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| 2SJ363 Silicon P Channel MOS FET Application UPAK Low frequency power switching 1 32 Features * Low on-resistance * Low drive current * 4 V gate drive device can be driven from 5 V source 4 D G 1. Gate 2. Drain 3. Source 4. Drain S Table 1 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID ID(pulse)* IDR Pch** Tch Tstg Ratings -30 20 -2 -4 -2 1 150 -55 to +150 Unit V V A A A W C C -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- * PW 100 s, duty cycle 10 % ** Value on the alumina ceramic board (12.5 x 20 x 0.7mm) *** Marking is "PY". 2SJ363 Table 2 Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) Min -30 Typ -- Max -- Unit V Test conditions ID = -10 mA, VGS = 0 IG = 10 A, VDS = 0 -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- 20 -- -- V -------------------------------------------------------------------------------------- -- -- -1.0 -- -- -- -- 0.6 5 -1 -2.0 0.75 A A V VGS = 16 V, VDS = 0 VDS = -24 V, VGS = 0 ID=-100 A, VDS = -10 V -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- ID = -1 A VGS = -4 V * ID = -1 A VGS = -10 V * ID = -1 A VDS = -10 V * VDS = -10 V VGS = 0 f = 1 MHz ID = -1 A VGS = -10 V RL = 30 ------------------------------------------------ -- 0.35 0.45 -------------------------------------------------------------------------------------- Forward transfer admittance |yfs| Ciss Coss Crss td(on) tr td(off) tf 1.4 2.0 -- S -------------------------------------------------------------------------------------- Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time -- -- -- -- -- -- -- 2.1 100 0.25 1.65 8 25.9 14.9 -- -- -- -- -- -- -- pF pF pF s s s s ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- 2SJ363 Maximum Channel Power Dissipation Curve Pch (W) 2.0 I D (A) -10 -3 -1 -0.3 -0.1 Maximum Safe Operation Area 100 s s m 1=s m PW 10 1.5 Channel Power Dissipation Drain Current DC O pe 1.0 ra tio n 0.5 -0.03 -0.01 0 50 100 150 Ta (C) 200 Operation in this area is limited by R DS(on) Ta = 25 C -0.3 -1 -3 -10 -30 -100 -0.1 Ambient Temperature Drain to Source Voltage V DS (V) -3 .5 V Typical Output Characteristics -4.5 V -4 V -2.0 (A) V Typical Transfer Characteristics -5 I D (A) -1.6 -3 Pulse Test -4 Ta = -25 C -3 25 C 75 C -2 V DS = -10 V -1.2 V -2.5 Drain Current -0.8 Drain Current ID -0.4 -2 V -1 V GS = -1.5 V 0 -2 -4 -6 Drain to Source Voltage -10 V DS (V) -8 0 -1 -2 -3 Gate to Source Voltage -4 -5 V GS (V) 2SJ363 Drain to Source Saturation Voltage vs. Gate to Source Voltage Drain to Source On State Resistance R DS(on) ( ) -1.0 Drain to Source Saturation Voltage V DS(on) (V) Static Drain to Source on State Resistance vs. Drain Current 10 Pulse Test 3 1 VGS = -4 V -10 V -0.8 -2 A -0.6 0.3 0.1 -0.4 -1 A -0.2 I D = -0.5 A 0.03 0.01 -0.01 -0.03 -0.1 -0.3 Drain Current 0 -4 -8 -12 Gate to Source Voltage -16 -20 V GS (V) -1 -3 I D (A) -10 Static Drain to Source on State Resistance R DS(on) ( ) Forward Transfer Admittance |y fs | (S) Static Drain to Source on State Resistance vs. Temperature 2.0 Pulse Test 1.6 Forward Transfer Admittance vs. Drain Current 10 5 Tc = -25 C 2 1 0.5 V DS = -10 V Pulse Test -0.5 -1 -2 -5 Drain Current I D (A) -10 25 C 75 C 1.2 I D = -2 A 0.8 VGS = -4 V -1 A -0.5 A 0.4 0 -40 VGS = -10 V I D = -2 A 0.2 0.1 -0.1 -0.2 -1 A -0.5 A 0 40 80 120 160 Case Temperature Tc (C) 2SJ363 500 200 100 50 20 10 5 Typical Capacitance vs. Drain to Source Voltage VGS = 0 f = 1 MHz 100 50 Switching Time t (s) Switching Characteristics Capacitance C (pF) Coss t d(off) tf tr 20 10 5 Ciss 2 1 0.5 0.2 0.1 0 -10 -20 -30 -40 -50 Drain to Source Voltage V DS (V) V GS = -10 V PW = 50 s, duty < 1 % t d(on) -0.5 -1 -2 -5 Crss 2 1 -0.05 -0.1 -0.2 Drain Current I D (A) Reverse Drain Current vs. Source to Drain Voltage -5 Pulse Test Reverse Drain Current I DR (A) -4 -3 -10 V -5 V -2 -1 V GS = 0 0 -0.4 -0.8 -1.2 -1.6 -2.0 Source to Drain Voltage V SD (V) |
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