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| Bulletin I27122 rev. B 03/02 IRKT152/04 THYRISTOR/ THYRISTOR INT-A-pakTM Power Module Features Electrically Isolated by DBC Ceramic ( Al 2 O 3) 3500 V RMS Isolating Voltage Industrial Standard Package High Surge Capability Glass Passivated Chips Simple Mounting UL under approval 150 A Applications Battery Charges Welders Power Converters Major Ratings and Characteristics Parameters IT(AV) @ TC IT(RMS) ITSM 2 CASE STYLE NEW INT-A-PAK Units A C A IRKT152/04 150 85 330 @ 50Hz @ 60Hz 4000 4200 80 73 800 400 - 40 to 150 - 40 to 125 KA2s V C KA2s It 2 @ 50Hz @ 60Hz I t VRRM TSTG range TJ range 1 IRKT152/04 Bulletin I27122 rev. B 03/02 ELECTRICAL SPECIFICATIONS Voltage Ratings Type number VRRM/VDRM , Maximum repetitive peak reverse voltage VRSM/VDSM, Maximum non-repetitive peak reverse voltage IRRM / IDRM @ 125C mA 50 V IRKT152/04 400 V 500 On-state Conduction Parameter IT(AV) Max. average on-state current @ Case temperature Maximum peak, one-cycle on-state, non-repetitive surge current I2 t Maximum I2t for fusing IRKT152/04 150 85 330 4000 4200 3350 3500 80 73 56 51 Units Conditions A C A A 180 conduction half sine wave as AC switch t = 10ms t = 10ms KA2s t = 10ms t = 10ms KA2s V m V mA Ipk = 470A, TJ = 25C TJ = 25oC, anode supply = 6V, resistive load, gate open circuit TJ = 25oC, anode supply = 6V, resistive load No voltage 100% VRRM No voltage 100% VRRM Sine half wave, Initial TJ = TJ max t = 8.3ms reapplied t = 8.3ms reapplied t = 8.3ms reapplied t = 8.3ms reapplied t = 0.1 to 10ms, no voltage reapplied @ TJ max. IT(RMS) Maximum RMS on-state current ITSM I2t VT(TO) rt VTM IH IL Maximum I2t for fusing Value of threshold voltage On-state slope resistance Maximum on-state voltage drop Maximum Holding Current Maximum Latching Current 800 0.82 1.44 1.44 200 400 Switching tgd tgr tq Typical delay time Typical rise time Typical turn-off time 1 2 50 - 200 s TJ = 25oC TJ = 25oC Gate Current=1A dIg/dt=1A/s Vd=0,67% VDRM ITM = 300 A; -dI/dt = 15 A/s; TJ = TJ max Vr = 50 V; dV/dt = 20 V/s; Gate 0 V, 100 Blocking IRRM IDRM VINS Maximum peak reverse and off-state leakage current RMS isolation voltage 3500 1000 V V/s 50Hz, circuit to base, all terminals shorted, t = 1s TJ = TJ max., exponential to 67% rated VDRM 50 mA TJ = 125oC dV/dt critical rate of rise of off-state voltage 2 IRKT152/04 Bulletin I27122 rev. B 03/02 Triggering Parameter PGM IGM -VGT VGT Max. peak gate power IRKT152/04 12 3 3 10 4 2.5 1.7 270 150 80 0.3 10 300 Units Conditions W W A V V TJ = - 40C TJ = 25C TJ = TJ max. TJ = - 40C mA V mA A/s @ TJ = TJ max., ITM = 400A rated VDRM applied TJ = 25C TJ = TJ max. @ TJ = TJ max., rated VDRM applied Anode supply = 6V, resistive load; Ra = 1 Anode supply = 6V, resistive load; Ra = 1 tp 5ms, TJ = TJ max. f=50Hz, TJ = TJ max. tp 5ms, TJ = TJ max. PG(AV) Max. average gate power Max. peak gate current Max. peak negative gate voltage Max. required DC gate voltage to trigger IGT Max. required DC gate current to trigger VGD IGD di/dt Max. gate voltage that will not trigger Max. gate current that will not trigger Max. rate of rise of turned-on current Thermal and Mechanical Specifications Parameter TJ Tstg RthJC RthCS T wt Max. junction operating temperature range Max. storage temperature range Max. thermal resistance, junction to case Max. thermal resistance, case to heatsink Mounting IAP to heatsink torque 10% busbar to IAP Approximate weight Case Style IRKT152/04 -40 to 125 -40 to 150 0.18 0.05 4 to 6 4 to 6 200 (7.1) New Int-A-Pak Units Conditions C C K/W K/W Nm g(oz) DC operation, per junction Mounting surface smooth, flat and greased Per module A mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the compound. Lubricated threads. R Conduction (per Junction) (The following table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC) Devices IRKT152/04 Sinusoidal conduction @ TJ max. 180o 0.007 120o 0.010 90o 0.013 60o 0.016 30o 0.017 180o 0.009 Rectangular conduction @ TJ max. 120o 0.012 90o 0.014 60o 0.016 30o 0.017 Units K/W 3 IRKT152/04 Bulletin I27122 rev. B 03/02 Ordering Information Table Device Code IRK 1 1 2 3 4 - T 2 152 3 / 04 4 Module Type Circuit Configuration Current Rating: IT(AV) Voltage Code: Code x 100 = VRRM Outline Table All dimensions are in millimeters 1 2 3 57 46 4 IRKT152/04 Bulletin I27122 rev. B 03/02 Maximum Allowable Case Temperature (C) 130 120 110 100 90 80 0 Maximum Allowable Case Temperature (C) IRKT152 RthJC (DC) = 0.182 K/W 130 120 110 100 90 80 70 60 0 IRKT152 RthJC (DC) = 0.182 K/W Conduction Angle Conduction Period 30 60 90 120 180 30 60 90 120 180 DC 20 40 60 80 100 120 140 160 Average On-state Current (A) 50 100 150 200 250 Average On-state Current (A) Fig. 2 - Current Ratings Characteristics Maximum Average On-state Power Loss (W) Fig. 1 - Current Ratings Characteristics Maximum Average On-state Power Loss (W) 220 200 180 160 140 120 100 80 60 40 20 0 0 180 120 90 60 30 RMS Limit 300 250 200 DC 180 120 90 60 30 150 RMS Limit 100 50 0 0 50 100 150 200 250 Average On-state Current (A) Fig. 4 - Forward Power Loss Characteristics Conduction Period Conduction Angle IRKT152 Tj = 180C IRKT152 Tj = 125C 20 40 60 80 100 120 140 160 Average On-state Current (A) Fig. 3 - Forward Power Loss Characteristics Peak Half Sine Wave On-state Current (A) Peak Half Sine Wave On-state Current (A) 3600 3400 3200 3000 2800 2600 2400 2200 2000 1800 1600 1 At Any Rated Load Condition And With Rated Vrrm Applied Following Surge. Initial Tj = 125C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 4500 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control 4000 Of Conduction May Not Be Maintained. Initial Tj = 125C No Voltage Reapplied 3500 Rated Vrrm Reapplied 3000 2500 2000 IRKT152 Per Junction IRKT152 Per Junction 10 100 1500 0.01 0.1 1 Number Of Equal Amplitude Half Cycle Current Pulses (N) Fig.5 - Maximum Non-Repetitive Surge Current Pulse Train Duration (s) Fig. 6 - Maximum Non-Repetitive Surge Current 5 IRKT152/04 Bulletin I27122 rev. B 03/02 Maximum Total On-state Power Loss (W) 500 .01 =0 SA Rth /W 4K 0.0 400 Conduction Angle 300 200 100 0 0 50 IRKT152 Per Module Tj = 125C 180 120 90 60 30 0. 12 K/ 0.1 6K W /W 0.2 5K /W 0.4 K/W 0.6 K/W 1 K/W 08 0. W K/ K/W R elta -D 0 100 150 200 250 300 350 25 50 75 100 125 Total RMS Output Current (A) Maximum Allowable Ambient Temperature (C) Fig.7 - On State Power Loss Characteristics 900 = SA Rth Maximum Total Power Loss (W) 800 700 600 500 400 300 200 100 0 0 50 100 150 200 250 0 300 2 x IRKT152 Single Phase Bridge Connected Tj = 125C /W 4K 0.0 180 (Sine) 180 (Rect) K/ W 0.1 2K /W 0.2 K/W 0.35 K/W 0.6 K/W 0. 08 /W 1K 0.0 R elta -D 25 50 75 100 125 Total Output Current (A) Maximum Allowable Ambient Temperature (C) Fig.8 - On State Power Loss Characteristics 1400 A hS Rt Maximum Total Power Loss (W) 1200 1000 800 600 400 200 0 0 100 200 300 400 0 500 120 (Rect) = 04 0. W K/ ta el -D R 0.0 8K /W 0.1 K/W 0.1 6K /W 0.25 K/W 0.4 K /W 1 K/W 25 50 75 100 125 Total Output Current (A) Maximum Allowable Ambient Temperature (C) Fig. 9 - On State Power Loss Characteristics 6 IRKT152/04 Bulletin I27122 rev. B 03/02 Transient Thermal Impedance Z thJC (K/W) 1000 Instantaneous On-state Current (A) 1 Steady State Value RthJC = 0.182 K/W (DC Operation) 100 0.1 10 Tj = 25C Tj = 125C IRKT152 Per Junction 0.01 IRKT152 1 0.5 1 1.5 2 2.5 0.001 0.001 0.01 0.1 1 Instantaneous On-state Voltage (V) Fig. 10 - On-State Voltage Drop Characteristics Square Wave Pulse Duration (s) Fig. 11 - Thermal Impedance ZthJC Characteristics (1) PGM = 200 W, tp = 300 s (2) PGM = 60 W, tp = 1 ms (3) PGM = 30 W, tp = 2 ms (4) PGM = 12 W, tp = 5 ms (a) TJ = -40 C 100 Instantaneous Gate Voltage (V) 10 Rectangular gate pulse a)Recommended load line for rated di/dt: 20 V, 20 ohms tr = 0.5 s, tp >= 6 s b)Recommended load line for <= 30% rated di/dt: 15 V, 40 ohms tr = 1 s, tp >= 6 s (b) TJ = 25 C TJ = 125 C 1 VGD IGD IRKt152 (4) (3) (2) (1) Frequency Limited by PG(AV) 0.1 0.001 0.01 0.1 1 10 100 1000 Instantaneous Gate Current (A) Fig.12 - Gate Characteristics Data and specifications subject to change without notice. This product has been designed and qualified for Multiple Level. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7309 Visit us at www.irf.com for sales contact information. 03/02 7 |
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