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Silicon MOSFETs (Small Signal)
2SK3539
Silicon N-channel MOSFET
Unit: mm
(0.425)
For switching I Features
* High-speed switching * Wide frequency band * Gate-peotection diode built-in
0.3+0.1 -0.0 3
0.15+0.10 -0.05
1.250.10
2.10.1 5
1
2
0.20.1 0.90.1 0.9+0.2 -0.1
(0.65) (0.65) 1.30.1
I Absolute Maximum Ratings Ta = 25C
Parameter Drain to source voltage Gate to source voltage Drain current Max drain current Allowable power dissipation Channel temperature Storage temperature Symbol VDS VGSO ID IDP PD Tch Tstg Rating 50 7 100 200 150 150 -55 to +150 Unit V V mA mA mW C C
10
2.00.2
1: Gate 2: Source 3: Drain SMini3-G1 Package
Marking Symbol: 5F
I Electrical Characteristics Ta = 25C
Parameter Drain to source voltage Drain current Gate cutoff current Gate threshold voltage Drain resistance (ON) Symbol VDSS IDSS IGSS Vth RDS(on) Yfs Ciss Coss Crss ton toff Conditions ID = 10 A, VGS = 0 VDS = 50 V, VGS = 0 VGS = 7 V, VDS = 0 ID = 1.0 A, VDS = 3 V ID = 10 mA, VGS = 2.5 V ID = 10 mA, VGS = 4.0 V Forward trancfer admitance Small-signal short-circuit input capacitance Small-signal short-circuit output capacitance Small-signal reverse transfer capacitance Turn-on time * Turn-off time
*
Min 50
0 to 0.1
Typ
Max
Unit V A A V mS pF pF pF ns ns
1.0 5.0 0.9 1.2 8 6 20 60 12 7 3 200 200 1.5 15 12
ID = 10 mA, VDS = 3 V, f = 1 kHz VDS = 3 V, VGS = 0, f = 1 MHz VDS = 3 V, VGS = 0, f = 1 MHz VDS = 3 V, VGS = 0, f = 1 MHz VDD = 3 V, VGS = 0 V to 3 V, RL = 470 VDD = 3 V, VGS = 3 V to 0 V, RL = 470
Note) *: See test circuit
VOUT
470 VIN VDD = 3 V VOUT 10%
90%
100 F
VGS = 3.0 V 50
10% 90% ton toff
Publication date: April 2002
SJF00035AED
1
2SK3539
PD Ta
160
70 VGS = 2.0 V 60
ID VDS
Ta = 25C
ID VGS
250 VDS = 3 V 200 Ta = -25C 25C 150 75C
Allowable power dissipation PD (mW)
140 120 100 80 60 40 20 0 0 20 40 60 80 100 120 140 160
Drain current ID (mA)
50 40 30 20 10 0 0 2 4 6 8
1.8 V
1.7 V 1.6 V 1.5 V
Drain current ID (mA)
1.9 V
100
50
0
10
0
0.5
1.0
1.5
2.0
2.5
3.0
Ambient temperature Ta (C)
Drain to source voltage VDS (V)
Gate to source voltage VGS (V)
Yfs VGS
0.18
RDS(on) VGS
60 ID = 10 mA
10.0
VIN IO
VO = 5 V TC = 25C
Forward trancfer admitance Yfs (mS)
0.16 0.14 0.12 0.10 0.08 0.06 0.04 0.02
Drain resistance (ON) RDS(on) ()
VDS = 3 V f = 1 MHz Ta = 25C
50
40
Collector voltage VIN (V)
30
1.0
20 25C Ta = 75C 10 -25C
0 0 0.5 1.0 1.5 2.0 2.5 3.0
0 0 1 2 3 4 5 6
0.1
1
10
100
1 000
Gate to source voltage VGS (V)
Gate to source voltage VGS (V)
Output current IO (mA)
2
SJF00035AED
Request for your special attention and precautions in using the technical information and semiconductors described in this book
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this book and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this book is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this book. (4) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (5) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.
2002 MAY

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