 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| 2SJ319 L , 2SJ319 S Silicon P Channel MOS FET Application DPAK-1 High speed power switching 4 4 Features 12 * * * * * Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for Switching regulator, DC - DC converter 3 2, 4 12 1 3 1. Gate 2. Drain 3. Source 4. Drain 3 Table 1 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID ID(pulse)* IDR Pch** Tch Tstg Ratings -200 20 -3 -12 -3 20 150 -55 to +150 Unit V V A A A W C C -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- * PW 10 s, duty cycle 1 % ** Value at Tc = 25 C 2SJ319 L , 2SJ319 S Table 2 Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr Min -200 Typ -- Max -- Unit V Test conditions ID = -10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 16 V, VDS = 0 VDS = -160 V, VGS = 0 ID = -1 mA, VDS = -10 V -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- 20 -- -- V -------------------------------------------------------------------------------------- -- -- -2.0 -- -- -- -- 1.7 10 -100 -4.0 2.3 A A V -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- ID = -2 A VGS = -10 V * ID = -2 A VDS = -10 V * VDS = -10 V VGS = 0 f = 1 MHz ID = -2 A VGS = -10 V RL = 10 -------------------------------------------------------------------------------------- 1.0 1.7 -- S -------------------------------------------------------------------------------------- Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time * Pulse Test -- -- -- -- -- -- -- -- 330 130 25 10 30 40 30 -1.15 -- -- -- -- -- -- -- -- pF pF pF ns ns ns ns V IF = -3 A, VGS = 0 IF = -3 A, VGS = 0, diF / dt = 50 A / s ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -- 180 -- s -------------------------------------------------------------------------------------- 2SJ319 L , 2SJ319 S Power vs. Temperature Derating 20 Pch (W) I D (A) -50 -30 -10 -3 -1 -0.3 -0.1 -0.05 0 50 100 150 Ta (C) 200 -1 Maximum Safe Operation Area 15 Channel Dissipation 10 5 1 10 0 s 0 s PW 1 m DC = s 10 O pe m s ra (1 tio sh n (T ot Operation in c ) this area is limited by R DS(on) = 25 C ) Drain Current Ta = 25 C -3 -10 -30 -100 -300 -500 Ambient Temperature Drain to Source Voltage V DS (V) Typical Output Characteristics -5 -10 V I D (A) -4 Pulse Test -8 V -6 V (A) -4 -5 Typical Transfer Characteristics 25 C Tc = -25 C -3 ID 75 C -3 Drain Current -5 V Drain Current -2 -4 V VGS = -3.5 V 0 -4 -8 -12 Drain to Source Voltage -16 -20 V DS (V) -2 -1 -1 V DS = -10 V Pulse Test -2 -4 -6 Gate to Source Voltage -8 -10 V GS (V) 0 2SJ319 L , 2SJ319 S Drain to Source Saturation Voltage vs. Gate to Source Voltage Pulse Test Drain to Source On State Resistance R DS(on) ( ) -20 Drain to Source Saturation Voltage V DS(on) (V) Static Drain to Source on State Resistance vs. Drain Current 10 5 VGS = -10 V Pulse Test -16 2 1 0.5 0.2 0.1 -0.2 -12 I D = -5 A -8 -2 A -1 A 0 -4 -8 12 Gate to Source Voltage -16 -20 V GS (V) -4 -0.5 -1 -2 -5 Drain Current I D (A) -10 Static Drain to Source on State Resistance R DS(on) ( ) Forward Transfer Admittance |y fs | (S) Static Drain to Source on State Resistance vs. Temperature 5 Forward Transfer Admittance vs. Drain Current 3 2 Tc = -25 C 1 25 C 75 C 4 -2 A I D = -5 A -1 A 3 0.5 2 1 0 -40 VGS = -10 V Pulse Test 0 40 80 120 160 Case Temperature Tc (C) 0.2 0.1 V DS = -10 V Pulse Test -0.5 -1 -2 -5 -10 -0.05 -0.1 -0.2 Drain Current I D (A) 2SJ319 L , 2SJ319 S Body-Drain Diode Reverse Recovery Time 500 Reverse Recovery Time trr (ns) Capacitance C (pF) Typical Capacitance vs. Drain to Source Voltage 1000 500 Ciss 200 100 50 20 10 5 0 -10 -20 Crss VGS = 0 f = 1 MHz Coss 200 100 50 20 10 5 -0.05 -0.1 -0.2 -0.5 -1 -2 -5 di/dt = 50 A/s, VGS = 0 duty < 1 %, Ta = 25 C -30 -40 -50 Reverse Drain Current I DR (A) Drain to Source Voltage V DS (V) Dynamic Input Characteristics V DS (V) V DD = -50 V -100 V -150 V V DS V DD = -50 V -100 V -150 V V GS (V) 0 0 Switching Characteristics 500 200 100 50 20 10 5 -0.05 -0.1 -0.2 -0.5 -1 -2 -5 -10 Drain to Source Voltage -200 -8 Gate to Source Voltage Switching Time t (ns) -100 -4 V GS = -10 V, V DD = -30 V duty < 1 %, PW = 2 s t d(off) tf tr t d(on) -300 -12 -400 V GS ID = -3A 4 8 12 16 Gate Charge Qg (nc) -16 -20 -500 0 20 Drain Current I D (A) 2SJ319 L , 2SJ319 S Reverse Drain Current vs. Source to Drain Voltage -5 Reverse Drain Current I DR (A) Pulse Test -4 -3 -2 -10 V V GS = 0, 5 V -1 0 -0.4 -0.8 -1.2 -1.6 V DS (V) -2 Drain to Source Voltage Normalized Transient Thermal Impedance vs. Pulse Width 3 Normalized Transient Thermal Impedance s (t) Tc = 25C 1 D=1 0.5 0.2 0.1 0.05 0.02 0.0 1 0.3 0.1 ch - c(t) = s (t) * ch - c ch - c = 6.25 C/W, Tc = 25 C uls e PDM PW T 0.03 1s h P ot D= PW T 0.01 10 100 1m 10 m Pulse Width 100 m PW (S) 1 10 2SJ319 L , 2SJ319 S Switching Time Test Circuit Vin Monitor D.U.T. RL Vout Monitor Vin 10% Waveforms 90% Vin 10 V 50 V DD = 30 V Vout td(on) 90% 10% tr td(off) 90% 10% tf |
Price & Availability of 2SJ319
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |