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| 2SJ399 Silicon P Channel MOS FET Application MPAK Low frequency power switching 3 Features Low on-resistance Small package Low drive current 4 V gate drive device can be driven from 5 V source * Suitable for low signal load switch. * * * * D G 1 2 1. Source 2. Gate 3. Drain S Table 1 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID ID(pulse)* IDR Pch** Tch Tstg Ratings -30 20 -0.2 -0.4 -0.2 150 150 -55 to +150 Unit V V A A A mW C C -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- * PW 100 s, duty cycle 10 % ** Marking is "ZF-" 2SJ399 Table 2 Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) Min -30 Typ -- Max -- Unit V Test conditions ID = -100 A, VGS = 0 -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- 20 -- -- V IG = 100 A, VDS = 0 VGS = 16 V, VDS = 0 VDS = -30 V, VGS = 0 ID = -10 A, VDS = -5 V -------------------------------------------------------------------------------------- -- -- -1.0 -- -- -- -- 2.7 2 -1 -2.0 7.5 A A V -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- ID = -20 mA VGS = -4 V * ID = -10 mA VGS = -10 V * VDS = -10 V VGS = 0 f = 1 MHz ID = -0.1 A VGS = -10 V RL = 100 PW = 5 s ------------------------------------------------ -- 2.0 7 -------------------------------------------------------------------------------------- Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Ciss Coss Crss td(on) tr td(off) tf -- -- -- -- -- -- -- 1.1 22.3 0.17 530 2170 7640 7690 -- -- -- -- -- -- -- pF pF pF ns ns ns ns ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- 2SJ399 Pch (mW) Maximum Channel Dissipation Curve 200 I D (A) -1 Maximum Safe Operation Area 1 ms -0.3 -0.1 = s PW0 m 1 150 Channel Power Dissipation Drain Current C D 100 n tio ra pe O -0.03 -0.01 50 Operation in this area is limited by R DS(on) -0.003 Ta = 25 C 0 50 100 150 Ta (C) 200 -0.001 -0.1 -0.3 -1 -3 -10 -30 -100 Ambient Temperature Drain to Source Voltage V DS (V) Typical Output Characteristics -2.0 Pulse Test I D (A) -5 V Typical Transfer Characteristics -0.5 V DS = -10 V -1.2 ID Drain Current (A) -1.6 -0.4 -4.5 V -0.3 Drain Current -4 V -0.8 -3.5 V -3 V -0.2 75 C 25 C Ta = -25 C -0.4 -0.1 -2.5 V VGS = -2 V 0 -2 -4 -6 Drain to Source Voltage -8 -10 V DS (V) 0 -1 -2 -3 Gate to Source Voltage -4 -5 V GS (V) 2SJ399 Drain to Source Saturation Voltage vs. Gate to Source Voltage Drain to Source On State Resistance R DS(on) ( ) -0.5 Drain to Source Saturation Voltage V DS(on) (V) Static Drain to Source on State Resistance vs. Drain Current 100 Ta = 25 C 50 Pulse Test 20 10 5 VGS = -4 V 2 1 -0.01 -0.02 -0.05 -0.1 -0.2 -0.5 -1 -0.4 -0.3 -0.2 A -0.2 -0.1 A -0.1 I D = -0.05 A -10 V 0 -4 -8 -12 Gate to Source Voltage -16 -20 V GS (V) Drain Current I D (A) Static Drain to Source on State Resistance R DS(on) ( ) Forward Transfer Admittance |y fs | (S) Static Drain to Source on State Resistance vs. Temperature 5 I D = -0.2 A -0.05 A -0.1 A V GS = -4 V I D = -0.2 A 2 VGS = -10 V -0.1 A -0.05 A Forward Transfer Admittance vs. Drain Current 1 0.5 Ta = -25 C 0.2 0.1 25 C 75 C 4 3 0.05 0.02 0.01 -0.01 -0.02 -0.05 -0.1 -0.2 -0.5 -1 1 0 -40 V DS = -10 V Pulse Test 0 40 80 120 160 Case Temperature Tc (C) Drain Current I D (A) 2SJ399 Typical Capacitance vs. Drain to Source Voltage 100 50 20 10 5 2 1 0.5 0.2 0.1 0 -10 Crss -20 -30 VGS = 0 f = 1 MHz -40 -50 Ciss Coss Switching Characteristics 10000 5000 tf t d(off) tr t d(on) Switching Time t (ns) Capacitance C (pF) 2000 1000 500 200 100 VGS = -10 V PW = 5 s -0.2 -0.5 -1 -2 Drain Current I D (A) -5 -0.1 Drain to Source Voltage V DS (V) Reverse Drain Current vs. Source to Drain Voltage -0.5 Reverse Drain Current I DR (A) Pulse Test -0.4 -10 V -0.3 V GS = 0 -0.2 -5 V -0.1 0 -0.4 -0.8 -1.2 -1.6 -2.0 Source to Drain Voltage V SD (V) |
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