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| PD- 93758C IRLMS2002 HEXFET(R) Power MOSFET l l l l l Ultra Low On-Resistance N-Channel MOSFET Surface Mount Available in Tape & Reel 2.5V Rated D D G 1 6 A D VDSS = 20V 2 5 D S 3 4 RDS(on) = 0.030 Description These N-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. The Micro6 package with its customized leadframe produces a HEXFET power MOSFET with RDS(on) 60% less than a similar size SOT-23. This package is ideal for applications where printed circuit board space is at a premium. It's unique thermal design and RDS(on) reduction enables a current-handling increase of nearly 300% compared to the SOT-23. T o p V ie w Micro6 Absolute Maximum Ratings Parameter VDS ID @ TA = 25C ID @ TA= 70C IDM PD @TA = 25C PD @TA = 70C VGS TJ, TSTG Drain- Source Voltage Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range Max. 20 6.5 5.2 20 2.0 1.3 0.016 12 -55 to + 150 Units V A W W/C V C Thermal Resistance Parameter RJA Maximum Junction-to-Ambient Max. 62.5 Units C/W www.irf.com 1 02/16/01 IRLMS2002 Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS V(BR)DSS/TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Min. 20 --- --- --- 0.60 13 --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- 0.016 --- --- --- --- --- --- --- --- 15 2.2 3.5 8.5 11 36 16 1310 150 36 Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, I D = 1mA 0.030 VGS = 4.5V, ID = 6.5A 0.045 VGS = 2.5V, ID = 5.2A 1.2 V VDS = V GS, ID = 250A --- S VDS = 10V, ID = 6.5A 1.0 VDS = 16V, VGS = 0V A 25 VDS = 16V, V GS = 0V, TJ = 70C -100 VGS = -12V nA 100 VGS = 12V 22 ID = 6.5A 3.3 nC VDS = 10V 5.3 VGS = 5.0V --- VDD = 10V --- ID = 1.0A ns --- RG = 6.0 --- RD = 10 --- VGS = 0V --- pF VDS = 15V --- = 1.0MHz Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Min. Typ. Max. Units --- --- --- --- --- --- --- --- 19 13 2.0 A 20 1.2 29 20 V ns nC Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25C, IS = 1.7A, VGS = 0V TJ = 25C, I F = 1.7A di/dt = 100A/s D S Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) Surface mounted on FR-4 board, t 5sec. Pulse width 400s; duty cycle 2%. 2 www.irf.com IRLMS2002 100 I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) VGS 7.50V 5.00V 4.00V 3.50V 3.00V 2.50V 2.00V BOTTOM 1.50V TOP 100 VGS 7.50V 5.00V 4.00V 3.50V 3.00V 2.50V 2.00V BOTTOM 1.50V TOP 10 10 1.50V 20s PULSE WIDTH T = 150 C J 1 10 100 1.50V 1 0.1 20s PULSE WIDTH T = 25 C J 10 100 1 1 0.1 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 2.0 ID = 5.3A TJ = 25 C TJ = 150 C 10 R DS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) 1.5 1.0 0.5 1 1.5 V DS = 15V 20s PULSE WIDTH 3.0 2.0 2.5 3.5 0.0 -60 -40 -20 VGS = 4.5V 0 20 40 60 80 100 120 140 160 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRLMS2002 2000 1600 VGS , Gate-to-Source Voltage (V) VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 10 ID = 6.5A 5.3A 8 VDS = 10V C, Capacitance (pF) C iss 1200 6 800 4 400 2 0 1 C oss C rss 10 100 0 0 4 8 12 16 20 24 VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 100 OPERATION IN THIS AREA LIMITED BY R DS(on) ISD , Reverse Drain Current (A) 10 TJ = 150 C I D , Drain Current (A) 10 1ms 1 TJ = 25 C 0.1 0.4 V GS = 0 V 0.6 0.8 1.0 1.2 1 0.1 TA = 25 C TJ = 150 C Single Pulse 1 10 10ms 100 VSD ,Source-to-Drain Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRLMS2002 6.0 0.20 5.0 0.10 I D , Drain Current (A) VGS(th) , Variace ( V ) 4.0 0.00 Id = 250A -0.10 3.0 2.0 -0.20 1.0 -0.30 -0.40 0.0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 TC , Case Temperature ( C) T J , Temperature ( C ) Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10. Typical Vgs(th) Variance Vs. Juction Temperature 100 Thermal Response (Z thJA ) D = 0.50 0.20 10 0.10 0.05 0.02 1 0.01 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 0.0001 0.001 0.01 0.1 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 1 10 100 P DM t1 t2 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 IRLMS2002 R DS ( on) , Drain-to-Source On Resistance ( ) 0.040 0.10 R DS(on) , Drain-to -Source Voltage ( ) 0.035 0.08 0.030 0.06 0.025 Id = 5.3A 0.04 VGS= 2.5V VGS = 4.5V 0.020 2.0 3.0 4.0 5.0 6.0 7.0 8.0 0.02 0 10 20 30 40 VGS, Gate -to -Source Voltage ( V ) ID, - Drain Current (A ) Fig 12. Typical On-Resistance Vs. Gate Voltage Fig 13. Typical On-Resistance Vs. Drain Current 6 www.irf.com IRLMS2002 Micro6 Package Outline 3 .00 (. 1 1 8 ) 2 .80 (. 1 1 1 ) LEA D ASSIG N M EN T S -B D D S R EC O M ME ND E D FO O T PR IN T 2 X 0. 9 5 (.0 37 5 ) 6X (1 .0 6 (. 04 2 ) 1. 75 (.0 68 ) 1. 50 (.0 60 ) -A - 6 1 5 2 4 3.0 0 (.1 18 ) 2.6 0 (.1 03 ) 3 6 1 5 2 4 3 2.2 0 (.0 87 ) 0 .9 5 ( .0 37 5 ) 2X 0 .1 5 6X D 0 .5 0 (.01 9 ) 0 .3 5 (.01 4 ) D G 6 X 0. 6 5 (. 02 5 ) (.0 06 ) M C A S B S 0 -1 0 1.3 0 (.0 51 ) 0.9 0 (.0 36 ) -C 0 .1 5 (. 00 6 ) M AX. 1 .45 (. 05 7 ) 0 .90 (. 03 6 ) 0. 10 (.0 0 4 ) 6 SU R FAC E S O O 6X 0 .2 0 (. 00 7 ) 0 .0 9 (. 00 4 ) 0 .60 (. 02 3 ) 0 .10 (. 00 4 ) N O TE S : 1. D IM E N S IO N IN G & T O LE R A N C IN G PE R A NS I Y 14 .5 M -1 9 82 . 2. C O NT R O LL IN G D I M E NS IO N : M IL LI M E T E R . 3. D IM E N S IO N S A R E S HO W N I N M IL LIM E T E R S (IN C H E S ). Micro6 Part Marking Information T HIS IS AN IRLMS 6702 WW = (1-26) IF PRECEDED BY LAS T DIGIT OF CALENDAR YEAR YEAR PART NUMBER DATE CODE 2001 2002 2003 2004 2005 1996 1997 1998 1999 2000 Y 1 2 3 4 5 6 7 8 9 0 WORK WEEK 01 02 03 04 W A B C D 2C YW T OP WAFER LOT NUMBER CODE XXXX BOTT OM 24 25 26 X Y Z PART NUMBER CODE REF ERENCE: 2A = IRLMS 1902 2B = IRLMS 1503 2C = IRLMS 6702 2D = IRLMS 5703 2E = IRLMS 6802 2F = IRLMS 4502 2G = IRLMS 2002 2H = IRLMS 6803 WW = (27-52) IF PRECEDED BY A LETT ER YEAR 2001 2002 2003 2004 2005 1996 1997 1998 1999 2000 Y A B C D E F G H J K WORK WEEK 27 28 29 30 W A B C D DATE CODE EXAMPLES : YWW = 9603 = 6C YWW = 9632 = FF 50 51 52 X Y Z www.irf.com 7 IRLMS2002 Micro6 Tape & Reel Information 8mm 4m m F EE D D IR E C T IO N N O TE S : 1 . O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 4 1 . 17 8.00 ( 7 .0 08 ) MAX. 9 .9 0 ( .3 90 ) 8 .4 0 ( .3 31 ) NO TES: 1. C O N T R O L LIN G D IM EN S IO N : M ILL IM E T E R . 2. O U T L IN E C O N F O R M S T O EIA -481 & E IA -5 41. This product has been designed and qualified for the consumer market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 02/01 8 www.irf.com |
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