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| 2SK1159, 2SK1160 Silicon N-Channel MOS FET Application TO-220AB High speed power switching Features * * * * * Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter and motor driver 2 1 2 3 1 1. Gate 2. Drain (Flange) 3. Source 3 Table 1 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage 2SK1159 Symbol VDSS Ratings 450 Unit V -------------------------------------------------------------------------------------- ---------- 2SK1160 Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature VGSS ID ID(pulse)* IDR Pch** Tch Tstg ------ 500 30 8 32 8 60 150 -55 to +150 V A A A W C C -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- * PW 10 s, duty cycle 1 % ** Value at TC = 25 C 2SK1159, 2SK1160 Table 2 Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage 2SK1159 Symbol V(BR)DSS Min 450 Typ -- Max -- Unit V Test conditions ID = 10 mA, VGS = 0 -------------------------------------------------------------------------------------- -------- 2SK1160 Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current 2SK1159 V(BR)GSS IGSS IDSS ---- 500 30 -- -- V IG = 100 A, VDS = 0 VGS = 25 V, VDS = 0 VDS = 360 V, VGS = 0 -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -- -- -- -- 10 250 A A -------------------------------------------------------------------------------------- -------- 2SK1160 Gate to source cutoff voltage Static Drain to source on state resistance 2SK1159 VGS(off) RDS(on) 2.0 -- -- |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr 4.5 -- -- -- -- -- -- -- -- -- 0.55 0.60 7.5 1150 340 55 17 55 100 45 0.9 3.0 0.7 0.8 -- -- -- -- -- -- -- -- -- S pF pF pF ns ns ns ns V IF = 8 A, VGS = 0 IF = 8 A, VGS = 0, diF/dt = 100 A/s ID = 4 A, VGS = 10 V, RL = 7.5 ID = 4 A, VDS = 10 V * VDS = 10 V, VGS = 0, f = 1 MHz V --------------------- VDS = 400 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 4 A, VGS = 10 V * -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------- 2SK1160 -------------------- -------------------------------------------------------------------------------------- Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode forward voltage * Pulse Test -------------------------------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -- 350 -- ns -------------------------------------------------------------------------------------- 2SK1159, 2SK1160 Power vs. Temperature Derating 60 Channel Dissipation Pch (W) 50 Maximum Safe Operation Area 10 re a 20 Drain Current ID (A) 10 5 2 1.0 0.5 0.2 0.1 0 50 100 Case Temperature TC (C) 150 0.05 1 O is per Lim at ite ion d in by th R is A (o n 10 DC PW 0 40 20 1 = m s O 10 pe m s ra (1 tio n sho (T t C= ) 25 C s s DS ) ) Ta = 25C 2SK1160 2SK1159 10 100 300 1,000 3 30 Drain to Source Voltage VDS (V) 20 Typical Output Characteristics 20 10 V 6V 5.5 V Pulse Test Drain Current ID (A) 16 Typical Transfer Characteristics -25C VDS = 20 V Pulse Test Ta = 25C 75C 16 Drain Current ID (A) 12 5.0 V 8 4.5 V 4 VGS = 4 V 0 10 30 40 20 50 Drain to Source Voltage VDS (V) 12 8 4 0 2 6 8 4 Gate to Source Voltage VGS (V) 10 2SK1159, 2SK1160 Drain to Source Saturation Voltage VDS (on) (V) Static Drain to Source on State Resistance RDS (on) () Drain to Source Saturation Voltage vs. Gate to Source Voltage 10 Pulse Test 8 10 A Static Drain to Source on State Resistance vs. Drain Current 10 5 Pulse Test VGS = 10 V 2 1.0 15 V 0.5 6 4 5A 2 ID = 2 A 0.2 0.1 0.5 0 4 12 16 8 20 Gate to Source Voltage VGS (V) 1.0 2 10 5 20 Drain Current ID (A) 50 Static Drain to Source on State Resistance RDS (on) () Static Drain to Source on State Resistance vs. Temperature VGS = 10 V Pulse Test 1.6 ID = 10 A Forward Transfer Admittance yfs (S) 2.0 50 Forward Transfer Admittance vs. Drain Current VDS = 20 V Pulse Test 20 10 5 -25C TC = 25C 75C 1.2 0.8 2, 5 A 0.4 2 1.0 0.5 0.1 0 -40 0 80 120 40 Case Temperature TC (C) 160 0.2 2 0.5 1.0 Drain Current ID (A) 5 10 2SK1159, 2SK1160 Body to Drain Diode Reverse Recovery Time 5,000 Reverse Recovery Time trr (ns) 2,000 1,000 500 200 100 di/dt = 100 A/s, Ta = 25C VGS = 0 Pulse Test 10,000 Typical Capacitance vs. Drain to Source Voltage VGS = 0 f = 1 MHz Capacitance C (pF) Ciss 1,000 Coss 100 Crss 50 0.2 0.5 1.0 2 5 10 Reverse Drain Current IDR (A) 20 10 0 20 10 30 40 Drain to Source Voltage VDS (V) 50 Dynamic Input Characteristics 500 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) VDD = 100 V 250 V 400 V VDS 300 12 20 500 Switching Characteristics VGS = 10 V, PW = 2 s, duty < 1% Switching Time t (ns) 200 td (off) 100 50 tr 20 10 5 0.2 tf td (on) 400 VGS 16 200 VDD = 400 V 250 V 100 V 8 100 ID = 8 A 4 0 0 20 60 80 40 Gate Charge Qg (nc) 100 0.5 2 1.0 5 Drain Current ID (A) 10 20 2SK1159, 2SK1160 Reverse Drain Current vs. Source to Drain Voltage 20 Reverse Drain Current IDR (A) Pulse Test 16 12 8 5, 10 V VGS = 0, -10 V 4 0 0.8 2.0 0.4 1.2 1.6 Source to Drain Voltage VSD (V) Normalized Transient Thermal Impedance S (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 TC = 25C 1.0 D=1 0.5 0.3 0.1 0.2 0.1 0.05 0.02 0.01 P hot ch-c (t) = S (t) * ch-c ch-c = 2.08C/W, TC = 25C PDM uls e 0.03 D= T 100 1m 10 m Pulse Width PW (s) 100 m PW PW T 1S 0.01 10 1 10 2SK1159, 2SK1160 Switching Time Test Circuit Vin Monitor Wavewforms 90 % Vout Monitor D.U.T RL Vin Vout 10 % 10 % 90 % tr 90 % td (off) 10 % 50 Vin = 10 V . VDD = 30 V . td (on) tf |
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