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| (R) P01xxxA/B SENSITIVE GATE SCR FEATURES IT(RMS) = 0.8A VDRM = 100V to 400V Low IGT < 1A max to < 200A K G A A G K DESCRIPTION The P01xxxA/B series of SCRs uses a high performance planar PNPN technology. These parts are intended for general purpose applications where low gate sensitivity is required. ABSOLUTE RATINGS (limiting values) Symbol IT(RMS) IT(AV) ITSM Parameter RMS on-state current (180 conduction angle) Mean on-state current (180 conduction angle) Non repetitive surge peak on-state current (Tj initial = 25C ) I2t Value for fusing Critical rate of rise of on-state current IG = 10 mA diG /dt = 0.1 A/s. Storage and operating junction temperature range Maximum lead temperature for soldering during 10s at 2mm from case Tl= 55C Tl= 55C tp = 8.3 ms tp = 10 ms tp = 10 ms Value 0.8 0.5 8 7 0.24 30 - 40, + 150 - 40, + 125 260 A2s A/s C C Unit A A A TO92 (Plastic) P01xxxA RD26 (Plastic) P01xxxB I2t dI/dt Tstg Tj Tl Symbol VDRM VRRM January 1995 Parameter A Repetitive peak off-state voltage Tj = 125C RGK = 1K 100 Voltage B 200 C 300 D 400 Unit V 1/5 P01xxxA/B THERMAL RESISTANCES Symbol Rth(j-a) Rth(j-l) Junction to ambient Junction to leads for DC Parameter Value 150 80 Unit C/W C/W GATE CHARACTERISTICS (maximum values) PG (AV)= 0.1 W PGM = 2 W (tp = 20 s) ELECTRICAL CHARACTERISTICS Symbol IGT Test Conditions 02 VD=12V (DC) RL=140 Tj= 25C MIN MAX VGT VGD VRGM tgd IH IL VTM IDRM IRRM dV/dt tq VD=12V (DC) RL=140 VD=VDRM RL=3.3k RGK = 1 K IRG =10A VD=VDRM ITM= 3 x IT(AV) dIG/dt = 0.1A/s IG = 10mA IT= 50mA RGK = 1 K IG=1mA RGK = 1 K ITM= 1.6A tp= 380s VD = VDRM RGK = 1 K VR = VRRM VD=67%VDRM RGK = 1 K ITM= 3 x IT(AV) VR =35V dI/dt=10A/s tp=100s dV/dt=10V/s VD= 67%VDRM RGK = 1 K Tj= 25C Tj= 125C Tj= 25C Tj= 25C Tj= 25C Tj= 25C Tj= 25C Tj= 25C Tj= 125C Tj= 125C Tj= 125C MAX MIN MIN TYP MAX MAX MAX MAX MAX MIN MAX 25 25 200 1 Sensitivity 09 11 4 25 0.8 0.1 8 0.5 5 6 1.93 1 100 50 200 100 30 15 15 50 18 0.5 5 V V V s mA mA V A A V/s s A Unit IGM = 1 A (tp = 20 s) ORDERING INFORMATION P SCR PLANAR CURRENT 2/5 01 02 SENSITIVITY A A PACKAGES : A = TO92 B = RD26 VOLTAGE (R) P01xxxA/B Fig.1 : Maximum average power dissipation versus average on-state current. Fig.2 : Correlation between maximum average power dissipation and maximum allowable temperature (Tamb and Tlead). P (W) P (W) Tlead (oC) 1 360 O 1 0.8 DC Rth(j-a ) o -45 Rth(j-l) 0.8 0.6 = 120 = 180 o -65 0.6 -85 0.4 0.2 -105 Tamb ( C) o 0.4 = 60 o = 90 o 0.2 = 30 o I T(AV)(A) 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0 0 20 40 60 80 100 120 -125 140 Fig.3 : Average on-state current versus lead temperature. I T(AV) (A) Fig.4 : Relative variation of thermal impedance junction to ambient versus pulse duration. Zth(j-a)/Rth(j-a) 1.00 1 0.8 0.6 DC 0.10 0.4 0.2 = 180 o Tlead ( C) o tp (s) 0 0 10 20 30 40 50 60 70 80 90 100 110 120 130 0.01 1E-3 1E-2 1E-1 1 E+0 1 E+1 1E +2 5 E+2 Fig.5 : Relative variation of gate trigger current and holding current versus junction temperature. Igt[Tj] o Igt[Tj=25 C] Ih[Tj] o Ih[Tj=25 C] Fig.6 : Non repetitive surge peak on-state current versus number of cycles. ITSM(A) 8 7 6 5 Tj initial = 25 C o 10.0 9.0 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0.0 -40 -20 Ih Igt 4 3 2 1 Tj(oC) Number of cycles 20 40 60 80 100 120 140 0 0 1 10 100 1,000 3/5 (R) P01xxxA/B Fig.7 : Non repetitive surge peak on-state current for a sinusoidal pulse with width : tp 10ms, and corresponding value of I2t. I TSM (A). I2 t (A 2 s) Fig.8 : On-state characteristics (maximum values). 100 10 Tj initial = 25o C I TM (A) Tj initial o 25 C I TSM 10 1 1 I2 t Tj max Tj max Vto =0.95 V Rt =0.600 0.1 1 tp(ms) VTM (V) 10 0.1 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 Fig.9 : Relative variation of holding current versus gate-cathode resistance (typical values). Ih(Rgk) Ih(Rgk=1k ) Tj=25 o C 5.0 1.0 0.1 Rgk( ) 1 .0 E+0 0 1. 0E+01 1.0 E+ 02 1. 0E+ 03 1 .0 E+0 4 1. 0E+05 1. 0E+ 06 4/5 (R) P01xxxA/B PACKAGE MECHANICAL DATA TO92 (Plastic) DIMENSIONS REF. A a B C Millimeters Typ. Min. Max. Typ. 0.053 4.7 2.54 4.4 12.7 3.7 0.45 4.8 0.100 1.35 Inches Min. Max. 0.185 0.173 0.189 0.500 0.146 0.017 A B C F D E D E F a Marking : type number Weight : 0.2 g PACKAGE MECHANICAL DATA RD26 (Plastic) DIMENSIONS REF. A C B 45 Millimeters Typ. 2.54 1.35 4.4 12.7 4.7 3.0 0.45 4.8 Inches G a A B C D E F G a Min. Max. Typ. Min. Max. 0.100 3.7 0.053 0.173 0.189 0.500 0.185 0.118 0.177 0.146 F D E Marking : type number Weight : 0.2 g Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THO MSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. (c) 1995 SGS-THOMSON Microelectronics - All rights reserved. SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. 5/5 (R) |
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