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| PD - 9.1259D IRLML6302 HEXFET(R) Power MOSFET l l l l l l l Generation V Technology Ultra Low On-Resistance P-Channel MOSFET SOT-23 Footprint Low Profile (<1.1mm) Available in Tape and Reel Fast Switching D VDSS = -20V G RDS(on) = 0.60 S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. A customized leadframe has been incorporated into the standard SOT-23 package to produce a HEXFET Power MOSFET with the industry's smallest footprint. This package, dubbed the Micro3, is ideal for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the Micro3 allows it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards. M icro3 Absolute Maximum Ratings Parameter ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C VGS dv/dt TJ,TSTG Continuous Drain Current, VGS @ -4.5V Continuous Drain Current, VGS @ -4.5V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Junction and Storage Temperature Range Max. -0.78 -0.62 -4.9 540 4.3 12 -5.0 -55 to + 150 Units A mW mW/C V V/ns C Thermal Resistance Parameter RJA Maximum Junction-to-Ambient Typ. --- Max. 230 Units C/W 8/25/97 IRLML6302 Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS V(BR)DSS/TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance RDS(ON) VGS(th) gfs IDSS I GSS Qg Q gs Q gd t d(on) tr t d(off) tf Ciss Coss Crss Min. -20 --- --- --- -0.70 0.56 --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- -4.9 --- --- --- --- --- --- --- --- 2.4 0.56 1.0 13 18 22 22 97 53 28 Max. Units Conditions --- V VGS = 0V, ID = -250A --- mV/C Reference to 25C, I D = -1mA 0.60 VGS = -4.5V, ID = -0.61A 0.90 VGS = -2.7V, ID = -0.31A --- V VDS = VGS, ID = -250A --- S VDS = -10V, ID = -0.31A -1.0 VDS = -16V, VGS = 0V A -25 VDS = -16V, VGS = 0V, TJ = 125C -100 VGS = -12V nA 100 VGS = 12V 3.6 ID = -0.61A 0.84 nC V DS = -16V 1.5 VGS = -4.5V, See Fig. 6 and 9 --- VDD = -10V --- I D = -0.61A ns --- RG = 6.2 --- RD = 16, See Fig. 10 --- VGS = 0V --- pF VDS = -15V --- = 1.0MHz, See Fig. 5 Source-Drain Ratings and Characteristics IS ISM VSD t rr Q rr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Min. Typ. Max. Units --- --- --- --- --- --- -0.54 A --- --- 35 26 -4.9 -1.2 53 39 V ns nC Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25C, IS = -0.61A, VGS = 0V TJ = 25C, IF = -0.61A di/dt = 100A/s D S Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) Pulse width 300s; duty cycle 2%. Surface mounted on FR-4 board, t 5sec. ISD -0.61A, di/dt 76A/s, VDD V(BR)DSS, TJ 150C IRLML6302 10 VGS - 7.5V - 5.0V - 4.0V - 3.5V - 3.0V - 2.5V - 2.0V BOTT OM - 1.5V TOP 10 -I D , D ra in -to -S o u rc e C u rre n t (A ) -ID , D ra in -to -S o u rce C u rre n t (A ) VGS - 7.5V - 5.0V - 4.0V - 3.5V - 3.0V - 2.5V - 2.0V BOTT OM - 1.5V TOP 1 1 0.1 0.1 -1 .5 V 20 s P UL SE W IDTH TJ = 150 C 0.1 1 10 0.01 0.1 -1.5 V 1 20 s P U LSE W IDTH TJ = 25 C A 10 0.01 A -VD S , D rain-to-S ource V oltage (V ) -VD S , Drain-to-Source V oltage (V ) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 10 2.0 -I D , D rain -to- S our ce C urr ent ( A ) T J = 25 C R D S (o n ) , D ra in -to -S o u rc e O n R e si sta n ce (N o rm a li ze d ) I D = -0.61 A 1.5 T J = 1 5 0 C 1 1.0 0.1 0.5 0.01 1.5 2.0 2.5 3.0 V DS = -1 0 V 2 0 s P U L S E W ID T H 3.5 4.0 4.5 A 0.0 -60 -40 -20 0 20 40 60 80 V G S = -4.5 V 100 120 140 160 A -VG S , Ga te-to-S o urce V oltage (V ) T J , Junction T emperature (C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature IRLML6302 180 160 140 -V G S , G a te -to -S o u rce V o lta g e (V ) V GS C is s C rs s C os s = = = = 0V , f = 1MH z C gs + C g d , Cds SH OR TED Cgd C ds + C gd 10 I D = -0.6 1A VD S = -16 V C iss C os s 8 C , C a p a c ita n c e (p F ) 120 100 80 60 40 20 0 1 6 C rss 4 2 A 10 100 0 0.0 1.0 2.0 FO R TEST C IR C U IT SEE F IGU R E 9 3.0 A 4.0 -VD S , Drain-to-Source V oltage (V) Q G , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 10 10 -IS D , R e ve rse D ra in C u rre n t (A ) O PER ATION IN TH IS AR EA LIM ITE D BY R D S( on) -I D , D ra in C u rre n t (A ) 1 100 s TJ = 1 50C T J = 2 5C 0.1 1 1m s 10m s 0.01 0.4 0.6 0.8 1.0 VG S = 0 V 1.2 A 0.1 1 T A = 25 C T J = 15 0C S ing le Pulse 10 1.4 A 100 -VS D , S ource-to-Drain V oltage (V ) -V D S , D rain-to-S ource Voltage (V ) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area IRLML6302 QG VDS VGS RD -4.5V QGS VG QGD D.U.T. + -4.5V Pulse Width 1 s Duty Factor 0.1 % Charge Fig 9a. Basic Gate Charge Waveform Current Regulator Same Type as D.U.T. Fig 10a. Switching Time Test Circuit VDS 50K 12V .2F .3F 90% VGS -3mA IG ID Current Sampling Resistors Fig 9b. Gate Charge Test Circuit 1000 (Z thJA ) 100 D = 0.50 0.20 0.10 Thermal Response 10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) PDM t1 t2 Notes: 1. Duty factor D = t1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.0001 0.001 0.01 0.1 1 10 100 1 0.1 0.00001 Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient + D.U.T. VDS 10% VGS td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms t1, Rectangular Pulse Duration (sec) - RG VDD - IRLML6302 Peak Diode Recovery dv/dt Test Circuit D.U.T + + Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer - + RG VGS* ** * dv/dt controlled by RG * ISD controlled by Duty Factor "D" * D.U.T. - Device Under Test + - VDD * * Reverse Polarity for P-Channel ** Use P-Channel Driver for P-Channel Measurements Driver Gate Drive P.W. Period D= P.W. Period [VGS=10V ] *** D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt [VDD] Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple 5% [ISD ] *** VGS = 5.0V for Logic Level and 3V Drive Devices Fig 13. For P-Channel HEXFETS IRLML6302 Package Outline SOT-23 Outline Dimensions are shown in millimeters (inches) D -B3 L E A D A S S IG N M E N TS 1 - G A TE 2 - S O U R CE 3 - D R A IN H 2 0 . 20 ( .0 0 8 ) M A M D IM A A1 B C D e e1 IN C H E S M IN . 03 2 . 00 1 . 01 5 .0 0 4 .1 0 5 MAX . 04 4 . 00 4 . 02 1 .0 0 6 .1 2 0 M IL L IM E T E R S M IN 0 .8 2 0 .0 2 0 .3 8 0 .1 0 2 .6 7 MAX 1 .1 1 0 .1 0 0 .5 4 0 .1 5 3 .0 5 3 E -A - 3 1 . 07 5 0 B A S IC . 03 7 5 B A S IC . 04 7 .0 8 3 . 00 5 0 .0 55 .0 9 8 .0 1 0 8 1. 9 0 B A S IC 0 .9 5 B A S IC 1 .2 0 2 .1 0 0 .1 3 0 1 .4 0 2 .5 0 0 .2 5 8 e e1 0. 00 8 (.0 0 3 ) L 3X C 3X E H L A -C B 3X 0. 1 0 (.0 0 4 ) M A1 C AS B S M IN IM U M R E C O M M E N D E D F O O T P R IN T 0 .8 0 ( .0 3 1 ) 3X 0 .9 0 ( .0 3 5 ) 2 .0 0 3X ( .0 7 9 ) NOTES: 1 . D I M E N S IO N IN G & T O L E R A N C I N G PE R A N S I Y 1 4 .5 M -1 9 8 2. 2 . C O N T R O L L IN G D IM E N S IO N : IN C H . 3 D I M E N S IO N S D O N O T IN C L U D E M O LD F L A S H . 0 . 95 ( .0 3 7 ) 2X Part Marking Information SOT-23 E X A M P L E : T H IS IS A N IR L M L 6 30 2 W ORK W EE K 01 02 03 04 YEA R 2001 2002 2003 1994 1995 1996 1997 1998 1999 2000 Y A B C D E F G H J K WO RK W E EK 27 28 29 30 W A B C D PAR T NU MB ER 1C Y = YEAR C O DE W = W E EK CO D E YW DAT E CODE YE AR 2001 2002 2003 1994 1995 1996 1997 1998 1999 2000 Y 1 2 3 4 5 6 7 8 9 0 W A B C D TOP P ART NUM BE R EX AMP LES: 1 A = IR L M L 24 0 2 1 B = IR L M L 28 0 3 1 C = IR L M L 63 0 2 1 D = IR L M L 51 0 3 DAT E CO DE E XAM PLES : YW W = 9503 = 5C YW W = 9532 = EF 24 25 26 X Y Z 50 51 52 X Y Z W O R K W E E K = (1 -2 6 ) IF P R E C E D E D B Y L A S T D IG IT O F C A LE N D E R Y E A R W O R K W E E K = ( 2 7 -52 ) IF P R E C E D E D B Y L E T T E R IRLML6302 Tape & Reel Information SOT-23 Dimensions are shown in millimeters (inches) 2 .0 5 ( .0 8 0 ) 1 .9 5 ( .0 7 7 ) 4 .1 ( .1 6 1 ) 3 .9 ( .1 5 4 ) 1.6 ( .06 2 ) 1.5 ( .06 0 ) 1.3 2 ( .0 5 1 ) 1.1 2 ( .0 4 5 ) 1 .8 5 ( .0 7 2 ) 1 .6 5 ( .0 6 5 ) TR 3.5 5 ( . 13 9 ) 3.4 5 ( . 13 6 ) 8 .3 ( .3 2 6 ) 7 .9 ( .3 1 2 ) F E E D D IR E C T IO N 4 .1 ( .1 6 1 ) 3 .9 ( .1 5 4 ) 1 .1 ( .0 4 3 ) 0 .9 ( .0 3 6 ) 0 .3 5 ( .0 1 3 ) 0 .2 5 ( .0 1 0 ) 17 8 .0 0 ( 7 .0 0 8 ) M AX . 9 .9 0 ( .3 9 0 ) 8 .4 0 ( .3 3 1 ) N O TE S : 1 . C O N T R O L L IN G D IM E N S IO N : M IL L IM E TE R . 2 . O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 4 1. WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com/ Data and specifications subject to change without notice. 8/97 |
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