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 Replaced by PVA33N
Data Sheet No. PD10021E
Series PVA33
Microelectronic Power IC
BOSFET(R) Photovoltaic Relay
Single-Pole, 130mA, 0-300V AC/DC
General Description
The Photovoltaic AC Relay (PVA) is a single-pole, normally open solid state replacement for electromechanical relays used for general purpose switching of analog signals. It utilizes as an output switch a unique bidirectional (AC or DC) MOSFET power IC termed a BOSFET. The BOSFET is controlled by a photovoltaic generator of novel construction, which is energized by radiation from a dielectrically isolated light emitting diode (LED). The PVA overcomes the limitations of both conventional and reed electromechanical relays by offering the solid state advantages of long life, high operating speed, low pick-up power, bounce-free operation, low thermal voltages and miniaturization. These advantages allow product improvement and design innovations in many applications such as process control, multiplexing, telecommunications, automatic test equipment and data acquisition. The PVA can switch analog signals from thermocouple level to 300 volts peak AC or DC polarity. Signal frequencies into the RF range are easily controlled and switching rates up to 5kHz are achievable. The extremely small thermally generated offset voltages allow increased measurement accuracies. Unique silicon technology developed by International Rectifier forms the heart of the PVA. The monolithic BOSFET contains a bidirectional N-channel power MOSFET output structure. In addition, this power IC chip has input circuitry for fast turn-off and gate protection functions. This section of the BOSFET chip utilizes both bipolar and MOS technology to form NPN transistors, P-channel MOSFETs, resistors, diodes and capacitors. The photovoltaic generator similarly utilizes a unique International Rectifier alloyed multijunction structure. The excellent current conversion efficiency of this technique results in the very fast response of the PVA microelectronic power IC relay. This advanced semiconductor technology has created a radically new control device. Designers can now develop switching systems to new standards of electrical performance and mechanical compactness.
Features
BOSFET Power IC 1010 Operations 100sec Operating Time 0.2Volt Thermal Offset 3 milliwatts Pick-Up Power 1000V/sec dv/dt Bounce-Free 8-pin DIP Package -40C to 85C UL recognized
s s s s s s s s s s
TE LE SO OB
Part Identification
Part Number PVA2352 PVA3324 PVA3354 Operating Voltage (AC/DC) 0 - 200V 0 - 300V Sensitivity 5mA 2 mA 5mA
Off-State Resistance 108 Ohms 1010 Ohms
(BOSFET is a trademark of International Rectifier)
5AHEAI 8)!! 2
Replaced by PVA33N
Electrical Specifications (-40C TA +85C unless otherwise specified) INPUT CHARACTERISTICS
Minimum Control Current (see figures 1 and 2) For 20mA Continuous Load Current For 100mA Continuous Load Current For 10mA Continuous Load Current Maximum Control Current for Off-State Resistance at 25C Control Current Range (Caution: current limit input LED. See figure 6) Maximum Reverse Voltage
PVA2352 PVA3324 PVA3354
2.0 5.0 5.0 1.0 2.0 2.0 10 2.0 to 25 7.0 2.0 5.0 5.0
Units
DC mA@25C mA@25C mA@85C A(DC) mA(DC) V(DC)
OUTPUT CHARACTERISTICS
Operating Voltage Range
Maxiumum Load Current 40C (see figures 1and 2)
Max. On-state Resistance 25C (Pulsed) (fig. 4) 50 mA Load, 5mA Control Min. Off-state Resistance @ 25C (see figure 5) Response Time @25C (see figures 7 and 8)
Max. T(on) @ 12mA Control, 50 mA Load, 100 VDC Max. T(off) @ 12mA Control, 50 mA Load, 50 VDC Max. Thermal Offset Voltage @ 5.0mA Control Min. Off-State dv/dt Output Capacitance (see figure 10)
TE LE SO B O
PVA2352 PVA3324 PVA3354
0 to 300 130 24 0 to 200 10 8@160VDC 1010 @ 240VDC 100 50 s s 0.2 1000 12 2500 1012 @ 25C - 50% RH 1.0 +260 -40 to +85 -40 to +100 C pF
Units
V(PEAK) mA(DC)
volts V/s pF @ 50VDC
GENERAL CHARACTERISTICS (PVA2352, PVA3324 and PVA3354)
Dielectric Strength: Input-Output Insulation Resistance: Input-Output @ 90V DC Maximum Capacitance: Input-Output Max. Pin Soldering Temperature (1.6mm below seating plane, 10 seconds max.) Ambient Temperature Range: Operating Storage
Units
VRMS
2
Replaced by PVA33N
5AHEAI 8)!! 2
Max. Load Current (mA)
Figure 1. Current Derating Curves
TE LE SO OB
Ambient Temperature (C) Ambient Temperature (C) Figure 2. Current Derating Curves
RDD(on) (Ohms)
Load Current (mA)
Max. Load Current (mA)
Voltage Drop (V DD) Figure 3.Typical On Characteristics
Ambient Temperature (C) Figure 4. Typical On-Resistance
3
5AHEAI 8)!! 2
Replaced by PVA33N
Ambient Temperature (C)
Figure 5. Normalized Off-State Leakage
TE LE SO B O
LED Forward Voltage Drop (Volts DC) Figure 6. Input Characteristics (Current Controlled)
ILED (mA)
Delay Time (microseconds) Figure 7.Typical Delay Times Figure 8. Delay Time Definitions
4
Input Current (mA)
IDOff/IDOff 25C
Replaced by PVA33N
5AHEAI 8)!! 2
Figure 9. Typical Control Threshold and Transfer Ratio
TE LE SO OB
Ambient Temperature C VDD Drain to Drain Voltage
Typical Capacitance (picofarads)
Normalized Transfer Ratio
Figure 10. Typical Output Capacitance
Wiring Diagram
5
5AHEAI 8)!! 2
Replaced by PVA33N
Case Outline
(Dimensions in millimeters (inches))
TE LE SO B O
Mechanical Specifications:
Package: 8-pin DIP Tolerances: .015 (.38) unless otherwise specified Case Material: molded epoxy Weight: .07 oz. (2 gr.)
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105
http://www.irf.com/ Data and specifications subject to change without notice.
12/6/2000
6


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