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Bulletin I25179 rev. C 12/96
ST183S SERIES
INVERTER GRADE THYRISTORS Stud Version
Features
All diffused design Center amplifying gate Guaranteed high dv/dt Guaranteed high di/dt High surge current capability Low thermal impedance High speed performance
195A
Typical Applications
Inverters Choppers Induction heating All types of force-commutated converters
Major Ratings and Characteristics
Parameters
IT(AV) @ TC IT(RMS) ITSM @ 50Hz @ 60Hz I2t @ 50Hz @ 60Hz V DRM/V RRM tq range TJ
ST183S
195 85 306 4900 5130 120 110 400 to 800 10 to 20 - 40 to 125
Units
A C A A A KA2s KA2s V s C
case style TO-209AB (TO-93)
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1
ST183S Series
Bulletin I25179 rev. C 12/96
ELECTRICAL SPECIFICATIONS Voltage Ratings
Voltage Type number Code VDRM /VRRM , maximum repetitive peak voltage V
ST183S 04 08 400 800
VRSM , maximum non-repetitive peak voltage V
500 900
I DRM/I RRM max.
@ TJ = TJ max.
mA
40
Current Carrying Capability
Frequency
180oel 50Hz 400Hz 1000Hz 2500Hz Recovery voltage Vr Voltage before turn-on Vd Rise of on-state current di/dt Case temperature Equivalent values for RC circuit 570 560 500 340 50 VDRM 50 60
ITM 180 el 370 360 300 190 50 50 85 900 940 925 760 50 VDRM 60
o
ITM 100s 610 630 610 490 50 85 7040 3200 1780 880 50 V DRM 60
ITM
Units
5220 2280 1200 560 50 85 V A/s C A
47 / 0.22F
47 / 0.22F
47 / 0.22F
On-state Conduction
Parameter
IT(AV) Max. average on-state current @ Case temperature IT(RMS) Max. RMS on-state current ITSM Max. peak, one half cycle, non-repetitive surge current
ST183S
195 85 306 4900 5130 4120 4310
Units
A C
Conditions
180 conduction, half sine wave DC @ 74C case temperature t = 10ms No voltage reapplied 100% VRRM reapplied No voltage reapplied 100% VRRM reapplied Sinusoidal half wave, Initial TJ = TJ max
A
t = 8.3ms t = 10ms t = 8.3ms t = 10ms t = 8.3ms
I 2t
Maximum I2t for fusing
120 110 85 78 KA2s
t = 10ms t = 8.3ms
I 2 t
Maximum I2t for fusing
1200
KA2 s
t = 0.1 to 10ms, no voltage reapplied
2
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ST183S Series
Bulletin I25179 rev. C 12/96
On-state Conduction
Parameter
V TM Max. peak on-state voltage
ST183S
1.80 1.40 1.45 0.67
Units
Conditions
ITM= 600A, TJ = TJ max, tp = 10ms sine wave pulse
V T(TO)1 Low level value of threshold voltage V T(TO)2 High level value of threshold voltage r t1 r t2 IH IL Low level value of forward slope resistance High level value of forward slope resistance Maximum holding current Typical latching current
V
(16.7% x x IT(AV) < I < x IT(AV)), TJ = TJ max. (I > x I T(AV)), TJ = TJ max. (16.7% x x IT(AV) < I < x IT(AV)), TJ = TJ max. (I > x IT(AV)), T J = TJ max.
m 0.58 600 1000 mA
T J = 25C, I T > 30A T J = 25C, VA = 12V, Ra = 6, I G = 1A
Switching
Parameter
di/dt Max. non-repetitive rate of rise of turned-on current t
d
ST183S
1000 1.1 Min 10 Max 20
Units
A/s
Conditions
TJ = TJ max, VDRM = rated VDRM ITM = 2 x di/dt TJ = 25C, VDM = rated VDRM, ITM = 50A DC, tp= 1s Resistive load, Gate pulse: 10V, 5 source TJ = TJ max, ITM = 300A, commutating di/dt = 20A/s VR = 50V, tp = 500s, dv/dt: see table in device code
Typical delay time
s
tq
Max. turn-off time
Blocking
Parameter
dv/dt IRRM IDRM Maximum critical rate of rise of off-state voltage Max. peak reverse and off-state leakage current
ST183S
500 40
Units
V/s mA
Conditions
TJ = TJ max., linear to 80% V DRM, higher value available on request TJ = TJ max, rated V DRM/V RRM applied
Triggering
Parameter
PGM Maximum peak gate power
ST183S
60 10 10 20
Units
W A
Conditions
TJ = TJ max, f = 50Hz, d% = 50 TJ = TJ max, tp 5ms
PG(AV) Maximum average gate power IGM +VGM -V GM IGT VGT IGD VGD Max. peak positive gate current Maximum peak positive gate voltage Maximum peak negative gate voltage Max. DC gate current required to trigger Max. DC gate voltage required to trigger Max. DC gate current not to trigger Max. DC gate voltage not to trigger
V 5 200 3 20 0.25 mA
T J = TJ max, tp 5ms
T J = TJ max, VA = 12V, Ra = 6 V mA V T J = TJ max, rated VDRM applied
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ST183S Series
Bulletin I25179 rev. C 12/96
Thermal and Mechanical Specifications
Parameter
TJ Tstg RthJC RthCS T Max. junction operating temperature range Max. storage temperature range Max. thermal resistance, junction to case Max. thermal resistance, case to heatsink Mounting torque, 10%
ST183S
-40 to 125 -40 to 150 0.105 0.04 31 (275) 24.5 (210)
Units
C
Conditions
DC operation K/W Nm (Ibf-in) Nm (Ibf-in) g See Outline Table Non lubricated threads Lubricated threads Mounting surface, smooth, flat and greased
wt
Approximate weight Case style
280
TO-209AB (TO-93)
RthJC Conduction
(The following table shows the increment of thermal resistence RthJC when devices operate at different conduction angles than DC)
Conduction angle
180 120 90 60 30
Sinusoidal conduction Rectangular conduction Units
0.016 0.019 0.025 0.036 0.060 0.012 0.020 0.027 0.037 0.060 K/W
Conditions
TJ = TJ max.
Ordering Information Table
Device Code
ST
1
18
2
3
3
S
4
08
5
P
6
F
7
N
8
0
9 10
1 2 3 4 5 6 7 8 9
- Thyristor - Essential part number - 3 = Fast turn off - S = Compression bonding Stud - Voltage code: Code x 100 = VRRM (See Voltage Ratings table) - P = Stud base 3/4" 16UNF-2A M = Stud base metric threads M16 x 1.5 - Reapplied dv/dt code (for tq test condition) - tq code - 0 = Eyelet terminals (Gate and Aux. Cathode Leads) 1 = Fast-on terminals (Gate and Aux. Cathode Leads) 2 = Flag terminals (For Cathode and Gate Terminals) dv/dt - tq combinations available
dv/dt (V/s) 10 12 t q(s) 15 18 20 20 CN CM CL CP CK 50 DN DM DL DP DK 100 EN EM EL EP EK 200 FN * FM FL * FP FK 400 HN HM HL HP HK
10 - Critical dv/dt: None = 500V/sec (Standard value) L = 1000V/sec (Special selection)
*Standard part number.
All other types available only on request.
4
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ST183S Series
Bulletin I25179 rev. C 12/96
Outline Table
CERAMIC HOUSING
19 (0.75) MAX. 4 (0.16) MAX. 8.5 (0.33) DIA.
(0 .3 9 .5 MI N.
4.3 (0.17) DIA.
7)
RED SILICON RUBBER 10 (0.39) C.S. 0.4mm 2 RED CATHODE (0.0006 s.i.) WHITE GATE
(0.039 s.i.)
22
FLEXIBLE LEAD C.S. 25mm 2
(0
.86
)M
IN .
Fast-on Terminals
AMP. 280000-1 REF-250
+I 210 (8.26)
90 (3.54) MIN.
RED SHRINK
220 (8.66) + 10 (0.39) WHITE SHRINK
38.5 (1 .52)
16 (0.63) MAX.
M AX.
27.5 (1.08) MAX. DIA.
27.5 (1.08)
MAX.
SW 32
Case Style TO-209AB (TO-93)
3/4"-16UNF-2A * 35 (1.38) MAX.
All dimensions in millimeters (inches)
* FOR METRIC DEVICE : M16 x 1.5 - LENGHT 21 (0.83) MAX.
CERAMIC HOUSING FLAG TERMINALS
22 (0.89) 14 (0.55) DIA. 6.5 (0.25) 13 (0.51)
80 ( 3.15) MAX.
1.5 (0.06) DIA.
38.5 (1.52) MAX.
DIA. 27.5 (1.08) MAX.
27.5 (1.08) MAX.
16 (0.63) MAX.
Case Style TO-209AB (TO-93) Flag
All dimensions in millimeters (inches)
SW 32
3/4"-16UNF-2A*
*FOR METRIC DEVICE. M16 X 1.5 - LENGHT 21 (0.83) MAX.
3 (0.12)
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5
ST183S Series
Bulletin I25179 rev. C 12/96
Maximum Allowable Case Temperat ure (C)
Maximum Allowable Case Temperat ure (C) 130 ST183S Series R thJC (DC) = 0.105 K/W 120
130 120 110 100 90 80 70 0 50
ST183S Series R thJC (DC) = 0.105 K/W
110
Conduction Angle
Conduction Period
100
30 60 90 120 180 DC 100 150 200 250 300 350
90
30
60
90
180 120
80 0 20 40 60 80 100 120 140 160 180 200 Average On-state Current (A)
Fig. 1 - Current Ratings Characteristics
Average On-state Current (A)
Fig. 2 - Current Ratings Characteristics
Maximum Average On-state Power Loss (W)
350
SA R th
300 250
180 120 90 60 30
0 .2
0.3
0. 4
6 0.1
K/ W
1 0. K/ W
200 RMS Limit
150
Conduction Angle
K/ W
K/ W
W K/
=0 .08 W K/ -D a elt R
0 .5
K/W
100 50 0
0
0 .8 K
/W 1.2 K/ W
ST183S Series TJ = 125C
20 40 60 80 100 120 140 160 180 200 25
50
75
100
125
Average On-state Current (A)
Maximum Allowable Ambient Temperature (C)
Fig. 3 - On-state Power Loss Characteristics
Maximum Average On-state Power Loss (W)
500 450 400 350 300 250 200 RMS Limit 150 100 50 0
0 50 100 150 200 250 300 350 25
Conduction Period
DC 180 120 90 60 30
R
th SA
0. 1
=
K/
0. 16 K
W
/W
0. 08
K/ W
-D
0 .2
0 .3
el
K/ W
ta
R
K/W 0.4 K/W
0. 5 K /W
ST183S Series TJ = 125C
0.8 K/ W
1.2 K/ W
50
75
100
125
Average On-state Current (A)
Maximum Allowable Ambient Temperature (C)
Fig. 4 - On-state Power Loss Characteristics
6
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ST183S Series
Bulletin I25179 rev. C 12/96
Peak Half Sine Wave On-state Current (A)
Peak Half Sine Wave On-state Current (A)
4500
4000
At Any Rated Load Condition And With Rated VRRM Applied Following Surge. Initial TJ = 125C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s
5000
3500
Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control 4500 Of Conduction May Not Be Maintained. Initial TJ = 125C No Voltage Reapplied 4000 Rated VRRM Reapplied 3500 3000 2500 2000 0.01
3000
2500 ST183S Series 2000 1 10 100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
ST183S Series
0.1 Pulse Train Duration (s)
1
Fig. 5 - Maximum Non-repetitive Surge Current
Transient Thermal Impedance Z thJC (K/W)
Fig. 6 - Maximum Non-repetitive Surge Current
1 Steady State Value R thJ C = 0.105 K/W (DC Operation) 0.1
10000 Instantaneous On-state Current (A) ST183S Series
TJ = 125C 1000 TJ = 25C
0.01 ST183S Series
100 1 1.5 2 2.5 3 3.5 4 Instantaneous On-state Voltage (V)
Fig. 7 - On-state Voltage Drop Characteristics
0.001 0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 8 - Thermal Impedance ZthJC Characteristic
Maximum Reverse Recovery Charge - Qrr (C)
I TM = 500 A
Maximum Reverse Recovery Current - Irr (A)
250 ST183S Series TJ = 125 C
160 140 120 100 80 60 40 20 0 0 20 40 60 80 100 Rate Of Fall Of On-state Current - di/dt (A/s)
Fig. 10 - Reverse Recovery Current Characteristics
I
TM
200
300 A 200 A 100 A
150
= 500 A 300 A 200 A 100 A 50 A
100
50 A
50
ST183S Series TJ = 125 C
0 0 20 40 60 80 100 Rate Of Fall Of On-state Current - di/dt (A/s)
Fig. 9 - Reverse Recovered Charge Characteristics
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ST183S Series
Bulletin I25179 rev. C 12/96
1E4
Peak On-state Current (A)
Snubber circuit R s = 47 ohms Cs = 0.22 F V D = 80% V DRM 1000 1500 500 400 200 100 50 Hz
1000 1500 2500 3000 5000 tp 500 400 200
Snubber circuit R s = 47 ohms C s = 0.22 F V D = 80% V DRM
100
50 Hz
1E3
2500 3000 5000 ST183S Series Sinusoidal pulse TC = 60C
tp
ST183S Series Sinusoidal pulse T C = 85C
1E2 1E1
1E2
1E3
1E4 1E1 1E4 1E1
1E2
1E3
1E4
Pulse Basewidth (s)
Fig. 11 - Frequency Characteristics
Pulse Basewidth (s)
1E4
Snubber circuit R s = 47 ohms C s = 0.22 F V D = 80% VDRM
Snubber circuit R s = 47 ohms C s = 0.22 F V D = 80% VDRM
Peak On-state Current (A)
1E3
2500 3000 5000
1500 1000 500
400 200 100
50 Hz
1500 2500 3000 1000 500
400 200 100
50 Hz
1E2
10000
ST183S Series Trapezoidal pulse TC = 60C di/dt = 50A/s
5000
10000
ST183S Series Trapezoidal pulse TC = 85C di/dt = 50A/s
1E1 1E1
1E2
1E3
1E4 1E1 1E4 1E1
1E2
1E3
1E4
Pulse Basewidth (s)
Fig. 12 - Frequency Characteristics
Pulse Basewidth (s)
1E4
Snubber circuit R s = 47 ohms C s = 0.22 F V D = 80% VDRM
Snubber circuit R s = 47 ohms C s = 0.22 F V D = 80% VDRM
Peak On-state Current (A)
1E3
2500 3000 5000 500 1500 1000
100 50 Hz 400 200
1500 2500 3000 400 200 1000 500
100
50 Hz
1E2
10000 tp
ST183S Series Trapezoidal pulse TC = 60C di/dt = 100A/s
5000 tp
10000
ST183S Series Trapezoidal pulse TC = 85C di/dt = 100A/s
1E1 1E1
1E2
1E3
1E4 1E1 1E4 1E1
1E2
1E3
1E4
Pulse Basewidth (s)
Fig. 13 - Frequency Characteristics
Pulse Basewidth (s)
8
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ST183S Series
Bulletin I25179 rev. C 12/96
1E5
ST183S Series Rectangular pulse
Peak On-state Current (A)
tp
di/dt = 50A/s 20 joules per pulse
1E4
2 5 10
20 jo ules per pulse 1
5 2 1 0.3 0.2 0.1 0.5
10
1E3
0.2 0.1
0.3
0.5
1E2
ST183S Series Sinusoidal pulse tp
1E1 1E1
1E2
1E3
1E4 1E1 1E4 1E1
1E2
1E3
1E4
Pulse Basewidth (s)
Pulse Basewidth (s)
Fig. 14 - Maximum On-state Energy Power Loss Characteristics
100 Instantaneous Gate Voltage (V) Rectangular gate pulse a) Recommended load line for rated di/dt : 20V, 10ohms; tr<=1 s b) Recommended load line for <=30% rated di/dt : 10V, 10ohms 10 tr<=1 s (b)
Tj=-40 C Tj=25 C Tj=125 C
(1) PGM = 10W, (2) PGM = 20W, (3) PGM = 40W, (4) PGM = 60W, (a)
tp = 20ms tp = 10ms tp = 5ms tp = 3.3ms
1 VGD IGD 0.1 0.001 0.01
(1)
(2)
(3) (4)
Device: ST183S Series 0.1 1
Frequency Limited by PG(AV) 10 100
Instantaneous Gate Current (A)
Fig. 15 - Gate Characteristics
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