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Transistor
2SD0965 (2SD965)
Silicon NPN epitaxial planer type
For low-frequency power amplification For stroboscope
Unit: mm
5.00.2
5.10.2
4.00.2
s Features
q q
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
(Ta=25C)
Ratings 40 20 7 8 5 0.75 150 -55 ~ +150 Unit V
12.90.5
Low collector to emitter saturation voltage VCE(sat). Satisfactory operation performances at high efficiency with the low-voltage power supply.
0.70.1
0.70.2
0.45+0.15 0.1 2.5+0.6 0.2 1 23 2.5+0.6 0.2
0.45+0.15 0.1
V A A W C C
2.30.2
V
1:Emitter 2:Collector 3:Base EIAJ:SC-43A TO-92-A1 Package
s Electrical Characteristics
Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance
(Ta=25C)
Symbol ICBO ICEO IEBO VCEO VEBO hFE1*1 hFE2 VCE(sat) fT Cob Conditions VCB = 10V, IE = 0 VCE = 10V, IB = 0 VEB = 7V, IC = 0 IC = 1mA, IB = 0 IE = 10A, IC = 0 VCE = 2V, IC = 0.5A*2 VCE = 2V, IC = 2A*2 IC = 3A, IB = 0.1A*2 VCB = 6V, IE = -50mA, f = 200MHz VCB = 20V, IE = 0, f = 1MHz
*2
min
typ
max 0.1 1.0 0.1
Unit A A A V V
20 7 230 150 1 150 50 600
V MHz pF
Pulse measurement
*1h
FE1
Rank classification
Q 230 ~ 380 R 340 ~ 600
Rank hFE1
Note.) The Part number in the Parenthesis shows conventional part number.
568
Transistor
PC -- Ta
1.0 2.4 Ta=25C IB=7mA 6mA 1.6 5mA 1.2 4mA 3mA 0.8 2mA 0.4
2SD0965
IC -- VCE
6 VCE=2V 5 25C
IC -- VBE
Collector power dissipation PC (W)
Collector current IC (A)
Collector current IC (A)
0.8
2.0
Ta=75C 4
-25C
0.6
3
0.4
2
0.2
1mA
1
0 0 20 40 60 80 100 120 140 160
0 0 0.4 0.8 1.2 1.6 2.0 2.4
0 0 0.4 0.8 1.2 1.6 2.0
Ambient temperature Ta (C)
Collector to emitter voltage VCE (V)
Base to emitter voltage VBE (V)
VCE(sat) -- IC
Collector to emitter saturation voltage VCE(sat) (V)
10 3 1 0.3 0.1 0.03 0.01 0.003 0.001 0.01 0.03
VBE(sat) -- IC
Base to emitter saturation voltage VBE(sat) (V)
IC/IB=30 100 30 10 3 1 0.3 0.1 0.03 0.01 0.01 0.03 Ta=-25C 75C IC/IB=30 600
hFE -- IC
VCE=2V Ta=25C 500 Ta=75C 400 25C 300 -25C 200
Ta=75C 25C -25C
25C
Forward current transfer ratio hFE
3 10
100
0.1
0.3
1
3
10
0.1
0.3
1
0 0.01 0.03
0.1
0.3
1
3
10
Collector current IC (A)
Collector current IC (A)
Collector current IC (A)
fT -- IE
400 350 300 250 200 150 100 50 0 - 0.01 - 0.03 - 0.1 - 0.3 100
Cob -- VCB
Collector output capacitance Cob (pF)
VCB=6V Ta=25C IE=0 f=1MHz Ta=25C
Area of safe operation (ASO)
100 30 Single pulse Ta=25C
Transition frequency fT (MHz)
Collector current IC (A)
80
10 ICP IC 3 t=1s 1 0.3 0.1 0.03 t=10ms
60
40
20
0 -1 -3 -10 1 3 10 30 100
0.01 0.1
0.3
1
3
10
30
100
Emitter current IE (A)
Collector to base voltage VCB (V)
Collector to emitter voltage VCE (V)
569
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2001 MAR

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