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| PD-9.1431 TARGET IRGCC20UE IRGCC20UE IGBT Die in Wafer Form C G E 600 V Size 2 Ultra-Fast Speed 5" Wafer Electrical Characteristics ( Wafer Form ) Parameter VCE (on) V(BR)CES VGE(th) ICES IGES Description Collector-to-Emitter Saturation Voltage Colletor-to-Emitter Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Collector Current Gate-to-Emitter Leakage Current Guaranteed (Min/Max) Test Conditions 3.1V Max. IC = 6.5A, TJ = 25C, VGE = 15V 600V Min. TJ = 25C, ICES = 250A, VGE = 0V 3.0V Min., 5.5V Max. V GE = VCE , TJ =25C, IC =250A 250 A Max. TJ = 25C, VCE = 600V 500 nA Max. TJ = 25C, VGE = +/- 20V Mechanical Data Norminal Backmetal Composition, Thickness: Norminal Front Metal Composition, Thickness: Dimensions: Wafer Diameter: Wafer thickness: Relevant Die Mechanical Dwg. Number Minimum Street Width Reject Ink Dot Size Ink Dot Location Recommended Storage Environment: Reference Standard IR packaged part ( for design ) : IRGBC20U Cr-Ni-Ag (1 kA-4kA-6kA ) 99% Al, 1% Si (3 microns) 0.107" x 0.134" 125mm, with std. < 100 > flat .015" + / -.003" 01-5198 100 Microns 0.25mm Diameter Minimum See Die Outline drawing below Store in original container, in dessicated nitrogen, with no contamination Die Outline INK DOT LOCATION 1.66 (.066 ) NOTES : 1. ALL D IM ENSIONS ARE SH OW N IN MILLIM ETERS ( INCH ES ) 2. CONTROLLING DIMENSION : ( INCH ) 3. LETTER DESIGNATION : S = SOURC E G = GATE 4. DIMENSION AL TOLERANCES BONDING PADS : < 0.635 TOLER AN CE = +/- 0.013 W IDTH < (.0250 ) TOLERANCE =+/- (.0005 ) & > 0.635 TOLERANCE = +/- 0.025 LEN GTH > (.0250 ) TOLERANCE = +/- (.0010 ) OVER ALL D IE < 1.270 TOLER AN CE = +/- 0.102 W IDTH < (.050 ) TOLERANCE = +/- (.004 ) & > 0.635 TOLERANCE = +/- 0.203 LEN GTH > (.050 ) TOLERANCE = + /- (.008 ) 5. UNLESS OTHERW ISE NOTED ALL DIE ARE GEN III 0.94 (.037) EM ITT ER 3.40 (.134 ) 0.75 (.029 ) GATE 0.76 2.72 (.030 ) (.107 ) |
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