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Bulletin I25200 rev. B 04/00
ST3230C..R SERIES
PHASE CONTROL THYRISTORS Hockey Puk Version
Features
Double side cooling High surge capability High mean current Fatigue free
3360A
Typical Applications
DC motor controls Controlled DC power supplies AC controllers
Major Ratings and Characteristics
Parameters
IT(AV) @ TC IT(AV) @ Ths IT(RMS) @ Ths ITSM @ 50Hz @ 60Hz It
2
(R-PUK)
Units
A C A C A C A A KA2s KA2s V s C
ST3230C..R
2785 80 3360 55 5970 25 61200 64000 18730 17000 1000 to 1800
@ 50Hz @ 60Hz
VDRM /VRRM tq TJ typical max.
500 125
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1
ST3230C..R Series
Bulletin I25200 rev. B 04/00
ELECTRICAL SPECIFICATIONS Voltage Ratings
Type number Voltage Code
10 12 ST3230C..R 14 16 18
V DRM/V RRM, max. repetitive peak and off-state voltage V
1000 1200 1400 1600 1800
VRSM , maximum nonrepetitive peak voltage V
1100 1300 1500 1700 1900
I DRM /IRRM max.
@ TC = 125C
mA
250
On-state Conduction
Parameter
I T(AV) Max. average on-state current @ Case temperature IT(AV) Max. average on-state current @ Heatsink temperature I T(RMS) Max. RMS on-state current I TSM Max. peak, one-cycle non-repetitive surge current
ST3230C..R
2785 (1720) 80 3360 (1360) 55 (85) 5970 61200 64000 49000 51300
Units
A C A C A
Conditions
180 conduction, half sine wave double side (single side [anode side]) cooled
DC @ 25C heatsink temperature double side cooled t = 10ms No voltage reapplied 50% VRRM reapplied No voltage reapplied 50% VRRM reapplied Sinusoidal half wave, Initial TC = 125C t = 8.3ms t = 10ms t = 8.3ms t = 10ms t = 8.3ms t = 10ms t = 8.3ms TJ = TJ max. T J = TJ max. I = 2900A, TC = 25C
pk
A
I 2t
Maximum I2t for fusing
18730 17000 12000 10920 KA2s
V T(TO) Max. value of threshold voltage rt V TM IL Max. value of on-state slope resistance Max. on-state voltage Typical latching current
0.92 0.09 1.3 300
V m V mA
T J = 25C, VD = 5V
Switching
Parameter
di/dt Max. repetitive 50Hz (no repetitive) rate of rise of turned-on current t
d
ST3230C..R
150 (300)
Units Conditions
A/s From 67% VDRM to 1000A gate drive 10V, 5, t = 0.5s
r
to 1A, TJ = TJ max. Gate drive 30V, 15, V = 67% VDRM, TJ = 25C
d
Maximum delay time
4.5 s
Rise time 0.5s IT = 1000A, t = 1ms, TJ = TJ max, VRM = 50V,
p
t
q
Typical turn-off time
500
dIRR/dt = 2A/s, VDR = 67% VDRM, dvDR/dt = 8V/s linear
2
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ST3230C..R Series
Bulletin I25200 rev. 04/00
Blocking
Parameter
dv/dt IRRM IDRM Maximum linear rate of rise of off-state voltage Max. peak reverse and off-state leakage current
ST3230C..R
500 250
Units
V/s mA
Conditions
TJ = TJ max. to 67% rated VDRM TJ = 125C rated VDRM /V RRM applied
Triggering
Parameter
PGM PG(AV) IGM VGM -V GM IGT VGT Maximum peak gate power Maximum average gate power Max. peak positive gate current Max. peak positive gate voltage Max. peak negative gate voltage Maximum DC gate current required to trigger Maximum gate voltage required to trigger
ST3230C..R
150 10 30 30 0.25 400 4
Units
W A V V mA V
Conditions
t = 100s
p
Anode positive with respect to cathode Anode positive with respect to cathode Anode negative with respect to cathode TC = 25C, VDRM = 5V TC = 25C, VDRM = 5V Max. gate current/voltage not to trigger is the max. value which will not trigger any unit with rated VDRM anode-to-cathode applied
VGD
DC gate voltage not to trigger
0.25
V
TC = 125C
Thermal and Mechanical Specification
Parameter
TJ max. Max. operating temperature T
stg
ST3230C..R
125 -55 to 125 0.019 0.0095 0.004 0.002 43000 (4400) 1600 (R-PUK)
Units
C
Conditions
On-state (conducting)
Max. storage temperature range Thermal resistance, junction to case
RthJ-C Rth(C-h) F wt
DC operation single side cooled K/W K/W N (Kg) g See Outline Table DC operation double side cooled Single side cooled Double side cooled Clamping force 43KN with mounting compound
Thermal resistance, case to heatsink Mounting force 10% Approximate weight Case style
RthJ-C Conduction
(The following table shows the increment of thermal resistence RthJ-C when devices operate at different conduction angles than DC)
Conduction angle
180 120 60
Single side
0.0010 0.0017 0.0044
Double side
0.0010 0.0017 0.0044
Units
K/W
Conditions
TJ = TJ max.
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3
ST3230C..R Series
Bulletin I25200 rev. B 04/00
Ordering Information Table
Device Code
ST 323
1 1 2 3 4 5 6 7 Thyristor Essential part number 0 = Converter grade C = Ceramic Puk 2
0
3
C
4
18
5
R
6
1
7 8
Voltage code: Code x 100 = VRRM (See Voltage Rating Table) R = Puk Case 0 = Eyelet terminals (Gate and Auxiliary Cathode Unsoldered Leads) 1 = Fast-on terminals (Gate and Auxiliary Cathode Unsoldered Leads) 2 = Eyelet terminals (Gate and Auxiliary Cathode Soldered Leads) 3 = Fast-on terminals (Gate and Auxiliary Cathode Soldered Leads)
8
-
Critical dv/dt: None = 500V/sec (Standard selection) L = 1000V/sec (Special selection)
Outline Table
112.5 (4.4) DIA. MAX. 73.2 (2.9) DIA. MAX. TWO PLACES 3 7.7 (1.5 ) M A X . GATE 1.5 (0.06) DIA.
ANODE
HOLE 1.5 (0.06) DIA. MAX. 4.76 (0.2)
CATHODE
20 5
2 (0 . 4)
6 .3
(R-PUK) All dimensions in millimeters (inches) Quote between upper and lower pole pieces has to be considered after application of Mounting Force (see Thermal and Mechanical Specification)
3.7 (0.15) DIA. NOM. X 2.1 (0.1) DEEP MIN. BOTH ENDS
4
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ST3230C..R Series
Bulletin I25200 rev. B 04/00
M a x im u m A llo w a b le H e a t sin k Te m pe ra t u re ( C ) 13 0 12 0 11 0 10 0 90 80 70 60 50 40 30 20 0 50 0 1 0 00 1 50 0 2 0 00 2 50 0 30 0 0 3 5 00 A v e ra g e O n -st a te C u rre n t (A )
Fig. 1 - Current Ratings Characteristics
Co nd uctio n A ng le
M axim um Allowable Heatsink Temperature (C)
ST 3 2 3 0 C ..R Se rie s (Sin g le Sid e C o o le d ) R th J-hs (D C ) = 0 .0 2 3 K / W
130 120 110 100 90 80 70 60 50 40 30 20 0 1000
ST3230C..R Series (D ouble Side Cooled) R th J-hs (DC) = 0.0115 K/W
C o ndu c tio n A ng le
60 1 20 1 80 DC
60
120 180
DC 5000 6000
2000
3000
4000
Average O n-state Curren t (A)
Fig. 2 - Current Ratings Characteristics
Maxim um Average On-state Power L oss (W )
9000 DC 180 120 60 RMS Lim it In s ta n ta n e o u s O n -st a te C u rre n t (A ) 8000 7000 6000 5000 4000 3000 2000 1000 0 0 1000 2000 3000 4000 5000 6000 Average O n-state Curren t (A)
Fig. 3 - On-state Power Loss Characteristics
Co n duc tion Ang le
1 0 0 00
TJ = 1 2 5 C 1 0 00
ST3230C..R Series TJ = 125C
S T3 2 3 0 C ..R Se rie s 10 0 0 .5
1
1. 5
2
In sta n t a n e o u s O n - st a te V o lt a g e (V )
Fig. 4 - On-state Voltage Drop Characteristics
P e a k H a lf Sin e W a v e O n -sta t e C u rre n t (A )
A t A n y R a t e d Lo a d C o n d it io n A n d W it h 5 0 % R a t e d V RR M A p p lie d Fo llo w in g S u rg e 5 0 00 0 In it ia l T J = 1 2 5 C @ 6 0 H z 0 .0 0 8 3 s 4 5 00 0 @ 5 0 H z 0 .0 1 0 0 s 4 0 00 0 3 5 00 0 3 0 00 0 2 5 00 0 2 0 00 0 1 5 00 0 1 10 1 00
N um b e r O f E qu al Am p litude H alf C yc le C urre n t Pulse s (N )
P e a k H a lf S in e W av e O n - sta t e C u rre n t (A )
5 5 00 0
100000
M a xim u m N o n R e pe t it iv e Su rg e C u rre n t V e rsu s P u lse T ra in D u ra t io n . C o n t ro l 90000 O f C o n d u c tio n M a y N o t Be M a in ta in e d . In itia l T J = 1 2 5 C 5 0 % R a t e d VR RM R e a p p lie d 80000 70000 60000 50000 40000 1 Pu lse Tr a in D u ra t io n (m s)
Fig. 6 - Maximum Non-Repetitive Surge Current
ST 3 2 3 0 C ..R Se rie s
S T 3 2 3 0 C ..R Se rie s 10
Fig. 5 - Maximum Non-Repetitive Surge Current
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ST3230C..R Series
Bulletin I25200 rev. B 04/00
1 00 00 S T 3 2 3 0 C ..R Se rie s T o t a l st o r e d c h ar ge - Q rr ( C ) T J = 125 C I T = 1000A
1 0 00
IT
dI T dt t Q rr I RM ( REC )
t p = 3 ms
1 00 0 .1
1
10
1 00
Ra t e O f D e c a y O f O n - sta t e C u rre n t - d i/ d t ( A / s)
Fig. 7 - Stored Charged
Tra n sie n t T h e rm al Im p e da n c e Z thJ- C ( K /W ) 0 .1 St e ad y St a t e V a lu e R thJ-C = 0 .0 1 9 K / W (Sin gle Sid e C o o le d ) 0. 01 R thJ-C = 0 .0 0 9 5 K/ W ( D o u b le S id e C o o le d ) ( D C O p e rat io n )
0 .0 0 1 ST 3 2 3 0 C ..R S e rie s 0. 00 01 0 .0 0 1
0 .0 1
0 .1
1
10
10 0
Sq u are W a v e P ulse D u ra t io n ( s)
Fig. 8 - Thermal Impedance ZthJ-C Characteristics
100 In st an t a n e o us G at e V o lt ag e ( V ) (1) (2) (3) (4) (5) (6) PG M PG M PG M PG M PG M PG M = 2W = 4W = 8W = 20W = 50W = 100W
Tj=-4 0 C Tj=25 C
(5)
(6)
10
Tj=1 25 C
1
(1)
(2)
(3)
(4)
VG D IG D
D e v ic e : S T3 2 3 0 C ..R Se rie s 0. 1 0 .0 0 1 0 .0 1
F re q u e n c y L im ite d b y P G( A V ) 0 .1 In sta n ta n e o u s G a te C u rre n t ( A ) 1 10
Fig. 9 - Gate Characteristics
6
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