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PD - 9.1258C
IRLML2803
HEXFET(R) Power MOSFET
l l l l l l l
Generation V Technology Ultra Low On-Resistance N-Channel MOSFET SOT-23 Footprint Low Profile (<1.1mm) Available in Tape and Reel Fast Switching
D
VDSS = 30V
G S
RDS(on) = 0.25
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. A customized leadframe has been incorporated into the standard SOT-23 package to produce a HEXFET Power MOSFET with the industry's smallest footprint. This package, dubbed the Micro3, is ideal for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the Micro3 allows it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards. M ic ro3
Absolute Maximum Ratings
Parameter
ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C VGS dv/dt TJ,TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Junction and Storage Temperature Range
Max.
1.2 0.93 7.3 540 4.3 20 5.0 -55 to + 150
Units
A mW
mW/C
V V/ns C
Thermal Resistance
Parameter
RJA Maximum Junction-to-Ambient
Typ.
---
Max.
230
Units
C/W
8/25/97
IRLML2803
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss
Min. 30 --- --- --- 1.0 0.87 --- --- --- --- --- --- --- --- --- --- --- --- --- ---
Typ. --- 0.029 --- --- --- --- --- --- --- --- 3.3 0.48 1.1 3.9 4.0 9.0 1.7 85 34 15
Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 0.25 VGS = 10V, ID = 0.91A 0.40 VGS = 4.5V, ID = 0.46A --- V VDS = VGS , ID = 250A --- S VDS = 10V, ID = 0.46A 1.0 VDS = 24V, VGS = 0V A 25 VDS = 24V, VGS = 0V, TJ = 125C -100 VGS = -20V nA 100 VGS = 20V 5.0 ID = 0.91A 0.72 nC VDS = 24V 1.7 VGS = 10V, See Fig. 6 and 9 --- VDD = 15V --- ID = 0.91A ns --- RG = 6.2 --- RD = 16, See Fig. 10 --- VGS = 0V --- pF VDS = 25V --- = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
IS
ISM
VSD t rr Q rr
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge
Min. Typ. Max. Units --- --- --- --- --- --- --- --- 26 22 0.54 A 7.3 1.2 40 32 V ns nC
Conditions MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25C, IS = 0.91A, VGS = 0V TJ = 25C, IF = 0.91A di/dt = 100A/s
D
G S
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Pulse width 300s; duty cycle 2%. Surface mounted on FR-4 board, t 5sec.
I SD 0.91A, di/dt 120A/s, VDD V (BR)DSS,
TJ 150C
IRLML2803
10
VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTT OM 3.0V TOP
10
I D , Dra in-to -S o u rce Cu rre n t (A )
1
I D , Dra in-to -S o u rce Cu rre n t (A)
VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTT OM 3.0V TOP
1
3.0V
3 .0V 20 s P U LSE W IDTH TJ = 25 C A
0.1 1 10
0.1
0.1 0.1 1
20 s P U LSE W IDTH TJ = 15 0C A
10
V D S , D rain-to-S ource V oltage (V )
V D S, D rain-to-S ource Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
10
2.0
I D , D r ain- to-S ourc e C urre nt (A )
TJ = 25C T J= 150C
R D S (o n ) , D ra in -to -S o u rc e O n R e si sta n ce (N o rm a li ze d )
I D = 0.91 A
1.5
1
1.0
0.5
0.1 3.0
V D S = 1 0V 2 0 s P U L S E W ID T H
3.5 4.0 4.5 5.0 5.5 6.0 6.5
A
0.0 -60 -40 -20 0 20 40 60 80
V G S = 10 V
100 120 140 160
A
V G S , Ga te-to-S o urce V oltage (V )
T J , Junction T emperature (C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
IRLML2803
160 140 120 100
C , C a p a c ita n c e (p F )
C is s C os s
80 60 40 20 0 1 10 100
V G S , G a te -to -S o u rc e V o lta g e (V )
V GS C is s C rs s C o ss
= 0 V, f = 1M H z = C gs + C gd , Cds SH O RTE D = C gd = C ds + C g d
20
I D = 0 .9 1A V D S = 24 V V D S = 15 V
16
12
8
C rs s
4
A
0 0.0 1.0 2.0
FO R TES T C IR CU IT SEE FIG U R E 9
3.0 4.0 5.0
A
V D S , Drain-to-Source V oltage (V)
Q G , Total Gate Charge (nC )
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
10
100
I S D , R e v e rse D ra in C u rre n t (A )
O PER ATIO N IN T HIS AR EA LIMITE D BY R DS (on)
TJ = 1 50 C
I D , D ra in C u rre n t (A )
10 10 s
1
TJ = 2 5C
1 00 s 1 1 ms
0.1 0.4 0.6 0.8 1.0
VG S = 0 V
1.2
A
0.1 1
T A = 25 C T J = 15 0C S in gle Pu lse
10
10 ms
A
100
1.4
V S D , Source-to-D rain V oltage (V )
V D S , D rain-to-S ource Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
IRLML2803
QG
VDS VGS
RD
10V
QGS VG QGD
D.U.T.
+
RG
- VDD
10V
Charge
Pulse Width 1 s Duty Factor 0.1 %
Fig 9a. Basic Gate Charge Waveform
Current Regulator Same Type as D.U.T.
Fig 10a. Switching Time Test Circuit
VDS
50K 12V .2F .3F
90%
D.U.T. VGS
3mA
+ V - DS
10% VGS
td(on)
IG ID
tr
t d(off)
tf
Current Sampling Resistors
Fig 9b. Gate Charge Test Circuit
1000
Fig 10b. Switching Time Waveforms
(Z thJA )
100
D = 0.50 0.20 0.10
Thermal Response
10
0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) PDM t1 t2 Notes: 1. Duty factor D = t1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.0001 0.001 0.01 0.1 1 10 100
1
0.1 0.00001
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
IRLML2803
Peak Diode Recovery dv/dt Test Circuit
D.U.T
+
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
-
+
RG * * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test
+ VDD
Driver Gate Drive P.W. Period D=
P.W. Period VGS=10V
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
VDD
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
ISD
* V GS = 5V for Logic Level Devices Fig 12. For N-Channel HEXFETS
IRLML2803
Package Outline
SOT-23 Outline Dimensions are shown in millimeters (inches)
D -B3
L E A D A S S IG N M E N TS 1 - G A TE 2 - S O U R CE 3 - D R A IN
H 2 0 . 20 ( .0 0 8 ) M A M
D IM A A1 B C D e e1
IN C H E S M IN . 03 2 . 00 1 . 01 5 .0 0 4 .1 0 5 MAX . 04 4 . 00 4 . 02 1 .0 0 6 .1 2 0
M IL L IM E T E R S M IN 0 .8 2 0 .0 2 0 .3 8 0 .1 0 2 .6 7 MAX 1 .1 1 0 .1 0 0 .5 4 0 .1 5 3 .0 5
3
E -A -
3 1
. 07 5 0 B A S IC . 03 7 5 B A S IC . 04 7 .0 8 3 . 00 5 0 .0 55 .0 9 8 .0 1 0 8
1. 9 0 B A S IC 0 .9 5 B A S IC 1 .2 0 2 .1 0 0 .1 3 0 1 .4 0 2 .5 0 0 .2 5 8
e e1 0. 00 8 (.0 0 3 ) L 3X C 3X
E H L A
-C B 3X 0. 1 0 (.0 0 4 ) M A1 C AS B S
M IN IM U M R E C O M M E N D E D F O O T P R IN T 0 .8 0 ( .0 3 1 ) 3X 0 .9 0 ( .0 3 5 ) 2 .0 0 3X ( .0 7 9 )
NOTES: 1 . D I M E N S IO N IN G & T O L E R A N C I N G PE R A N S I Y 1 4 .5 M -1 9 8 2. 2 . C O N T R O L L IN G D IM E N S IO N : IN C H . 3 D I M E N S IO N S D O N O T IN C L U D E M O LD F L A S H .
0 . 95 ( .0 3 7 ) 2X
Part Marking Information
SOT-23
E X A M P L E : T H IS IS A N IR L M L 6 30 2 W ORK W EE K 01 02 03 04 YEA R 2001 2002 2003 1994 1995 1996 1997 1998 1999 2000 Y A B C D E F G H J K WO RK W E EK 27 28 29 30 W A B C D
PAR T NU MB ER
1C
Y = YEAR C O DE W = W E EK CO D E
YW
DAT E CODE
YE AR 2001 2002 2003 1994 1995 1996 1997 1998 1999 2000
Y 1 2 3 4 5 6 7 8 9 0
W A B C D
TOP
P ART NUM BE R EX AMP LES: 1 A = IR L M L 24 0 2 1 B = IR L M L 28 0 3 1 C = IR L M L 63 0 2 1 D = IR L M L 51 0 3
DAT E CO DE E XAM PLES : YW W = 9503 = 5C YW W = 9532 = EF
24 25 26
X Y Z
50 51 52
X Y Z
W O R K W E E K = (1 -2 6 ) IF P R E C E D E D B Y L A S T D IG IT O F C A LE N D E R Y E A R W O R K W E E K = ( 2 7 -52 ) IF P R E C E D E D B Y L E T T E R
IRLML2803
Tape & Reel Information
SOT-23 Dimensions are shown in millimeters (inches)
2 .0 5 ( .0 8 0 ) 1 .9 5 ( .0 7 7 ) 4 .1 ( .1 6 1 ) 3 .9 ( .1 5 4 ) 1.6 ( .06 2 ) 1.5 ( .06 0 ) 1.3 2 ( .0 5 1 ) 1.1 2 ( .0 4 5 )
1 .8 5 ( .0 7 2 ) 1 .6 5 ( .0 6 5 )
TR
3.5 5 ( . 13 9 ) 3.4 5 ( . 13 6 )
8 .3 ( .3 2 6 ) 7 .9 ( .3 1 2 )
F E E D D IR E C T IO N
4 .1 ( .1 6 1 ) 3 .9 ( .1 5 4 )
1 .1 ( .0 4 3 ) 0 .9 ( .0 3 6 )
0 .3 5 ( .0 1 3 ) 0 .2 5 ( .0 1 0 )
17 8 .0 0 ( 7 .0 0 8 ) M AX .
9 .9 0 ( .3 9 0 ) 8 .4 0 ( .3 3 1 ) N O TE S : 1 . C O N T R O L L IN G D IM E N S IO N : M IL L IM E TE R . 2 . O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 4 1.
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com/ Data and specifications subject to change without notice. 8/97

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