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| AM1214-325 .REFRACTORY/ .EMI .5: .LOW .I .OVERLAY .METAL/ .P DESCRIPTION RF & MICROWAVE TRANSISTORS L-BAND RADAR APPLICATIONS G OLD METALLIZATION T TER SITE BALLASTED 1 VSWR CAPABILITY THERMAL RESISTANCE NPUT/OUTPUT MATCHING GEOMETRY C ERAMIC HERMETIC PACKAGE = 325 W MIN. WITH 6.4 dB GAIN OUT .400 x .500 2LFL (S038) hermetically sealed ORDER CODE AM1214-325 BRANDING 1214-325 PIN CONNECTION The AM1214-325 device is a high power transistor specifically designed for L-Band radar pulsed output and driver applications. This device is designed for operation under moderate pulse width and duty cycle pulse conditions and is capable of withstanding 5:1 VSWR at rated RF conditions. Low RF thermal resistance and computerized automatic wire bonding techniques ensure high reliability and product consistency. The AM1214-325 is supplied in the BIGPACTM Hermetic M etal/Ceramic package with i nternal Input/Output matching structures. ABSOLUTE MAXIMUM RATINGS (T case Symbol 1. Collector 2. Base 3. Emitter 4. Base = 25 C) Value Unit Parameter PDISS IC VCC TJ T STG Power Dissipation* Device Current* (TC 100C) 1250 25 45 250 - 65 to +200 W A V C C Collector-Supply Voltage* Junction Temperature (Pulsed RF Operation) Storage Temperature THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance* 0.10 C/W *Applies only to rated RF amplifier operation September 1992 1/4 AM1214-325 ELECTRICAL SPECIFICATIONS (Tcase STATIC Symbol Test Conditions Valu e Min. Typ. Max. Unit = 25 C) BVCBO BVEBO BVCES ICES hFE DYNAMIC Symbol IC = 50mA IE = 15mA IC = 50mA VCE = 50V VCE = 5V IE = 0mA IC = 0mA 65 3.0 65 -- -- -- -- -- -- -- -- -- 30 -- V V V mA -- IC = 5A 10 Test Conditions Value Min. Typ. Max. Unit POUT c GP Note: f = 1200 -- 1400MHz f = 1200 -- 1400MHz f = 1200 -- 1400MHz = = 13Sec 2% PIN = 75W PIN = 75W PIN = 75W VCC = 45V VCC = 45V VCC = 45V 325 38 6.4 360 45 6.8 -- -- -- W % dB Pul se Widt h Duty Cycle TYPICAL PERFORMANCE POWER OUTPUT & EFFICIENCY vs FREQUENCY 2/4 AM1214-325 IMPEDANCE DATA TYPICAL INPUT IMPEDANCE ZIN TYPICAL COLLECTOR LOAD IMPEDANCE ZCL FREQ. L = 1.2 GHz M = 1.3 GHz H = 1.4 GHz ZIN () 4.0 + j 3.5 3.0 + j 4.0 2.0 + j 3.5 ZCL () 3.0 - j 3.0 2.0 - j 2.5 1.0 - j 2.0 PIN = 75 W VCC = 45 V Normalized to 50 ohms TEST CIRCUIT 3/4 AM1214-325 PACKAGE MECHANICAL DATA Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use ascritical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. (c) 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 4/4 |
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