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| STRH80P6FSY3 P-channel 60V - 0.021 - TO-254AA Rad-hard low gate charge STripFETTM Power MOSFET General features Type STRH80P6FSY3 VDSS 60V Low RDS(on) Fast switching Single event effect (SEE) hardned Low total gate charge Light weight 100% avalanche tested Application oriented characterization Hermetically sealed Heavy ion SOA 100kRad TID SEL & SEGR with 34Mev/cm/mg LET ions TO-254AA Internal schematic diagram Description This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to sustain high TID and provide immunity to heavy ion effects. It is therefore suitable as power switch in mainly highefficiency DC-DC converters. It is also intended for any application with low gate charge drive requirements. Application Satellite High reliability Order codes Part number STRH80P6FSY1 STRH80P6FSY3 1. Mil temp range 2. Space flights parts (full ESA flow screening) (1) (2) Marking RH80P6FSY1 RH80P6FSY3 Package TO-254AA TO-254AA Packaging Individual strip pack Individual strip pack March 2007 Rev 2 1/12 www.st.com 12 Contents STRH80P6FSY3 Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 2.2 2.3 Pre-irradiation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Post-irradiation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical characteristics (curves) ............................. 7 3 4 5 Test circuit ................................................ 9 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/12 STRH80P6FSY3 Electrical ratings 1 Electrical ratings Table 1. Symbol VDS VGS ID (1) Absolute maximum ratings (pre-irradiation) Parameter Drain-source voltage (VGS = 0) Gate-source voltage Drain current (continuous) at TC= 25C Drain current (continuous) at TC= 100C Drain current (pulsed) Total dissipation at TC= 25C Value 60 18 80 50 320 250 2 -55 to 150 150 Unit V V A A A W V/ns C C ID (1) IDM (2) PTOT (1) dv/dt (3) Peak diode recovery voltage slope Tstg Tj Storage temperature Max. operating junction temperature 1. Rated according to the Rthj-case 2. Pulse width limited by safe operating area 3. ISD < 80A, di/dt < 117A/s, VDD = 80%V(BR)DSS Table 2. Symbol Thermal data Parameter Value 0.5 0.21 48 Unit C/W C/W C/W Rthj-case Thermal resistance junction-case Rthc-s Case-to-sink Rthj-amb Thermal resistance junction -amb Table 3. Symbol IAR EAS EAR Avalanche characteristics Parameter Avalanche current, repetitive or not-repetitive (pulse width limited by Tj Max) Single pulse avalanche energy (starting Tj=25C, ID=IAR, VDD=42V) Repetitive avalanche Value 40 2303 50 Unit A mJ mJ Note: For the P-channel MOSFET actual polarity of voltages and current has to be reversed 3/12 Electrical characteristics STRH80P6FSY3 2 Electrical characteristics (TCASE = 25C unless otherwise specified) 2.1 Pre-irradiation Table 4. Symbol IDSS IGSS V(BR)DSS VGS(th) RDS(on) On/off states Parameter Zero gate voltage drain current (VGS = 0) Gate body leakage current (VDS = 0) Drain-source breakdown voltage Gate threshold voltage Static drain-source on resistance Test conditions 80% BVDss VGS = 18V ID = 250A, VGS = 0V VDS =VGS, ID = 1mA VGS = 12V, ID = 40A 100 2 0.021 4.5 0.024 Min. Typ. Max 10 100 Unit A nA V V Table 5. Symbol Ciss Coss Crss Qg Qgs Qgd RG Dynamic Parameter Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-source charge Gate-drain charge Test conditions VDS = 25V, f=1MHz, VGS=0V VDD = 30V, ID = 40A, VGS=12V f=1MHz Gate DC Bias=0 Test signal level=20mV open drain Min. Typ. 8500 1521 640 291 30 66 405 42 92 2.5 Max Unit pF pF pF nC nC nC Gate input resistance 1.2 Table 6. Symbol td(on) tr td(off) tf Switching times Parameter Turn-on delay time Rise time Turn-off-delay time Fall time Test conditions Min. Typ. 32 214 182 115 Max Unit ns ns ns ns VDD = 30V, ID = 80A, RG = 4.7, VGS = 12V 4/12 STRH80P6FSY3 Electrical characteristics Table 7. Symbol ISD ISDM (1) VSD (2) trr Qrr IRRM trr Qrr IRRM Source drain diode Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 80A, VGS = 0 ISD = 80A, di/dt = 100A/s VDD= 20V, Tj = 25C ISD = 80A, di/dt = 100A/s VDD= 20V, Tj = 150C 350 5.4 31 460 9 39 Test conditions Min. Typ. Max Unit 80 320 1.1 A A V ns C A ns C A 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300s, duty cycle 1.5% 2.2 Post-irradiation The ST Rad-Hard Power MOSFETs are tested to verify the radiation capability. The technology is extremely resistant to assurance well functioning of the device inside the radiation environments. Every manufacturing lot is tested for total ionizing dose. (@Tj=25C up to 100Krad (a)) Table 8. Symbol IDSS IGSS V(BR)DSS VGS(th) RDS(on) On/off states Parameter Test conditions Min. Typ. Max 10 100 Unit A nA V Zero gate voltage drain current 80% BVDss (VGS = 0) Gate body leakage current (VDS = 0) Drain-source breakdown voltage Gate threshold voltage Static drain-source on resistance VGS = 18V ID = 250A, VGS = 0V VDS =VGS, ID = 1mA VGS = 12V, ID = 40A 100 2 4.5 0.021 0.024 V a. According to ESCC 22900 specification, Co60 gamma rays, dose rate:0.1rad/sec. 5/12 Electrical characteristics STRH80P6FSY3 Table 9. Ion Kr Xe Single event effect, SOA(1) Let (Mev/(mg/cm2)) 34 55.9 Energy (MeV) 316 459 Range (m) 43 43 VDS (V) @VGS0V 60 48 1. Rad-Hard Power MOSFETs have been characterized in heavy ion environment for single event effect (SEE). Single event effect characterization is illustrated Table 10. Symbol ISD ISDM (1) VSD (2) trr Qrr IRRM trr Qrr IRRM Source drain diode Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 80A, VGS = 0 ISD = 80A, di/dt = 100A/s VDD= 20V, Tj = 25C ISD = 80A, di/dt = 100A/s VDD= 20V, Tj = 150C 350 5.4 31 460 9 39 Test conditions Min. Typ. Max Unit 80 320 1.1 A A V ns C A ns C A 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300s, duty cycle 1.5% 6/12 STRH80P6FSY3 Electrical characteristics 2.3 Figure 1. Electrical characteristics (curves) Safe operating area Figure 2. Thermal impedance Figure 3. Output characteristics Figure 4. Transfer characteristics Figure 5. Gate charge vs gate-source voltage Figure 6. Capacitance variations 7/12 Electrical characteristics Figure 7. Normalized BVDSS vs temperature Figure 8. STRH80P6FSY3 Static drain-source on resistance Figure 9. Normalized gate threshold voltage vs temperature Figure 10. Normalized on resistance vs temperature Figure 11. Source drain-diode forward characteristics 8/12 STRH80P6FSY3 Test circuit 3 Test circuit Figure 12. Switching times test circuit for resistive load (1) 1. Max driver VGS slope = 1V/ns (no DUT) 9/12 Package mechanical data STRH80P6FSY3 4 Package mechanical data TO-254AA MECHANICAL DATA mm. MIN. 13.59 13.59 20.07 6.32 1.02 3.53 16.89 6.86 0.89 3.81 3.81 12.95 3.05 0.71 1.0 1.65 0.065 14.50 0.510 0.120 0.025 0.040 1.14 0.035 0.150 0.150 0.570 TYP MAX. 13.84 13.84 20.32 6.60 1.27 3.78 17.40 MIN. 0.535 0.535 0.790 0.249 0.040 0.139 0.665 0.270 0.045 inch TYP. MAX. 0.545 0.545 0.80 0.260 0.050 0.149 0.685 DIM. A B C D E F G H I J K L M N R1 R2 10/12 STRH80P6FSY3 Revision history 5 Revision history Table 11. Date 18-Dec-2006 19-Mar-2007 Revision history Revision 1 2 First release Complete version Changes 11/12 STRH80P6FSY3 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST's terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST'S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER'S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. (c) 2007 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 12/12 |
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