amplifier IC Preliminary Information
High Mode
Test Conditions: VEN = VCC0 = VCC1 = VCC2 = VCC3 = 3.3 V, MODE = High, TC = 25 C, f = 2.45 GHz, as measured on SiGe's SE2425U-EV1 evaluation board otherwise noted
Output Power vs. Input Power (25 C, 3.3 V, 2.45 GHz, High Mode)
25 0.23 0.21 20 Output Power (dBm) 0.19 0.17 15 ICC (A) 0.15 0.13 0.11 5 0.09 0.07 0 -30 0.05 -25 -20 -15 Input Pow er (dBm ) -10 -5 0 0 5 10 15 20 25 Output Pow er (dBm )
Icc vs. Output Power (25 C, 3.3 V, 2.45 GHz, High Mode)
10
Figure 6: Typical Performance Data in High Mode (a) Output Power vs. Input Power , (b) Current vs. Output Power
2MBit ACPR 2MHz Offset vs. Output Power over Voltage (25 C, 2.45 GHz, High Mode)
2.7V, -2MHz 3.3V, -2MHz 3.6V, -2MHz -14 -16 -18 ACPR (dBm) -20 -22 -24 -26 -28 -30 -32 -34 16 17 18 19 Output Pow er (dBm ) 20 21 2.7V, +2MHz 3.3V, +2MHz 3.6V, +2MHz
3MBit ACPR 3MHz Offset vs. Output Power over Voltage (25 C, 2.45 GHz, High Mode)
2.7V, -3MHz 3.3V, -3MHz 3.6V, -3MHz -36 -38 -40 ACPR (dBm) -42 -44 -46 -48 -50 -52 -54 -56 16 17 18 19 Output Pow er (dBm ) 20 21 2.7V, +3MHz 3.3V, +3MHz 3.6V, +3MHz
Figure 7: Typical 2 Mbps Enhanced Data Rate (EDR) Performance Data in High Mode (a) ACPR @ 2 MHz Offset vs. Output Power over Voltage (b) ACPR @ 3 MHz Offset vs. Output Power over Voltage
3MBit ACPR 2MHz Offset vs. Output Power over Voltage (25 C, 2.45 GHz, High Mode)
2.7V, -2MHz 3.3V, -2MHz 3.6V, -2MHz -14 -16 ACPR (dBm) -18 ACPR (dBm) -20 -22 -24 -26 -28 -30 -32 -34 16 17 18 19 20 21 Output Pow er (dBm ) 2.7V, +2MHz 3.3V, +2MHz 3.6V, +2MHz
3MBit ACPR 3MHz Offset vs. Output Power over Voltage (25 C, 2.45 GHz, High Mode)
2.7V, -2MHz 3.3V, -2MHz 3.6V, -2MHz -36 -38 -40 -42 -44 -46 -48 -50 -52 -54 -56 16 17 18 19 Output Pow er (dBm ) 20 21 2.7V, +2MHz 3.3V, +2MHz 3.6V, +2MHz
Figure 8: Typical 3 Mbps Enhanced Data Rate (EDR) Performance Data in High Mode (a) ACPR @ 2 MHz Offset vs. Output Power over Voltage (b) ACPR @ 3 MHz Offset vs. Output Power over Voltage
165-DST-01
Rev 1.3
Apr-05-2006
Confidential
QA040506
6 of 10
SE2425U
RangeChargerTM 2.4 GHz Bluetooth Power Amplifier IC Preliminary Information
Harmonic Performance
Test Conditions: VEN = VCC0 = VCC1 = VCC2 = VCC3 = 3.3 V, TC = 25 C, f = 2.45 GHz, as measured on SiGe's SE2425U-EV1 evaluation board otherwise noted
2nd Harmonics vs. Output Power over Mode (25 C, 3.3 V, 2.45 Ghz)
Low Mode -30 -35 Harmonic Level (dBc) -40 -45 -50 -55 -60 -65 15 16 17 18 19 20 21 22 23 24 25
Harmonic Level (dBc)
3rd Harmonics vs. Output Power over Mode (25 C, 3.3 V, 2.45 GHz)
Low Mode -30 -35 -40 -45 -50 -55 -60 -65 -70 -75 -80 15 16 17 18 19 20 21 22 23 24 25 High Mode
High Mode
Output Pow er (dBm )
Output Pow er (dBm )
Figure 9: Typical Harmonic Performance Data in Low and High Mode (a) 2nd Harmonic Performance in Low and High Mode (b) 3rd Harmonic Performance in Low and High Mode
165-DST-01
Rev 1.3
Apr-05-2006
Confidential
QA040506
7 of 10
SE2425U
RangeChargerTM 2.4 GHz Bluetooth Power Amplifier IC Preliminary Information
Branding Information
Figure 10 shows the SE2425U branding.
Pin 1 Designator Pin 1 Part Number Lot Code Company Name
SiGe 2425U Lot Code
Figure 10: SE2425U Branding Information
Package Information
This package is lead free.
Figure 11: SE2425U Package Drawing
165-DST-01
Rev 1.3
Apr-05-2006
Confidential
QA040506
8 of 10
SE2425U
RangeChargerTM 2.4 GHz Bluetooth Power Amplifier IC Preliminary Information
This page intentionally left blank.
165-DST-01
Rev 1.3
Apr-05-2006
Confidential
QA040506
9 of 10
SE2425U
RangeChargerTM 2.4 GHz Bluetooth Power Amplifier IC Preliminary Information
http://www.sige.com
Email: sales@sige.com
Headquarters:
1050 Morrison Drive, Suite 100 Ottawa ON K2H 8K7 Canada Phone: +1 613 820 9244 Fax: +1 613 820 4933
Sales Locations:
Hong Kong Phone: +852 3428 7222 Fax: +852 3579 5450 San Diego Phone: +1 858 668 3541 Fax: +1 858 668 3546 United Kingdom Phone: +44 1264 850754 Fax: +44 1264 852601
Product Preview The datasheet contains information from the product concept specification. SiGe Semiconductor, Inc. reserves the right to change information at any time without notification. Preliminary Information The datasheet contains information from the design target specification. SiGe Semiconductor, Inc. reserves the right to change information at any time without notification. Production testing may not include testing of all parameters. Information furnished is believed to be accurate and reliable and is provided on an "as is" basis. SiGe Semiconductor, Inc. assumes no responsibility or liability for the direct or indirect consequences of use of such information nor for any infringement of patents or other rights of third parties, which may result from its use. No license or indemnity is granted by implication or otherwise under any patent or other intellectual property rights of SiGe Semiconductor, Inc. or third parties. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SiGe Semiconductor, Inc. products are NOT authorized for use in implantation or life support applications or systems without express written approval from SiGe Semiconductor, Inc. RangeCharger , StreamCharger , and PointCharger Copyright 2006 SiGe Semiconductor, Inc. All Rights Reserved
TM TM TM
are trademarks owned by SiGe Semiconductor, Inc.
165-DST-01
Rev 1.3
Apr-05-2006
Confidential
QA040506
10 of 10

▲Up To Search▲

Price & Availability of SE2425U-R

	To Download SE2425U-R Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .