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2SC5755
TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC5755
High-Speed Switching Applications DC-DC Converter Applications Strobe Applications
* * * High DC current gain: hFE = 400 to 1000 (IC = 0.2 A) Low collector-emitter saturation voltage: VCE (sat) = 0.12 V (max) High-speed switching: tf = 25 ns (typ.) Unit: mm
Maximum Ratings (Ta = 25C)
Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range DC t = 10 s DC Pulse Symbol VCBO VCEO VEBO IC ICP IB PC (Note) Tj Tstg Rating 20 10 7 2 3.5 200 500 750 150 -55 to 150 Unit V V V A mA mW C C
JEDEC JEITA TOSHIBA
2-3S1C
Weight: 0.01 g (typ.)
Note: Mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu area: 2 645 mm )
Electrical Characteristics (Ta = 25C)
Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Rise time Switching time Storage time Fall time Symbol ICBO IEBO V (BR) CEO hFE (1) hFE (2) VCE (sat) VBE (sat) tr tstg tf Test Condition VCB = 20 V, IE = 0 VEB = 7 V, IC = 0 IC = 10 mA, IB = 0 VCE = 2 V, IC = 0.2 A VCE = 2 V, IC = 0.6 A IC = 0.6 A, IB = 12 mA IC = 0.6 A, IB = 12 mA See Figure 1 circuit diagram. VCC 6 V, RL = 10 W IB1 = -IB2 = 12 mA Min 3/4 3/4 10 400 200 3/4 3/4 3/4 3/4 3/4 Typ. 3/4 3/4 3/4 3/4 3/4 3/4 3/4 60 215 25 Max 100 100 3/4 1000 3/4 0.12 1.10 3/4 3/4 3/4 ns V V Unit nA nA V
1
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2SC5755
Marking
VCC 20 ms IB1 IB1 RL Output
Input IB2
WL
IB2 Duty cycle < 1%
Figure 1
Switching Time Test Circuit & Timing Chart
2
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2SC5755
IC - VCE
2.4 60 2 40 10000 30 20 10 3000
hFE - IC
(A)
hFE
8 1.6 6 4
IC
1000
Ta = 100C 25
Collector current
DC current gain
1.2
300 100
-55
0.8
IB = 2mA Common emitter Ta = 25 C Single nonrepetitive pulse 0.6 0.8 1.0 1.2
0.4 0 0.2 0.4
30
0 0
10 0.001
Common emitter VCE = 2 V Single nonrepetitive pulse 0.003 0.01 0.03 0.1 0.3 1 3
Collector current
Collector-emitter voltage VCE
(V)
IC
(A)
VCE (sat) - IC
1 Common emitter 10 IC/IB = 50 0.3 Single nonrepetitive pulse 0.1 25 Ta = 100C -55
VBE (sat) - IC
Collector-emitter saturation voltage VCE (sat) (V)
Base-emitter saturation voltage VBE (sat) (V)
3 -55 1 Ta = 100C
0.03 0.01
0.3 0.1
25
0.003
0.03
Common emitter IC/IB = 50 Single nonrepetitive pulse 0.003 0.01 0.03 0.1 0.3 1 3
0.001 0.001
0.003
0.01
0.03
0.1
0.3
1
3
0.01 0.001
Collector current
IC
(A)
Collector current
IC
(A)
IC - VBE
2 Common emitter VCE = 2 V Single nonrepetitive pulse
IC Collector current
(A)
1.6
1.2
0.8
Ta = 100C 25 -55
0.4
0 0
0.4
0.8
1.2
1.6
Base-emitter voltage VBE
(V)
3
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2SC5755
rth - tw
1000
Transient thermal resistance rth (j-a) (C/W)
300
100
30
10 Curves should be applied in thermal limited area. Single nonrepetitive pulse Ta = 25C Mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm2) 1 0.001 0.003 0.01 0.03 0.1 0.3 1 3 10 30 100 300 1000
3
Pulse width
tw
(s)
Safe Operating Area
10 IC max (pulsed)* 100 ms* 1 ms*
(A)
3
IC max (continuous)
Collector current IC
1 DC operation (Ta = 25C) 10 ms*
0.3
*: Single nonrepetitive pulse Ta = 25C 0.1 Note that the curves for 100 ms, 10 s and DC operation will be different when the devices aren't mounted on an FR4 0.03 board (glass epoxy, 1.62mm thick, Cu area: 645 mm ). These characteristic curves must be derated linearly with increase in temperature. 0.01 0.03 0.3 3 0.1 1
100 ms*
10 s* VCEO max 10 30
100
Collector-emitter voltage VCE
(V)
4
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2SC5755
RESTRICTIONS ON PRODUCT USE
000707EAA
* TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others.
* The information contained herein is subject to change without notice.
5
2002-07-22

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