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| 2SJ452 Silicon P Channel MOS FET Application Low frequency power switching MPAK 3 Features * * * * Low on-resistance. Low drive power 2.5V gate drive device. Small package (MPAK). D 3 1 2 2 G 1. Source 2. Gate 3. Drain S 1 Table 1 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID ID(pulse)* Pch** Tch Tstg Ratings -50 20 -0.2 -0.4 150 150 -55 to +150 Unit V V A A mW C C -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- * PW 10 s, duty cycle 1 % Marking is "ZM-". 2SJ452 Table 2 Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state resistance Static drain to source on state resistance Foward transfer admittance Symbol V(BR)DSS V(BR)GSS IDSS IGSS VGS(off) RDS(on)1 RDS(on)2 |yfs| Ciss Coss Crss td(on) tr td(off) tf Min -50 Typ -- Max -- Unit V Test conditions ID = -100 A, VGS = 0 IG = 100 A, VDS = 0 VDS = -40 V, VGS = 0 VGS = 16 V, VDS = 0 ID = -10 A, VDS = -5 V -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- 20 -- -- V -------------------------------------------------------------------------------------- -- -- -0.5 -- -- -- -- 5.0 -1.0 2.0 -1.5 7.0 A A V -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- ID = -100 mA VGS = -4 V * ID = -40 mA VGS = -2.5 V * ID = -100 mA VDS = -10 V VDS = -10 V VGS = 0 f = 1 MHz VGS = -10 V, ID = -0.1 A RL = 300 -------------------------------------------------------------------------------------- -- 7.5 12.0 -------------------------------------------------------------------------------------- 0.1 0.19 -- S -------------------------------------------------------------------------------------- Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay tiem Fall time * Pulse Test -- -- -- -- -- -- -- 1.1 15.7 0.12 0.45 1.3 8.4 5.6 -- -- -- -- -- -- -- pF pF pF s s s s ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- 2SJ452 Maximum Channel Dissipation Curve 200 Pch (mW) Channel Dissipation 150 100 50 0 50 100 150 Ta (C) 200 Ambient Temperature Package Dimensions Unit : mm * MPAK 0.65 - 0.3 + 0.1 0.4 - 0.05 + 0.10 0.16 - 0.06 + 0.10 2.8 - 0.6 + 0.2 0.95 1.9 0.95 + 0.3 2.8 - 0.1 0.3 0.65 - 0.3 + 0.1 1.5 0 ~ 0.15 1.1- 0.1 + 0.2 Hitachi Code EIAJ JEDEC MPAK SC-59A -- |
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