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| 2SK1772 Silicon N Channel MOS FET Application UPAK High speed power switching Features 3 Low on-resistance High speed switching Low drive current 4 V gate drive device - - - can be driven from 5 V source. * Suitable for DC - DC converter, motor drive, power switch, solenoid drive * * * * 2 1 4 2, 4 1 1. Gate 2. Drain 3. Source 4. Drain 3 Table 1 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature * ** *** Symbol VDSS VGSS ID ID(pulse)* IDR Pch** Tch Tstg Ratings 30 20 1 2 1 1 150 -55 to +150 Unit V V A A A W C C -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- PW 10 s, duty cycle 1 % When using the alumina ceramic board (12.5 x 20 x 0.7mm) Marking is "HY". 2SK1772 Table 2 Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) Min 30 Typ -- Max -- Unit V Test Conditions ID = 10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 16 V, VDS = 0 VDS = 25 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 0.5 A VGS = 10 V * ID = 0.5 A VGS = 4 V * ID = 0.5 A VDS = 10 V * VDS = 10 V VGS = 0 f = 1 MHz ID = 0.5 A VGS = 10 V RL = 60 -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- 20 -- -- V -------------------------------------------------------------------------------------- -- -- 1.0 -- -- -- -- 0.4 10 50 2.0 0.6 A A V -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- ------------------------------------------------ -- 0.6 0.85 -------------------------------------------------------------------------------------- Forward transfer admittance |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr 0.6 1.0 -- S -------------------------------------------------------------------------------------- Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time * Pulse Test -- -- -- -- -- -- -- -- 85 65 20 10 15 40 30 1.2 -- -- -- -- -- -- -- -- pF pF pF ns ns ns ns V IF = 1 A, VGS = 0 IF = 1 A, VGS = 0, diF/dt = 50 A/s ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -- 30 -- ns -------------------------------------------------------------------------------------- 2SK1772 Power vs. Temparature Derating 1.6 Maximum Safe Operation Area 10 I D (A) 3 1 D C Operation in this area is limited by R DS(on) Pch (W) PW = 100 s PW O pe ra PW = 1.2 Channel Dissipation Drain Current = 1 0.8 0.3 0.1 10 m s m s tio n 0.4 0.03 0 50 100 150 Ta (C) 200 Ambient Temperature 0.01 0.1 Ta = 25C 0.3 1 3 10 30 100 Drain to Source Voltage V DS (V) Typical Output Characteristics 2.0 10 V I D (A) 1.6 5V Pulse test 3.0 V Drain Current I D (A) 4V 3.5 V 1.0 Typical Transfer Characteristics VDS = 10 V Pulse test 0.8 1.2 0.6 75C 0.4 Tc = 25C -25C Drain Current 0.8 2.5 V 0.4 VGS = 2 V 0 1 2 3 Drain to Source Voltage 4 5 V DS (V) 0.2 0 1 2 3 Gate to Source Voltage 4 5 V GS (V) 2SK1772 Drain to Source Saturation Voltage V DS(on) (V) 2.0 Pulse test Static Drain to Source on State Resistance R DS(on) ( ) Drain to Source Saturation Voltage vs. Gate to Source Voltage Static Drain to Source on State Resistance vs. Drain Current Pulse test 5 10 1.6 1.2 2A 1A I D = 0.5 A 0 2 4 6 Gate to Source Voltage 8 V GS (V) 10 2 1 VGS = 4 V 10 V 0.8 0.5 0.4 0.2 0.1 0.05 0.1 0.2 0.5 1 2 Drain Current I D (A) 5 Static Drain to Source on State Resistance R DS(on) ( ) 2.0 Pulse test Forward Transfer Admittance |y fs | (S) Static Drain to Source on State Resistance vs. Temperature Forward Transfer Admittance vs. Drain Current 5.0 2.0 Tc = 25C 1.0 0.5 75C -25C 1.6 1.2 2A VGS = 4 V 1A 0.5 A 2A VGS = 10 V I D = 0.5 A, 1 A 160 0.8 0.2 0.1 V DS = 10 V Pulse test 0.05 0.1 0.2 0.5 1.0 Drain Current I D (A) 2.0 0.4 0 -40 0 40 80 120 Case Temperature Tc (C) 0.05 0.02 2SK1772 Body-Drain Diode Reverse Recovery Time 500 Reverse Recovery Time t rr (ns) di/dt = 50 A/s VGS = 0 200 Ta = 25C 100 50 1000 Typical Capacitance vs. Drain to Source Voltage (pF) Capacitance C 100 Ciss Coss Crss 20 10 5 0.02 0.05 0.1 0.2 0.5 1.0 2.0 Reverse Drain Current I DR (A) 10 VGS = 0 f = 1 MHz 10 20 30 Drain to Source Voltage 40 50 V DS (V) 1 0 Dynamic Input Characteristics 50 V DS (V) ID = 1 A VGS VDD = 5 V 10 V 20 V VDS 16 20 Gate to Source Voltage V GS (V) Switching Characteristics 500 200 100 50 tf td(off) VGS = 10 V VDD = 30 V PW = 2 s duty 1 % Drain to Source Voltage 30 12 20 8 Switching Time t (ns) 40 20 tr 10 5 0.02 td(on) 10 0 VDD = 5 V 10V 20 V 0.8 1.6 2.4 Gate Charge Qg 4 0 4.0 3.2 (nc) 0.05 0.1 0.2 0.5 1.0 Drain Current I D (A) 2.0 2SK1772 Reverse Drain Current vs. Source to Drain Voltage 2.0 I DR (A) Pulse test VGS = 10 V 1.6 Reverse Drain Current 1.2 0.8 0, -5 V 0.4 0 0.4 0.8 1.2 Source to Drain Voltage 1.6 2.0 V SD (V) |
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