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| 2SK2980 Silicon N Channel MOS FET High Speed Power Switching ADE-208-571B (Z) 3rd. Edition Jun 1998 Features * Low on-resistance R DS(on) = 0. 2 typ. (VGS = 4 V, I D = 500 mA) * 2.5V gate drive devices. * Small package (MPAK) Outline MPAK 3 1 D 2 G 1. Source 2. Gate 3. Drain S 2SK2980 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Symbol VDSS VGSS Ratings 30 +12 -10 Drain current Drain peak current Channel dissipation Channel temperature Storage temperature Note: ID I D(pulse) Pch Tch Tstg Note1 Note2 Unit V V V A A C C 1.0 4 0.8 150 -55 to +150 1. PW 10s, duty cycle 1 % 2. Value at when using alumina ceramic board (12.5 x 20 x 0.7 mm) 2 2SK2980 Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Zero gate voltage drain current Gate to source leak current I DSS I GSS Symbol V(BR)DSS V(BR)GSS Min 30 +12 -10 -- -- 0.5 -- Typ -- -- -- -- -- -- 0.2 Max -- -- -- 1.0 5.0 1.5 0.28 Unit V V V A A V S Test Conditions I D = 100A, VGS = 0 I G = +100A, VDS = 0 I G = -100A, VDS = 0 VDS = 30 V, VGS = 0 VGS = 8V, VDS = 0 I D = 10A, VDS = 5V I D = 500 A VGS = 4V Note3 -- 0.3 0.5 I D = 500 A VGS = 2.5V Note3 1.2 2.0 -- I D = 500 A VDS = 10V Note3 Input capacitance Output capacitance Ciss Coss -- -- -- -- -- -- -- 155 75 35 12 30 35 30 -- -- -- -- -- -- -- pF pF pF ns ns ns ns VDS = 10V VGS = 0 f = 1MHz VGS = 4V, ID = 500 A RL = 20 Gate to source cutoff voltage VGS(off) Static drain to source on state RDS(on) resistance Static drain to source on state RDS(on) resistance Forward transfer admittance |yfs| Reverse transfer capacitance Crss Turn-on delay time Rise time Turn-off delay time Fall time Note: 3. Pulse test 4. Marking is "ZZ- " t d(on) tr t d(off) tf 3 2SK2980 Main Characteristics Power vs. Temperature Derating 1.6 Pch (W) I D (A) Test condition : When using alumina ceramic board (12.5 x 20 x 0.7 mm) 1.2 100 30 10 3 Maximum Safe Operation Area 10 s 100 s Channel Dissipation Drain Current 0.8 0.4 0 50 100 150 200 Ambient Temperature Ta (C) m s = 10 (1 DC 0.3 sh ms Op ot ) er 0.1 Operation in at this area is ion limited by R DS(on) 0.03 Ta = 25 C 0.01 100 3 0.1 0.3 1 10 30 Drain to Source Voltage V DS (V) 1 PW 1 Typical Output Characteristics 1.0 4V 2.5 V I D (A) 0.8 Pulse Test 2V I D (A) 0.8 1.0 Typical Transfer Characteristics 25C 75C Tc = -25C 0.6 1.8 V 0.6 Drain Current 0.4 Drain Current 0.4 0.2 VGS = 1.5 V 0 2 4 6 Drain to Source Voltage 8 10 V DS (V) 0.2 V DS = 10 V Pulse Test 0 1 2 3 Gate to Source Voltage 4 5 V GS (V) 4 2SK2980 Drain to Source Saturation Voltage vs. Gate to Source Voltage Static Drain to Source on State Resistance vs. Drain Current 2 Pulse Test 1 0.5 VGS = 2.5 V 0.2 0.1 Drain to Source Saturation Voltage V DS(on) (V) Pulse Test 0.4 0.3 0.2 ID=1A 0.5 A 0.2 A Drain to Source On State Resistance R DS(on) ( ) 0.5 4V 0.1 0 6 2 4 Gate to Source Voltage 8 V GS (V) 10 0.05 0.1 0.2 0.5 1 2 Drain Current I D (A) 5 Static Drain to Source on State Resistance R DS(on) ( ) I D = 0.1 A, 0.2 A, 0.5 A 0.4 VGS = 2.5 V 0.3 Forward Transfer Admittance |y fs | (S) Static Drain to Source on State Resistance vs. Temperature 0.5 Forward Transfer Admittance vs. Drain Current 5 2 1 0.5 75 C 0.2 0.1 0.05 0.01 0.02 V DS = 10 V Pulse Test 0.05 0.1 0.2 0.5 Drain Current I D (A) 1 Tc = -25 C 25 C 0.2 4V 0.1 0 -40 0.1 A, 0.2 A, 0.5 A Pulse Test 0 40 80 120 160 Case Temperature Tc (C) 5 2SK2980 Typical Capacitance vs. Drain to Source Voltage 500 VGS = 0 f = 1 MHz Coss Ciss Crss Dynamic Input Characteristics Capacitance C (pF) V DS (V) 40 16 200 100 50 20 10 5 0 10 20 Drain to Source Voltage 30 V DS V GS 10 V DD = 5 V 10 V 20 V 12 20 8 V DD = 20 V 10 V 5V 2 4 6 8 Qg (nc) Gate Charge 4 0 10 30 40 50 0 Drain to Source Voltage V DS (V) Switching Characteristics 200 100 tr 1.0 Reverse Drain Current vs. Source to Drain Voltage Reverse Drain Current I DR (A) Switching Time t (ns) 50 20 10 5 2 1 0.1 t d(off) tf t d(on) 0.8 0.6 5V V GS = 0 0.4 V GS = 4 V, V DD = 10 V PW = 2 s, duty < 1 % 0.2 0.5 1 Drain Current 2 5 I D (A) 10 0.2 Pulse Test 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage V SD (V) 6 Gate to Source Voltage V GS (V) 1000 50 ID=1A 20 2SK2980 Switching Time Test Circuit Vin Monitor D.U.T. RL Vin Vin 4V 50 V DD = 10 V Vout 10% 10% 90% td(on) tr 90% td(off) tf 10% Vout Monitor Waveform 90% 7 2SK2980 Package Dimensions Unit: mm 0.65 - 0.3 + 0.1 0.4 - 0.05 + 0.10 0.16 - 0.06 + 0.10 2.8 - 0.6 + 0.2 0.95 1.9 0.95 + 0.3 2.8 - 0.1 0.3 0.65 - 0.3 + 0.1 1.5 0 ~ 0.15 1.1- 0.1 + 0.2 MPAK Hitachi Code SC-59A EIAJ TO-236Mod. JEDEC 8 2SK2980 Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & IC Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 For further information write to: Hitachi Semiconductor (America) Inc. 2000 Sierra Point Parkway Brisbane, CA. 94005-1897 USA Tel: 800-285-1601 Fax:303-297-0447 Hitachi Europe GmbH Continental Europe Dornacher Strae 3 D-85622 Feldkirchen Munchen Tel: 089-9 91 80-0 Fax: 089-9 29 30-00 Hitachi Asia (Hong Kong) Ltd. Hitachi Asia Pte. Ltd. Hitachi Europe Ltd. 16 Collyer Quay #20-00 Unit 706, North Tower, Electronic Components Div. World Finance Centre, Northern Europe Headquarters Hitachi Tower Harbour City, Canton Road Singapore 049318 Whitebrook Park Tsim Sha Tsui, Kowloon Tel: 535-2100 Lower Cookham Road Hong Kong Fax: 535-1533 Maidenhead Tel: 27359218 Berkshire SL6 8YA Fax: 27306071 United Kingdom Tel: 01628-585000 Fax: 01628-585160 Copyright (c) Hitachi, Ltd., 1998. All rights reserved. Printed in Japan. 9 |
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