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Bulletin I25155 rev. C 04/00
ST330C..C SERIES
PHASE CONTROL THYRISTORS Hockey Puk Version
Features
Center amplifying gate Metal case with ceramic insulator International standard case TO-200AB (E-PUK)
720A
Typical Applications
DC motor controls Controlled DC power supplies AC controllers
Major Ratings and Characteristics
Parameters
IT(AV) @ Ths IT(RMS) @ Ths ITSM @ 50Hz @ 60Hz I 2t @ 50Hz @ 60Hz V DRM/V RRM tq TJ typical
case style TO-200AB (E-PUK)
Units
A C A C A A KA2s KA2s V s C
ST330C..C
720 55 1420 25 9000 9420 405 370 400 to 1600 100 - 40 to 125
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ST330C..C Series
Bulletin I25155 rev. C 04/00
ELECTRICAL SPECIFICATIONS Voltage Ratings
Voltage Type number Code
04 08 ST330C..C 12 14 16
V DRM/V RRM, max. repetitive peak and off-state voltage V
400 800 1200 1400 1600
VRSM , maximum nonrepetitive peak voltage V
500 900 1300 1500 1700
I DRM/I RRM max.
@ TJ = TJ max
mA
50
On-state Conduction
Parameter
IT(AV) Max. average on-state current @ Heatsink temperature IT(RMS) Max. RMS on-state current ITSM Max. peak, one-cycle non-repetitive surge current
ST330C..C
720 (350) 55 (75) 1420 9000 9420 7570 7920
Units Conditions
A C 180 conduction, half sine wave double side (single side) cooled DC @ 25C heatsink temperature double side cooled t = 10ms A t = 8.3ms t = 10ms t = 8.3ms t = 10ms KA2s t = 8.3ms t = 10ms t = 8.3ms KA2s No voltage reapplied 100% VRRM reapplied No voltage reapplied 100% VRRM reapplied Sinusoidal half wave, Initial TJ = TJ max.
I2 t
Maximum I2t for fusing
405 370 287 262
I2 t
Maximum I2t for fusing
4050 0.91
t = 0.1 to 10ms, no voltage reapplied (16.7% x x IT(AV) < I < x IT(AV)), T J = TJ max.
V T(TO)1 Low level value of threshold voltage V T(TO)2 High level value of threshold voltage r t1 r t2 VTM IH IL Low level value of on-state slope resistance High level value of on-state slope resistance Max. on-state voltage Maximum holding current Typical latching current
V 0.92 (I > x IT(AV)),TJ = TJ max. (16.7% x x IT(AV) < I < x IT(AV)), T J = TJ max. m 0.57 1.96 600 mA 1000 T J = 25C, anode supply 12V resistive load V (I > x IT(AV)),TJ = TJ max. I = 1810A, TJ = TJ max, t = 10ms sine pulse
pk p
0.58
Switching
Parameter
di/dt Max. non-repetitive rate of rise of turned-on current t
d
ST330C..C
1000 1.0
Units Conditions
A/s Gate drive 20V, 20, t 1s TJ = T J max, anode voltage 80% VDRM Gate current 1A, di /dt = 1A/s
g r
Typical delay time Typical turn-off time
s tq 100
V = 0.67% VDRM, TJ = 25C
d
ITM = 550A, TJ = T J max, di/dt = 40A/s, VR = 50V dv/dt = 20V/s, Gate 0V 100, tp = 500s
2
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ST330C..C Series
Bulletin I25155 rev. C 04/00
Blocking
Parameter
dv/dt IRRM IDRM Maximum critical rate of rise of off-state voltage Max. peak reverse and off-state leakage current
ST330C..C
500 50
Units Conditions
V/s mA T J = TJ max. linear to 80% rated V DRM TJ = TJ max, rated VDRM /V RRM applied
Triggering
Parameter
PGM Maximum peak gate power
ST330C..C
10.0 2.0 3.0 20
Units Conditions
W A T J = TJ max, tp 5ms T J = TJ max, f = 50Hz, d% = 50 T J = TJ max, tp 5ms
PG(AV) Maximum average gate power IGM +VGM -VGM Max. peak positive gate current Maximum peak positive gate voltage Maximum peak negative gate voltage TYP. 200 IGT DC gate current required to trigger 100 50 2.5 VGT DC gate voltage required to trigger IGD VGD DC gate current not to trigger DC gate voltage not to trigger 1.8 1.1
V 5.0 MAX. 200 3.0 10 0.25 mA V V mA
TJ = TJ max, t 5ms
p
T J = - 40C T J = 25C T J = 125C T J = - 40C T J = 25C T J = 125C Max. gate current/voltage not to trigger is the max. value which will not trigger any unit with rated VDRM anode-to-cathode applied Max. required gate trigger/ current/ voltage are the lowest value which will trigger all units 12V anode-to-cathode applied
TJ = TJ max
Thermal and Mechanical Specification
Parameter
TJ T
stg
ST330C..C
-40 to 125 -40 to 150 0.09 0.04 0.02 0.01 9800 (1000)
Units
C
Conditions
Max. operating temperature range Max. storage temperature range
RthJ-hs Max. thermal resistance, junction to heatsink RthC-hs Max. thermal resistance, case to heatsink F Mounting force, 10%
DC operation single side cooled K/W DC operation double side cooled DC operation single side cooled DC operation double side cooled N (Kg) g See Outline Table
K/W
wt
Approximate weight Case style
83
TO - 200AB (E-PUK)
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ST330C..C Series
Bulletin I25155 rev. C 04/00
RthJ-hs Conduction
(The following table shows the increment of thermal resistence RthJ-hs when devices operate at different conduction angles than DC)
Sinusoidal conduction Conduction angle
Single Side Double Side 180 120 90 60 30 0.012 0.014 0.017 0.025 0.043 0.011 0.012 0.015 0.022 0.036
Rectangular conduction Units
Single Side Double Side 0.008 0.014 0.019 0.026 0.043 0.007 0.013 0.017 0.023 0.037 K/W TJ = TJ max.
Conditions
Ordering Information Table
Device Code
ST
1
33
2
0
3
C
4
16
5
C
6
1
7 8
1 2 3 4 5 6 7
-
Thyristor Essential part number 0 = Converter grade C = Ceramic Puk Voltage code: Code x 100 = VRRM (See Voltage Rating Table) C = Puk Case TO-200AB (E-PUK) 0 = Eyelet terminals (Gate and Auxiliary Cathode Unsoldered Leads) 1 = Fast-on terminals (Gate and Auxiliary Cathode Unsoldered Leads) 2 = Eyelet terminals (Gate and Auxiliary Cathode Soldered Leads) 3 = Fast-on terminals (Gate and Auxiliary Cathode Soldered Leads)
8
-
Critical dv/dt: None = 500V/sec (Standard selection) L = 1000V/sec (Special selection)
4
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ST330C..C Series
Bulletin I25155 rev. C 04/00
Outline Table
ANODE TO GATE CREEPAGE DISTANCE: 11.18 (0.44) MIN. STRIKE DISTANCE: 7.62 (0.30) MIN. 25.3 (0.99) DIA. MAX. 0.3 (0.01) MIN.
14.1 / 15.1 (0.56 / 0.59) 0.3 (0.01) MIN. 25.3 (0.99) DIA. MAX. 40.5 (1.59) DIA. MAX. GATE TERM. FOR 1.47 (0.06) DIA. PIN RECEPTACLE
2 HOLES 3.56 (0.14) x 1.83 (0.07) MIN. DEEP 6.5 (0.26) 4.75 (0.19)
Case Style TO-200AB (E-PUK)
25 5
All dimensions in millimeters (inches) Quote between upper and lower pole pieces has to be considered after application of Mounting Force (see Thermal and Mechanical Specification)
42 (1.65) MAX. 28 (1.10)
M a xim u m A llo w a b le He a t sin k T e m p e ra t u re (C )
130 120 110 100 90 80 70 0 50 30
M a xim u m A llo w a ble H e a t sin k T e m p e rat u re ( C )
S T 3 3 0 C ..C S e rie s ( Sin g le S id e C o o le d ) R thJ-hs (D C ) = 0 .0 9 K / W
130 120 110 100 90 80 70 60 50 40 30 20 0
ST 3 3 0 C ..C Se rie s (Sin gle S id e C o o le d ) R thJ-hs (D C ) = 0 .0 9 K / W
C o ndu ction A ng le
Co nd uc tio n P eriod
60
90 120 18 0
6 0 30 90 120 180 DC
1 0 0 15 0 20 0 25 0 3 0 0 3 5 0 4 00
10 0 2 00 3 0 0 4 0 0 50 0 60 0 7 00 80 0 9 00 A v e ra g e O n -st a t e C urre n t (A )
Fig. 2 - Current Ratings Characteristics
A v e ra g e O n -st a t e C u rre n t (A )
Fig. 1 - Current Ratings Characteristics
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ST330C..C Series
Bulletin I25155 rev. C 04/00
M a x im u m A llo w a b le H e a t sin k T e m p e r a tu re ( C ) 1 30 1 20 1 10 1 00 90 80 70 60 50 40 30 20 0 200 40 0 600 800 1 0 00 A v e ra g e O n -st a t e C u rre n t (A )
Fig. 3 - Current Ratings Characteristics
Co n duc tio n A ng le
M a xim u m A llo w a b le H e a t sin k T e m p e r a tu re ( C )
ST 3 3 0 C ..C S e rie s (D o u b le Sid e C o o le d ) R th J-hs (D C ) = 0 .0 4 K /W
130 120 110 100 90 80 70 60 50 40 30 20 10 0 30 60
S T3 3 0 C ..C Se rie s (D o ub le S id e C o o le d ) R thJ-h s (D C ) = 0 .0 4 K / W
C o ndu ctio n Pe rio d
90 120 180 DC 20 0 4 0 0 60 0 80 0 1 00 0 1 20 0 1 40 0 1 60 0 A v e ra g e O n -st a t e C u rr e n t (A )
Fig. 4 - Current Ratings Characteristics
30
60
90
120
18 0
Maxim um Average O n-state Pow er Loss (W )
1400 1200 1000 800 600
C o ndu ctio n A ng le
Maxim um Average On -state Power Loss (W )
1800 1600 1400 1200
180 120 90 60 30
RMS Lim it
DC 180 120 90 60 30
1000 RMS Limit 800 600 400 200 0 0 200 400 600 800 1000 1200 Average O n-state Curren t (A)
Fig. 6- On-state Power Loss Characteristics
C o nd uc tio n Pe rio d
400 200 0 0 100 200 300 400 500 600 700 800 Average O n-state Current (A)
Fig. 5- On-state Power Loss Characteristics
ST330C..C Series T J = 125C
ST330C..C Series T J = 125C
Peak Half Sine Wa ve On-state Cu rrent (A)
7500 7000 6500 6000 5500 5000 4500 4000 3500 1
At An y Rated L oad Con dition And W ith Rated VRR M Applied Following Surge. In itial T J = 125C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s
P e ak H a lf Sin e W a v e O n -st a t e C u rre n t (A )
8000
9000 8500
M a x im u m N o n R e p e t it iv e Su rg e C u rre n t V e rsu s Pu lse T ra in D u ra tio n . C o n tro l 8000 O f C o n d u c t io n M a y N o t Be M a in t a in e d . In it ia l T J = 1 2 5 C 7500 N o V o lt a g e R e a pp lie d 7000 R a t e d V RRM Re a p p lie d 6500 6000 5500 5000 4500 4000 ST 3 3 0 C ..C S e rie s
ST330C..C Series 10 100
3500 0.01
0.1 P u lse T ra in D u ra t io n (s)
1
N um b e r O f E qua l A m plitud e H alf C y c le C urre nt Pulse s (N )
Fig. 7 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled
Fig. 8 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled
6
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ST330C..C Series
Bulletin I25155 rev. C 04/00
10000 Instan taneous O n-state Curren t (A) T J = 25C TJ = 125C
1000
ST330C..C Series
100 0 1 2 3 4 5 6 7 In stantaneous O n-state V oltage (V)
Fig. 9 - On-state Voltage Drop Characteristics
0 .1
Tra n sie n t Th e rm a l Im pe da n c e Z thJ- hs ( K/ W )
S te ad y S ta t e V a lu e R thJ-hs = 0 .0 9 K / W ( Sin g le S id e C o o le d ) R thJ-hs = 0 .0 4 K / W ( D o ub le S id e C o o le d ) ( D C O pe ra t io n )
0 .0 1
ST 3 3 0 C ..C S e rie s
0 .0 0 1 0 .0 0 1
0 .0 1
0. 1 Sq u a re W a v e P u lse D u ra t io n ( s)
1
10
Fig. 10 - Thermal Impedance ZthJ-hs Characteristics
10 0 In st a n t a n e o u s G at e V o lt a ge ( V )
R e c t a n g u la r g a te p u lse a ) R e c o m m e n d e d lo a d lin e fo r ra te d d i/ d t : 2 0 V , 1 0 o h m s; tr < =1 s b ) R e c o m m e n d e d lo a d lin e fo r < =3 0 % ra te d d i/ dt : 1 0 V , 1 0 o h m s 10 t r<= 1 s (b )
Tj=-40 C
(1) (2) (3) (4) (a )
PGM PGM PGM PGM
= = = =
10W , 20W , 40W , 60W ,
tp tp tp tp
= = = =
4m s 2m s 1m s 0 .6 6 m s
Tj=25 C
Tj=125 C
1 V GD IG D 0 .1 0 .0 0 1 0. 01
(1)
(2)
(3) (4)
D e v ic e : ST 3 3 0 C ..C Se rie s 0 .1 1
F re q u e nc y L im it e d b y P G ( A V ) 10 1 00
In sta n t a n e o u s G a t e C u rre n t ( A )
Fig. 11 - Gate Characteristics
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