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| PD - 9.1117 IRGPH40FD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features * Switching-loss rating includes all "tail" losses TM * HEXFRED soft ultrafast diodes * Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Frequency curve C Fast CoPack IGBT VCES = 1200V VCE(sat) 3.3V G @VGE = 15V, IC = 17A E n-channel Description Co-packaged IGBTs are a natural extension of International Rectifier's well known IGBT line. They provide the convenience of an IGBT and an ultrafast recovery diode in one package, resulting in substantial benefits to a host of high-voltage, high-current, motor control, UPS and power supply applications. TO-247AC Absolute Maximum Ratings Parameter VCES IC @ T C = 25C IC @ T C = 100C ICM ILM IF @ T C = 100C IFM VGE PD @ T C = 25C PD @ T C = 100C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw. Max. 1200 29 17 58 58 8.0 130 20 160 65 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbf*in (1.1 N*m) Units V A V W C Thermal Resistance Parameter RJC RJC RCS RJA Wt Junction-to-Case - IGBT Junction-to-Case - Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight Min. -- -- -- -- -- Typ. -- -- 0.24 -- 6 (0.21) Max. 0.77 1.7 -- 40 -- Units C/W g (oz) Revision 1 C-285 IRGPH40FD2 Electrical Characteristics @ T = 25C (unless otherwise specified) J V(BR)CES V(BR)CES/TJ VCE(on) VGE(th) VGE(th)/TJ gfe ICES VFM IGES Parameter Min. Typ. Max. Units Conditions Collector-to-Emitter Breakdown Voltage 1200 -- -- V VGE = 0V, I C = 250A Temperature Coeff. of Breakdown Voltage -- 1.3 -- V/C VGE = 0V, IC = 1.0mA Collector-to-Emitter Saturation Voltage -- 2.5 3.3 IC = 17A V GE = 15V -- 3.2 -- V IC = 29A See Fig. 2, 5 -- 3.0 -- IC = 17A, T J = 150C Gate Threshold Voltage 3.0 -- 5.5 VCE = VGE, IC = 250A Temperature Coeff. of Threshold Voltage -- -13 -- mV/C VCE = VGE, IC = 250A Forward Transconductance 5.0 11 -- S VCE = 100V, I C = 17A Zero Gate Voltage Collector Current -- -- 250 A VGE = 0V, V CE = 1200V -- -- 1000 VGE = 0V, V CE = 1200V, T J = 150C Diode Forward Voltage Drop -- 2.6 3.3 V IC = 8.0A See Fig. 13 -- 2.3 3.0 IC = 8.0A, T J = 150C Gate-to-Emitter Leakage Current -- -- 100 nA VGE = 20V Switching Characteristics @ T = 25C (unless otherwise specified) J Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres trr Irr Qrr di(rec)M/dt Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge Diode Peak Rate of Fall of Recovery During t b Min. -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ. 45 11 17 70 58 320 370 2.6 5.4 8.0 70 54 670 930 15 13 1200 75 15 63 106 4.5 6.2 140 335 133 85 Max. Units Conditions 67 IC = 17A 16 nC VCC = 400V 26 See Fig. 8 -- TJ = 25C -- ns IC = 17A, V CC = 800V 550 VGE = 15V, R G = 10 630 Energy losses include "tail" and -- diode reverse recovery. -- mJ See Fig. 9, 10, 11, 18 15 -- TJ = 150C, See Fig. 9, 10, 11, 18 -- ns IC = 17A, V CC = 800V -- VGE = 15V, R G = 10 -- Energy losses include "tail" and -- mJ diode reverse recovery. -- nH Measured 5mm from package -- VGE = 0V -- pF VCC = 30V See Fig. 7 -- = 1.0MHz 95 ns TJ = 25C See Fig. 160 TJ = 125C 14 I F = 8.0A 8.0 A TJ = 25C See Fig. 11 TJ = 125C 15 V R = 200V 380 nC TJ = 25C See Fig. 880 TJ = 125C 16 di/dt = 200A/s -- A/s TJ = 25C See Fig. -- TJ = 125C 17 Pulse width 5.0s, single shot. Notes: Repetitive rating; V GE=20V, pulse width limited by max. junction temperature. ( See fig. 20 ) VCC=80%(V CES), VGE=20V, L=10H, R G= 10, ( See fig. 19 ) Pulse width 80s; duty factor 0.1%. C-286 IRGPH40FD2 25 D uty c yc le : 50% TJ = 12 5 C T s in k = 9 0 C G ate d rive as sp e cified Turn-on lo sse s in clu de e ffec ts of reve rse re co very Power Dissipation = 35 W 20 Load Current (A) 15 6 0 % o f ra te d vo lta g e 10 5 0 0.1 1 10 A 100 f, Frequency (kHz) Fig. 1 - Typical Load Current vs. Frequency (Load Current = I RMS of fundamental) 100 1000 I C , C o lle ctor-to-E m itter C urre nt (A ) IC , C olle ctor-to -E m itte r C u rren t (A ) TJ = 2 5C TJ = 15 0 C 100 TJ = 1 50 C 10 10 TJ = 2 5C 1 0.1 1 1 V G E = 15 V 20 s P UL S E W ID TH 10 0.01 5 10 V C C = 1 00 V 5 s P U LS E W IDTH 15 20 V C E , C o llector-to-Em itter V oltage (V) V G E , G ate -to-E m itter V olta ge (V ) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics C-287 IRGPH40FD2 30 V G E = 15 V 5.0 V G E = 1 5V 8 0 s P U LS E W IDTH I C = 3 4A 20 V C E , C ollec tor-to -E m itte r V o lta ge (V ) M aximum D C C ollector Current (A ) 4.0 10 3.0 I C = 1 7A I C = 8.5 A 2.0 -60 -40 -20 0 20 40 60 80 100 120 14 0 160 0 25 50 75 100 125 150 T C , C ase Tem perature (C ) T C , C as e T em pe ra ture (C ) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Collector-to-Emitter Voltage vs. Case Temperature 1 T herm al Response (Z th JC ) D = 0 .5 0 0.2 0 0.1 0.1 0 0 .05 SIN G LE P UL SE (TH ER MA L R E SP O NS E ) N o te s: 1 . D u ty fa c to r D = t 1 /t 2 PD M t 1 t2 0.0 2 0.0 1 0.01 0.00001 2 . P e a k TJ = P D M x Z thJ C + T C 0.0001 0.001 0.01 0.1 1 10 t 1 , R ectangular Pulse D uration (sec) Fig. 6 - Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case C-288 IRGPH40FD2 24 0 0 20 20 0 0 16 0 0 Cies 12 0 0 Coes V G E , G a te-to-E m itte r V o ltag e (V ) V GE = 0V, f = 1MHz C ies = C ge + C gc , Cce SHORTED C res = C gc C oes = C ce + C gc V C E = 40 0V I C = 17 A 16 C, C apacitance (pF) 12 8 800 Cres 400 4 0 1 10 100 0 0 10 20 30 40 50 V C E , C o llector-to-Em itter V oltage (V) Q g , T o tal G a te C h a rg e (n C ) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 8.7 8.6 Total Switching Losses (mJ) Total Switching Losses (mJ) VCC VGE TC IC = 800V = 15V = 25C = 17A 100 RG = 10 V GE = 15V V CC = 800V I C = 34A I C = 17A 8.5 8.4 8.3 10 I C = 8.5A 8.2 8.1 8.0 7.9 0 10 20 30 40 50 60 1 -60 -40 -20 0 20 40 60 80 A 100 120 140 160 R G , Gate Resistance () TC , Case Temperature (C) W Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. 10 - Typical Switching Losses vs. Case Temperature C-289 IRGPH40FD2 40 I , C o llec to r-to-E m itter C urren t (A ) Total Switching Losses (mJ) RG TC V CC V GE = 10 = 150C = 800V = 15V 1000 VG E E 20 V G= T J = 12 5C 30 100 S A FE O P E RA TIN G A RE A 10 20 10 1 0 0 10 20 30 A 40 C 0.1 1 10 100 1000 10000 I C , Collector-to-Emitter Current (A) V C E , C o llec to r-to -E m itte r V o lta g e (V ) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current 100 Fig. 12 - Turn-Off SOA Instantaneous Forward Current - I F (A) 10 TJ = 150C TJ = 125C TJ = 25C 1 0 2 4 6 8 10 Forward Voltage Drop - V FM (V) Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current C-290 IRGPH40FD2 200 100 VR = 200V TJ = 125C TJ = 25C 160 VR = 200V TJ = 125C TJ = 25C I F = 16A t rr - (ns) 120 I F = 8.0A I F = 4.0A I IRRM - (A) IF = 16A IF = 8.0A 10 I F = 4.0A 80 40 0 100 dif /dt - (A/s) 1000 1 100 1000 di f /dt - (A/s) Fig. 14 - Typical Reverse Recovery vs. dif/dt Fig. 15 - Typical Recovery Current vs. dif/dt 600 1000 VR = 200V TJ = 125C TJ = 25C 500 I F = 4.0A 400 di(rec)M/dt - (A/s) Q RR - (nC) IF = 16A I F = 8.0A 100 300 IF = 16A I F = 8.0A 200 I F = 4.0A 100 VR = 200V TJ = 125C TJ = 25C 10 100 0 100 di f /dt - (A/s) 1000 di f /dt - (A/s) 1000 Fig. 16 - Typical Stored Charge vs. dif/dt Fig. 17 - Typical di(rec)M/dt vs. dif/dt C-291 IRGPH40FD2 Same type device as D.U.T. 90% Vge +Vge Vce 80% of Vce 430F D.U.T. Ic 10% Vce Ic 5% Ic td(off) tf 90% Ic Fig. 18a - Test Circuit for Measurement of ILM, Eon, Eoff(diode) , trr, Qrr, Irr, td(on), tr, td(off), tf Eoff = t1+5S Vce ic dt t1 t1 t2 Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining Eoff, td(off), tf GATE VOLTAGE D.U.T. 10% +Vg +Vg tx 10% Vcc Vce Vcc 10% Ic 90% Ic DUT VOLTAGE AND CURRENT Ipk Ic DIODE RECOVERY WAVEFORMS td(on) tr 5% Vce t2 Eon = Vce ie dt t1 t2 DIODE REVERSE RECOVERY ENERGY t3 10% Irr Vcc Vpk Irr trr Ic Qrr = trr id dt tx t4 Erec = Vd id dt t3 t1 t4 Fig. 18c - Test Waveforms for Circuit of Fig. 18a, Defining E on, td(on), tr Fig. 18d - Test Waveforms for Circuit of Fig. 18a, Defining E rec, trr, Qrr, Irr Refer to Section D for the following: Appendix H: Section D - page D-10 Fig. 18e - Macro Waveforms for Test Circuit Fig. 18a Fig. 19 - Clamped Inductive Load Test Circuit Fig. 20 - Pulsed Collector Current Test Circuit Package Outline 3 - JEDEC Outline TO-247AC C-292 Section D - page D-13 |
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